EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS p. C6-3 P.R. WILSHAW, T.S. FELL et M.D. COTEAU DOI: https://doi.org/10.1051/jp4:1991601 PDF (2.149 MB)
QUANTITATIVE EVALUATION OF RECOMBINATION ACTIVITY OF DISLOCATIONS BY COMBINED SEM-CL/EBIC p. C6-15 J. SCHREIBER et S. HILDEBRANDT DOI: https://doi.org/10.1051/jp4:1991602 PDF (204.8 KB)
ANALYSIS OF THE RECOMBINATION VELOCITY AND OF THE EBIC AND CATHODOLUMINESCENCE CONTRAST AT A DISLOCATION p. C6-21 R.J. TARENTO et Y. MARFAING DOI: https://doi.org/10.1051/jp4:1991603 PDF (63.91 KB)
NUMERICAL ANALYSIS OF THE TEMPERATURE DEPENDENCE OF EBIC AND CL CONTRASTS p. C6-23 M. ECKSTEIN et H.-U. HABERMEIER DOI: https://doi.org/10.1051/jp4:1991604 PDF (239.8 KB)
RECENT STATE OF THE THEORY OF THE METHODS OF INDUCED CONCENTRATION p. C6-29 A.V. SAMSONOVICH, V.V SIROTKIN, N.G. USHAKOV et S.I. ZAITSEV DOI: https://doi.org/10.1051/jp4:1991605 PDF (291.8 KB)
RECOMBINATION MECHANISM AT DISLOCATIONS IN GaAs EBIC CONTRAST STUDY p. C6-35 B. SIEBER et J.L. FARVACQUE DOI: https://doi.org/10.1051/jp4:1991606 PDF (88.44 KB)
RECENT RESULTS IN THE THEORETICAL DESCRIPTION OF CL AND EBIC DEFECT CONTRASTS p. C6-39 S. HILDEBRANDT, J. SCHREIBER et W. HERGERT DOI: https://doi.org/10.1051/jp4:1991607 PDF (666.8 KB)
DISCUSSION OF THE CONVERGENCE PROPERTIES OF THE PERTURBATION SERIES USED IN THE CALCULATION OF EBIC- AND CL-CONTRASTS p. C6-45 W. HERGERT, L. PASEMANN et S. HILDEBRANDT DOI: https://doi.org/10.1051/jp4:1991608 PDF (568.4 KB)
COMPUTER PROCESSING OF EBIC SIGNALS p. C6-51 O.V. KONONCHUK, N.G. USHAKOV, E.B. YAKIMOV et S.I. ZAITSEV DOI: https://doi.org/10.1051/jp4:1991609 PDF (212.9 KB)
INVESTIGATION OF MINORITY CARRIER RECOMBINATION IN GaAs : Sn BY MEANS OF EBIC AND CL p. C6-57 G. OELGART et N. PUHLMANN DOI: https://doi.org/10.1051/jp4:1991610 PDF (488.8 KB)
INFLUENCE OF THE DEPLETED ZONE ON THE EBIC CONTRAST : A SIMPLE DERIVATION. APPLICATION TO THE DISLOCATION AND GRAINBOUNDARY CASES p. C6-63 D.E. MEKKI et R.J. TARENTO DOI: https://doi.org/10.1051/jp4:1991611 PDF (172.1 KB)
INFLUENCE OF THE INJECTION ON THE ELECTRON-BEAM INDUCED CURRENT COLLECTION EFFICIENCY p. C6-71 D.E. MEKKI et R.J. TARENTO DOI: https://doi.org/10.1051/jp4:1991612 PDF (89.5 KB)
IN PLANE INVESTIGATION OF SILICON GRAIN BOUNDARIES - MODEL AND EXPERIMENT p. C6-75 M. STEMMER DOI: https://doi.org/10.1051/jp4:1991613 PDF (97.40 KB)
THEORETICAL STUDY OF HIGH INJECTION EFFECTS IN EBIC MEASUREMENTS OF GRAIN BOUNDARY RECOMBINATION VELOCITY IN SILICON p. C6-77 J.-L. MAURICE et Y. MARFAING DOI: https://doi.org/10.1051/jp4:1991614 PDF (533.2 KB)
ADVANTAGES OF ac-EBIC IN DETERMINING THE SEMICONDUCTOR PARAMETERS p. C6-83 A. ROMANOWSKI DOI: https://doi.org/10.1051/jp4:1991615 PDF (164.9 KB)
DEVELOPMENTS OF IRBIC AND QIRBIC IN DEFECT STUDIES : A REVIEW p. C6-89 A. CAVALLINI et A. CASTALDINI DOI: https://doi.org/10.1051/jp4:1991616 PDF (1.637 MB)
DIRECT MEASUREMENT OF THE LOCAL DIFFUSION LENGTH GRAIN BOUNDARIES BY EBIC WITHOUT A SCHOTTKY CONTACT p. C6-101 J. PALM et H. ALEXANDER DOI: https://doi.org/10.1051/jp4:1991617 PDF (1.068 MB)
MODELLING OF THE ELECTRON-BEAM-INDUCED CURRENT AT A METAL-p-Si SCHOTTKY CONTACT : COMPARISON WITH EXPERIMENT p. C6-107 A. ZOZIME, I. DELIDAIS et Y. MARFAING DOI: https://doi.org/10.1051/jp4:1991618 PDF (240.1 KB)
CATHODOLUMINESCENCE QUANTUM WELL STUDIES p. C6-117 C.A. WARWICK DOI: https://doi.org/10.1051/jp4:1991619 PDF (2.242 MB)
HIGH RESOLUTION TEM-CL FROM THE CROSS-SECTIONAL SPECIMENS OF GaAs/AlGaAs QWs p. C6-125 J. WANG, J.W. STEEDS et M. HENINI DOI: https://doi.org/10.1051/jp4:1991620 PDF (1.450 MB)
DIFFUSION LENGTH MEASUREMENTS OF HETEROJUNCTION THIN FILMS BY JUNCTION-EBIC p. C6-131 G. JÄGER-WALDAU, D. SCHMID et A. JÄGER-WALDAU DOI: https://doi.org/10.1051/jp4:1991621 PDF (913.2 KB)
AN INVESTIGATION OF CHARGE STATES IN ELECTRON IRRADIATED LOW NITRIDED SILICONDIOXIDE FILMS p. C6-137 V. RANK, M. KOPP, G. WEIDNER et M. NOVAKOWSKI DOI: https://doi.org/10.1051/jp4:1991622 PDF (188.5 KB)
LUMINESCENCE CHARACTERIZATION OF GaAs SINGLE QUANTUM WELLS p. C6-143 R. MITDANK, H. HAEFNER, E. SCHULZE et G. OELGART DOI: https://doi.org/10.1051/jp4:1991623 PDF (1.111 MB)
MATERIALS AND INTERFACES CHARACTERIZATION BY MICRO-RAMAN SPECTROSCOPY p. C6-151 P.V. HUONG DOI: https://doi.org/10.1051/jp4:1991624 PDF (1.036 MB)
NEW DEVELOPMENT IN CONFOCAL SCANNING OPTICAL MICROSCOPY AND ITS APPLICATION TO THE STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SEMICONDUCTORS p. C6-163 P.S. APLIN DOI: https://doi.org/10.1051/jp4:1991625 PDF (1.059 MB)
CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC p. C6-173 M. KITTLER, J. LÄRZ, G. MORGENSTERN et W. SEIFERT DOI: https://doi.org/10.1051/jp4:1991626 PDF (2.346 MB)
EBIC INVESTIGATIONS OF EXTENDED DEFECTS IN CdTe p. C6-181 G.N. PANIN et E.B. YAKIMOV DOI: https://doi.org/10.1051/jp4:1991627 PDF (2.190 MB)
QUANTITATIVE DETERMINATION OF THE RECOMBINING ACTIVITIES OF 60° AND SCREW DISLOCATIONS IN FZ AND CZ SILICON p. C6-187 B. PICHAUD, F. MINARI et S. MARTINUZZI DOI: https://doi.org/10.1051/jp4:1991628 PDF (2.501 MB)
NEW POSSIBILITIES OF EBIC FOR DISLOCATION STUDY p. C6-193 E.B. YAKIMOV DOI: https://doi.org/10.1051/jp4:1991629 PDF (300.0 KB)
LBIC INVESTIGATION OF PHOSPHORUS GETTERED MULTICRYSTALLINE SILICON WAFERS p. C6-199 I. PERICHAUD, M. STEMMER et S. MARTINUZZI DOI: https://doi.org/10.1051/jp4:1991630 PDF (1.696 MB)
ON THE EBIC BRIGHT CONTRAST AT THE DOT-AND-HALO FEATURES IN GaAs p. C6-205 C. FRIGERI DOI: https://doi.org/10.1051/jp4:1991631 PDF (1.877 MB)
THE EFFECT OF DIFFERENT TRANSITION METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS p. C6-211 T.S. FELL et P.R. WILSHAW DOI: https://doi.org/10.1051/jp4:1991632 PDF (1.421 MB)
INVESTIGATION OF ELECTRICAL PROPERTY INHOMOGENEITIES FORMED BY PLASMA ETCHING p. C6-217 I.E. BONDARENKO, S.V. KOVESHNIKOV, E.B. YAKIMOV et N.A. YARYKIN DOI: https://doi.org/10.1051/jp4:1991633 PDF (706.3 KB)
TEMPERATURE DEPENDENCE OF THE SPACE-CHARGE-REGION WIDTH OF A Ti-nGaAs SCHOTTKY DIODE EBIC STUDY p. C6-223 B. SIEBER et P. CARTON DOI: https://doi.org/10.1051/jp4:1991634 PDF (62.38 KB)
CATHODOLUMINESCENCE AND ELECTRON BEAM INDUCED CURRENT STUDY OF HYDROGEN TREATMENT OF p-n GaAs JUNCTION p. C6-225 D. ARAÚJO, L. PAVESI, NGUYEN HONG KY, J.D. GANIÈRE et F.K . REINHART DOI: https://doi.org/10.1051/jp4:1991635 PDF (289.0 KB)
ELECTRICAL ACTIVITY OF Al DOPED SILICON ∑ 9 BICRYSTAL BY S.T.E.B.I.C. p. C6-231 T. BENABBAS et J.-Y. LAVAL DOI: https://doi.org/10.1051/jp4:1991636 PDF (1.423 MB)
INFRARED LBIC SCAN MAPS APPLIED TO ALUMINIUM GETTERED MULTICRYSTALLINE SILICON WAFERS p. C6-237 J.Y. NATOLI, M. PASQUINELLI, F. FLORET et S. MARTINUZZI DOI: https://doi.org/10.1051/jp4:1991637 PDF (532.1 KB)
THERMAL WAVE PROBING OF THE OPTICAL, ELECTRONIC AND THERMAL PROPERTIES OF SEMICONDUCTORS p. C6-241 D. FOURNIER et B.C. FORGET DOI: https://doi.org/10.1051/jp4:1991638 PDF (929.8 KB)
CHARACTERIZATION OF MULTILAYERS ADHERENCE ON GaAs SUBSTRATE BY INFRARED IMAGING AND CORRELATION TO ASSOCIATED MICROSCOPY STUDIES p. C6-253 J.M. TEILLERIE, M. THOLOMIER et J.E BRESSE DOI: https://doi.org/10.1051/jp4:1991639 PDF (666.1 KB)
HIGH RESOLUTION ELECTRON BEAM INJECTION IN SEMICONDUCTORS USING A SCANNING TUNNELING MICROSCOPE p. C6-271 S.F. ALVARADO, Ph. RENAUD et H.P. MEIER DOI: https://doi.org/10.1051/jp4:1991641 PDF (212.7 KB)
ELECTRONIC TRANSPORT PROPERTIES CHARACTERIZATION OF SILICON WAFERS BY MODULATED PHOTOREFLECTANCE p. C6-277 B.C. FORGET et D. FOURNIER DOI: https://doi.org/10.1051/jp4:1991642 PDF (608.0 KB)
USE OF SCANNING ELECTRON ACOUSTIC MICROSCOPY FOR III-V COMPOUNDS DEVICES ANALYSIS p. C6-285 J. F. BRESSE DOI: https://doi.org/10.1051/jp4:1991643 PDF (1.222 MB)
CHARACTERIZATION OF SEMIINSULATING GaAs : Cr BY SCANNING ELECTRON ACOUSTIC MICROSCOPY p. C6-295 B. MÉNDEZ et J. PIQUERAS DOI: https://doi.org/10.1051/jp4:1991644 PDF (533.8 KB)
CHARACTERIZATION OF AlGaAs/GaAs HBTs BY LOCALIZED FILTERED CATHODOLUMINESCENCE p. C6-297 C. DUBON-CHEVALLIER, A.C. PAPADOPOULO, V. AMARGER, C. BESOMBES, B. DESCOUTS et A.M. POUGNET DOI: https://doi.org/10.1051/jp4:1991645 PDF (1.041 MB)
EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS p. C6-305 G. VANDERSCHAEVE, C. LEVADE, A. FARESS, J.J. COUDERC et D. CAILLARD DOI: https://doi.org/10.1051/jp4:1991646 PDF (842.0 KB)
EBIC AND CL STUDY OF LASER DEGRADATION p. C6-317 P. HENOC, R. BENETTON-MARTINS et B. AKAMATSU DOI: https://doi.org/10.1051/jp4:1991647 PDF (680.5 KB)
LIMITATIONS AND FURTHER DEVELOPMENT OF BEAM INJECTION METHODS. A SYNTHESIS p. C6-325 A. JAKUBOWICZ DOI: https://doi.org/10.1051/jp4:1991648 PDF (950.9 KB)
CAPACITANCE TRANSIENT SPECTROSCOPY (DLTS) OF EXTENDED DEFECTS IN SEMICONDUCTORS p. C6-335 U. GNAUERT, J. KRONEWITZ, M. SEIBT et W. SCHRÖTER DOI: https://doi.org/10.1051/jp4:1991649 PDF (64.13 KB)
A SUPERIOR CATHODOLUMINESCENCE SPECTRAL ANALYSIS AND IMAGING SYSTEM p. C6-337 P.J. WRIGHT DOI: https://doi.org/10.1051/jp4:1991650 PDF (933.4 KB)
A NOVEL COMMERCIAL SCANNING-DLTS EQUIPMENT p. C6-343 O. BREITENSTEIN et H. RAITH DOI: https://doi.org/10.1051/jp4:1991651 PDF (847.7 KB)
