| Numéro |
J. Phys. IV France
Volume 04, Numéro C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-75 - C6-80 | |
| DOI | https://doi.org/10.1051/jp4:1994612 | |
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-75-C6-80
DOI: 10.1051/jp4:1994612
1 Laboratoire de Physique des Composants a Semiconducteurs, URA du CNRS, Institut National Polytechnique de Grenoble, ENSERG, BP. 257, 38016 Grenoble, France
2 Research Center for Integrated Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 724, Japan
© EDP Sciences 1994
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-75-C6-80
DOI: 10.1051/jp4:1994612
Hot carrier effects in sub-0.1 µm gate length MOSFETs between room and liquid helium temperatures
F. Balestra1, M. Tsuno2, T. Matsumoto2, H. Nakabayashi2 and M. Koyanagi21 Laboratoire de Physique des Composants a Semiconducteurs, URA du CNRS, Institut National Polytechnique de Grenoble, ENSERG, BP. 257, 38016 Grenoble, France
2 Research Center for Integrated Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 724, Japan
Abstract
The variations of the substrate current and the impact ionization rate in MOS transistors are investigated as a function of channel length and temperature. It is shown that, although a significant enhancement of hot carrier effects is observed by scaling down the devices, a strong reduction of the impact ionization rate is obtained for sub-0.1 µm MOSFETs operated at liquid nitrogen temperature in the low drain voltage range. A thorough study of the electrical properties of these deep submicron devices allows us to gain insight in the physical mechanisms involved in the hot carrier transport in a wide temperature range.
© EDP Sciences 1994