Temperature scaling concept of MOSFET p. C6-3 K. Masu and K. Tsubouchi DOI: https://doi.org/10.1051/jp4:1994601 PDF (511.7 KB)
Performances and physical mechanisms in sub-0.1 µm gate length LDD MOSFETs at low temperature p. C6-13 F. Balestra, H. Nakabayashi, M. Tsuno, T. Matsumoto and M. Koyanagi DOI: https://doi.org/10.1051/jp4:1994602 PDF (321.1 KB)
Study of saturation velocity overshoot in deep submicron silicon MOSFETS from liquid helium up to room temperature p. C6-19 K. Rais, G. Ghibaudo, F. Balestra and M. Dutoit DOI: https://doi.org/10.1051/jp4:1994603 PDF (168.1 KB)
On the determination of the effective channel length of MOSFETS p. C6-25 N. Patel, M. Garcia, S. Titcomb and R. Anderson DOI: https://doi.org/10.1051/jp4:1994604 PDF (191.0 KB)
Series resistance effects in submicron MOS transistors operated from 300 K down to 4.2 K p. C6-31 E.A. Gutiérrez-D, L. Deferm and G. Declerck DOI: https://doi.org/10.1051/jp4:1994605 PDF (268.2 KB)
Hot-carrier degradation of CMOS inverters and ring oscillators at 77K p. C6-37 J.-T. Hsu, X. Li, P. Aum, D. Chan and C.R. Viswanathan DOI: https://doi.org/10.1051/jp4:1994606 PDF (175.4 KB)
Low temperature low frequency noise in oxide and reoxidized-nitrided oxide films p. C6-43 R. Divakaruni, R. Peterson, S. Nystrom and C.R. Viswanathan DOI: https://doi.org/10.1051/jp4:1994607 PDF (244.1 KB)
DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures p. C6-51 E. Simoen and C. Claeys DOI: https://doi.org/10.1051/jp4:1994608 PDF (585.3 KB)
Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature p. C6-57 J. Jomaah, G. Ghibaudo and F. Balestra DOI: https://doi.org/10.1051/jp4:1994609 PDF (194.8 KB)
Low temperature operation of silicon-on-insulator inverters p. C6-63 E. Simoen and C. Claeys DOI: https://doi.org/10.1051/jp4:1994610 PDF (208.5 KB)
High mobility Si1-xGex PMOS transistors to 5K p. C6-69 J.A. Scott, E.T. Croke and J.D. Plummer DOI: https://doi.org/10.1051/jp4:1994611 PDF (742.4 KB)
Hot carrier effects in sub-0.1 µm gate length MOSFETs between room and liquid helium temperatures p. C6-75 F. Balestra, M. Tsuno, T. Matsumoto, H. Nakabayashi and M. Koyanagi DOI: https://doi.org/10.1051/jp4:1994612 PDF (312.7 KB)
Low temperature CMOS-compatible JFET's p. C6-81 J. Vollrath DOI: https://doi.org/10.1051/jp4:1994613 PDF (203 KB)
Si vertical JFET at low temperatures ; I-V characteristics and low frequency noise p. C6-87 J.A. Chroboczek, A. Granier, R. Plana and J. Graffeuil DOI: https://doi.org/10.1051/jp4:1994614 PDF (180.8 KB)
Room and low temperature electrical measurements for the interface characterization of titanium disilicides on silicon from multilayer titanium/silicon structures p. C6-93 P. Revva, A.G. Nassiopoulos and A. Travlos DOI: https://doi.org/10.1051/jp4:1994615 PDF (215.9 KB)
Operation of SiGe bipolar technology at cryogenic temperatures p. C6-101 J.D. Cressler DOI: https://doi.org/10.1051/jp4:1994616 PDF (549.1 KB)
Low temperature performance of self-aligned "Etched Polysilicon" emitter pseudo-heterojunction bipolar transistors p. C6-111 G. Giroult-Matlakowski, H. Bousseta, B. Le Tron, D. Dutartre, P. Warren, M.J. Bouzid, A. Nouailhat, P. Ashburn and A. Chantre DOI: https://doi.org/10.1051/jp4:1994617 PDF (663.7 KB)
High-injection barrier effects in SiGe HBTs operating at cryogenic temperatures p. C6-117 J.D. Cressler, D.M. Richey, R.C. Jaeger, E.F. Crabbé, J.H. Comfort and J.M.C. Stork DOI: https://doi.org/10.1051/jp4:1994618 PDF (327.3 KB)
Measurement of the bandgap narrowing in the base of Si homojunction and Si/Si1-xGex heterojunction bipolar transistors from the temperature dependence of the collector current p. C6-123 P. Ashburn, A. Nouailhat and A. Chantre DOI: https://doi.org/10.1051/jp4:1994619 PDF (164.3 KB)
Numerical simulation of SiGe HBT's at cryogenic temperatures p. C6-127 D.M. Richey, J.D. Cressler and R.C. Jaeger DOI: https://doi.org/10.1051/jp4:1994620 PDF (246.6 KB)
Modelling heavy doping effects for low temperature device simulations p. C6-133 S. Sokolic and S. Amon DOI: https://doi.org/10.1051/jp4:1994621 PDF (271.0 KB)
Tunable infrared photoemission sensor on silicon using SiGe/Si and silicide/Si epitaxial layers p. C6-139 I. Sagnes, C. Renard and P.A. Badoz DOI: https://doi.org/10.1051/jp4:1994622 PDF (327.0 KB)
GaAs JFETs intended for deep cryogenic VLWIR readout electronics p. C6-147 T.J. Cunningham and E.R. Fossum DOI: https://doi.org/10.1051/jp4:1994623 PDF (219.3 KB)
Low temperature low voltage operation of HEMTs on InP p. C6-153 A. Sylvestre, P. Crozat, R. Adde, A. De Lustrac and Y. Jin DOI: https://doi.org/10.1051/jp4:1994624 PDF (256.5 KB)
GaAs MESFETs and monolithic circuits in cryogenic environments p. C6-159 D.V. Camin, G. Pessina and E. Previtali DOI: https://doi.org/10.1051/jp4:1994625 PDF (666.2 KB)
Collapse and large signal modelling of GaAs field effect transistors at 77 K p. C6-165 J. Verdier, O. Llopis, J.M. Dienot, R. Plana, Ph. Andre and J. Graffeuil DOI: https://doi.org/10.1051/jp4:1994626 PDF (249.8 KB)
High electric field transport effects on low temperature operation of pseudomorphic HEMTs p. C6-171 F. Aniel, P. Crozat, A. De Lustrac, R. Adde and Y. Jin DOI: https://doi.org/10.1051/jp4:1994627 PDF (299.3 KB)
Recent developments in low temperature infrared detectors p. C6-177 Ch. Lucas, D. Amingual and J.P. Chatard DOI: https://doi.org/10.1051/jp4:1994628 PDF (277.0 KB)
High Tc superconductive thin films on semiconductor substrates p. C6-185 P. Lecoeur, B. Blanc-Guillon, H. Murray and B. Mercey DOI: https://doi.org/10.1051/jp4:1994629 PDF (130.8 KB)
A 12 GHz oscillator based on a GaAs HEMT integrated to a HTS resonator p. C6-189 G. Borghs, J. DeBoeck, I. Francois, D. Chambonnet, C. Belouet, Y. Crosnier, J.C. Carru, D. Chauvel, L. Arnaud, H. Boucher et al. (4 more) DOI: https://doi.org/10.1051/jp4:1994630 PDF (771.6 KB)
Several alternative approaches to the manufacturing of HTS Josephson junctions p. C6-197 J.C. Villegier, H. Boucher, A. Ghis, M. Levis, L. Mechin, H. Moriceau, F. Pourtier, M. Vabre, S. Nicoletti and L. Correra DOI: https://doi.org/10.1051/jp4:1994631 PDF (36.00 KB)
Measurement of the I-V characteristics of superconducting dipoles : automatic compensation of low frequency drift p. C6-199 E. Lesquey, F. Gire, C. Dolabdjian, M.L.Chok Sing and R. Robbes DOI: https://doi.org/10.1051/jp4:1994632 PDF (206.2 KB)
Biepitaxial Josephson junctions and SuFET technology for the preparation of HTS-JoFETs p. C6-205 K. Petersen, A. Walkenhorst, C. Stölzel, W. Wilkens, C. Krimmer, J. Söllner, H.W. Grueninger, R. Fischer, M. Schmitt, T. Becherer and H. Adrian DOI: https://doi.org/10.1051/jp4:1994633 PDF (282.5 KB)
Penetration depth extraction in high temperature superconducting microwave transmission lines p. C6-211 D. Ladret, B. Cabon, J. Chilo, P. Xavier, J. Richard and O. Buisson DOI: https://doi.org/10.1051/jp4:1994634 PDF (464.4 KB)
High-Tc-based Josephson-junctions and SQUIDs by mechanically induced growth disorder p. C6-217 M. Schmitt, A. Hadish, P. Wagner, Th. Becherer and H. Adrian DOI: https://doi.org/10.1051/jp4:1994635 PDF (341.3 KB)
Preparation of small-area Al/AlOx/Al tunnel junctions in a self-aligned in-line technology and observation of the Coulomb blockade p. C6-223 M. Götz, P. Thieme, K. Blüthner, W. Krech, D. Born, S. Götz, H.-J. Fuchs, E.-B. Kley, Th. Wagner and G. Eska DOI: https://doi.org/10.1051/jp4:1994636 PDF (272.6 KB)
Physics of the long range proximity effect p. C6-229 I.A. Devyatov and M. Yu. Kupriyanov DOI: https://doi.org/10.1051/jp4:1994637 PDF (267.2 KB)
New elements for analysis of series arrays of superconducting junctions for submillimeter heterodyne detection p. C6-237 P. Febvre, B. Leridon, R. Maoli, S. George, P. Feautrier, G. Ruffié, W.R. McGrath and G. Beaudin DOI: https://doi.org/10.1051/jp4:1994638 PDF (362.2 KB)
Josephson voltage standard microwave circuit driven at 10 GHz p. C6-243 H.-G. Meyer, H.-J. Köhler, G. Wende, A. Chwala, E. Vollmer, U. Stumper, K. Blüthner and P. Weber DOI: https://doi.org/10.1051/jp4:1994639 PDF (200.2 KB)
Composite bolometer based on high temperature superconducting Bi2Sr2CaCu2O8+x crystals for application in the far infrared p. C6-249 M. Epifani, P. Mancino, G. Balestrino, M. Marinelli, E. Milani, M. Montuori, A. Ruosi and R. Vaglio DOI: https://doi.org/10.1051/jp4:1994640 PDF (228.7 KB)
Magnetometers based on (double) relaxation oscillation SQUIDs p. C6-255 M.J. van Duuren, Y.H. Lee, D. J. Adelerhof, J. Flokstra and H. Rogalla DOI: https://doi.org/10.1051/jp4:1994641 PDF (323.9 KB)
Processing of DC SQUIDs for radiofrequency amplification p. C6-261 R. Chicault, M.C. Cyrille, Y. Berthier, J.C. Villégier, F. Pourtier, H. Moriceau and S. Nicoletti DOI: https://doi.org/10.1051/jp4:1994642 PDF (572.7 KB)
A 350 to 700 GHz open structure SIS receiver for submm. radioastronomy p. C6-267 H. Rothermel, K.H. Gundlach and M. Voss DOI: https://doi.org/10.1051/jp4:1994643 PDF (706.1 KB)
Quasiparticle lifetimes and tunneling times in an SS'IS''S tunnel junction detector p. C6-273 A.A. Golubov, E. P. Houwnan, V.M. Krasnov, J. G. Gijsbertsen, J. Flokstra, H. Rogalla, J.B. le Grand and P.A.J. de Korte DOI: https://doi.org/10.1051/jp4:1994644 PDF (268.7 KB)
Modelling of fluxon dynamics in stacked Josephson tunnel junctions p. C6-279 A.V. Ustinov, A. Petraglia and N.F. Pedersen DOI: https://doi.org/10.1051/jp4:1994645 PDF (73.46 KB)
