| Issue |
J. Phys. IV France
Volume 04, Number C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-133 - C6-138 | |
| DOI | https://doi.org/10.1051/jp4:1994621 | |
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-133-C6-138
DOI: 10.1051/jp4:1994621
Faculty of Electrical and Computer Engineering, University of Ljubljana, Trzaska 25, 61000 Ljubljana, Slovenia
© EDP Sciences 1994
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-133-C6-138
DOI: 10.1051/jp4:1994621
Modelling heavy doping effects for low temperature device simulations
S. Sokolic and S. AmonFaculty of Electrical and Computer Engineering, University of Ljubljana, Trzaska 25, 61000 Ljubljana, Slovenia
Abstract
A new temperature dependent apparent bandgap narrowing model, appropriate for low temperature device simulations is proposed. The model is based on the decomposition of apparent bandgap narrowing in equilibrium into different contributions at 300K and on the theoretical temperature dependence of each phenomenon. Specific heavy doping effects that can be important at low temperatures are discussed. Temperature dependence of apparent bandgap narrowing in equilibrium is more significant at high concentration of ionized impurities, where apparent bandgap narrowing decreases with decreasing temperature, as a consequence of temperature dependent degeneracy
© EDP Sciences 1994