| Issue |
J. Phys. IV France
Volume 04, Number C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-153 - C6-158 | |
| DOI | https://doi.org/10.1051/jp4:1994624 | |
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-153-C6-158
DOI: 10.1051/jp4:1994624
Low temperature low voltage operation of HEMTs on InP
A. Sylvestre1, P. Crozat1, R. Adde1, A. De Lustrac1 and Y. Jin21 IEF, URA 22 du CNRS, Bât. 220, Université Paris-Sud, 91405, Orsay, France
2 L2M/CNRS LP20, 196 rue de Ravera, 92220 Bagneux, France
Abstract
Pseudomorphic single recessed Al.48In.52As/Ga.30In.70As/AlInAs pseudomorphic HEMTs (PM-HEMT) on InP with planar doping and gatelength 0.2µm are investigated at cryogenic temperatures (50K) for their high frequency intrinsic transport properties at low drain bias voltage. Transient drain current measurements are compared with DC characteristics and show the evolution of trapping effects versus drain voltage. HF measurements show that at low temperature drain current saturates at drain voltage as low as 0.5V with nearly maximum transconductance (≈ 800mS/mm) and very high intrinsic cut-off frequency (≈ 190GHz). In these ultrashort gate HEMTs, cryogenic temperatures bring the best relative improvement of intrinsic device transport properties (≈ 60%) at very low drain voltages (0.5V).
© EDP Sciences 1994