| Issue |
J. Phys. IV France
Volume 04, Number C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-101 - C6-110 | |
| DOI | https://doi.org/10.1051/jp4:1994616 | |
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-101-C6-110
DOI: 10.1051/jp4:1994616
Operation of SiGe bipolar technology at cryogenic temperatures
J.D. CresslerAlabama Microelectronics Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Auburn University, Auburn, Alabama 36849-5201, U.S.A.
Abstract
The recent introduction of silicon-germanium (SiGe) alloys has proven exceptionally promising for achieving excellent bipolar transistor performance at cryogenic temperatures, while maintaining the cost and yield advantages traditionally associated with silicon (Si) manufacturing. In this paper we review the features of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) which make them particularly suitable for cryogenic operation. Using dc and ac experimental results, we also address the issues associated with profile optimization of SiGe HBTs for the cryogenic environment, the potential for cryogenic SiGe BiCMOS technologies, and present new results on liquid-helium temperature operation of SiGe HBTs. We conclude that SiGe HBT technology offers significant leverage for future cryogenic digital, analog and mixed-signal applications requiring the highest levels of performance.
© EDP Sciences 1994