| Issue |
J. Phys. IV France
Volume 04, Number C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-127 - C6-132 | |
| DOI | https://doi.org/10.1051/jp4:1994620 | |
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-127-C6-132
DOI: 10.1051/jp4:1994620
Alabama Microelectronics Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849, U.S.A.
© EDP Sciences 1994
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-127-C6-132
DOI: 10.1051/jp4:1994620
Numerical simulation of SiGe HBT's at cryogenic temperatures
D.M. Richey, J.D. Cressler and R.C. JaegerAlabama Microelectronics Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849, U.S.A.
Abstract
This paper describes SCORPIO, a new one-dimensional, drift-diffusion simulator for modeling silicon-germanium heterojunction bipolar transistors (SiGe HBT's) over a wide temperature range (77-400K). SCORPIO will be used to investigate fundamental low-temperature device physics problems and key device design issues. Comparisons of simulation results with experimental measurements are being used to ensure accurate model calibration.
© EDP Sciences 1994