| Issue |
J. Phys. IV France
Volume 04, Number C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-165 - C6-170 | |
| DOI | https://doi.org/10.1051/jp4:1994626 | |
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-165-C6-170
DOI: 10.1051/jp4:1994626
1 LAAS-CNRS, 7 av. du Colonel Roche, 31077 Toulouse, France
2 Université Paul Sabatier, 118 rte de Narbonne, 31062 Toulouse, France
© EDP Sciences 1994
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-165-C6-170
DOI: 10.1051/jp4:1994626
Collapse and large signal modelling of GaAs field effect transistors at 77 K
J. Verdier1, O. Llopis1, J.M. Dienot2, R. Plana2, Ph. Andre1 and J. Graffeuil21 LAAS-CNRS, 7 av. du Colonel Roche, 31077 Toulouse, France
2 Université Paul Sabatier, 118 rte de Narbonne, 31062 Toulouse, France
Abstract
A complete electrical characterization of different types of GaAs field effect transistors at liquid nitrogen temperature is performed. The trapping-detrapping mechanisms on deep levels are particularly adressed and a method is proposed to circumvent the collapse phenomenon which otherwise limits the electrical performances. From these measurements a HEMT non-linear model is extracted and is found efficient for the prediction of the large signal power out versus power in characteristic of a cooled HEMT. A further application could be the optimized design of a cooled low phase noise oscillator.
© EDP Sciences 1994