| Issue |
J. Phys. IV France
Volume 04, Number C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-69 - C6-74 | |
| DOI | https://doi.org/10.1051/jp4:1994611 | |
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-69-C6-74
DOI: 10.1051/jp4:1994611
1 Stanford University, Center for Integrated Systems, Stanford, California, 94305 U.S.A.
2 Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, California, 90265 U.S.A.
© EDP Sciences 1994
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-69-C6-74
DOI: 10.1051/jp4:1994611
High mobility Si1-xGex PMOS transistors to 5K
J.A. Scott1, E.T. Croke2 and J.D. Plummer11 Stanford University, Center for Integrated Systems, Stanford, California, 94305 U.S.A.
2 Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, California, 90265 U.S.A.
Abstract
P-channel Si1-xGex MOSFETs with peak Ge content x = 0.3, 0.4, and 0.5 have been fabricated via MBE and experimentally characterized from room temperature down to 5K. Mobility enhancements relative to identically processed Si controls were largest at the lowest temperatures. The highest mobility measured, µFE = 1622 cm2/V for the x = 0.3 SiGe device, was approximately a factor of four higher than the mobility of the Si control devices. Peak mobility decreased as the fraction of Ge in the SiGe channel layer increased for the range of concentrations studied here.
© EDP Sciences 1994