| Numéro |
J. Phys. IV France
Volume 04, Numéro C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-57 - C6-62 | |
| DOI | https://doi.org/10.1051/jp4:1994609 | |
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-57-C6-62
DOI: 10.1051/jp4:1994609
Laboratoire de Physique des Composants à Semiconducteurs, URA du CNRS, ENSERG/INPG, BP. 257, 38016 Grenoble, France
© EDP Sciences 1994
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-57-C6-62
DOI: 10.1051/jp4:1994609
Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature
J. Jomaah, G. Ghibaudo and F. BalestraLaboratoire de Physique des Composants à Semiconducteurs, URA du CNRS, ENSERG/INPG, BP. 257, 38016 Grenoble, France
Abstract
Self-heating phenomena are studied from room down to near liquid helium temperatures in fully depleted N channel thin film SIMOX MOS devices. A simple theoretical analysis of the self-heating effect is worked out. A method for the extraction of the thermal resistance and the device temperature rise directly from the static output characteristics is derived. Also direct self heating transient measurements are conducted in order to confirm our analysis.
© EDP Sciences 1994