WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics

J. Phys. IV France 04 (1994) C6-189-C6-194
DOI: 10.1051/jp4:1994630

A 12 GHz oscillator based on a GaAs HEMT integrated to a HTS resonator

G. Borghs¹, J. DeBoeck¹, I. Francois¹, D. Chambonnet², C. Belouet², Y. Crosnier³, J.C. Carru³, D. Chauvel³, L. Arnaud⁴, H. Boucher⁴, J.C. Villegier⁴, S. Nicoletti⁵, L. Correra⁵ and J. Jiménez<sup>6

1</sup>  Interuniversitary Micro-Electronics Center, Leuven, Belgium
²  Alcatel Alsthom Recherche, Marcoussis, France
³  Université de Lille, Lille, France
⁴  LETI-CEA/Technologies Avancées, Grenoble, France
⁵  Instituto CNR Lamel, Bologne, Italy
⁶  Departmento de Fisica de la materia Condensada, Valladolid, Spain

Abstract
A hybrid oscillator operating at 12 GHz and 77 K was designed and characterised. The design incorporated on a single substrate a passive superconductive circuit and a III-V active device. YBaCuO films (300nm), grown on MgO, had a surface resistance at 77 K of 0.3 mΩ scaled to 12 GHz. The DC and RF characteristics of the pseudomorphic HEMT showed minor differences before and after hybridation. The characterisation of a preliminary prototype oscillator including a superconducting resonator patterned on a MgO substrate, a gold matching network fabricated on Al₂O₃ and a transistor wire bonded gave a phase noise as low as - 75 dBc/Hz at 10 KHz.

© EDP Sciences 1994