Journal de Physique IV

CVD process engineering : modelling aspects p. C3-3

J.-P. COUDERC

DOI: https://doi.org/10.1051/jp4:1993301

Modelling of CVD reactors : thermochemical and mass transport approaches for Si_1-xGe_x deposition p. C3-17

H. ROUCH, M. PONS, A. BENEZECH, J.N. BARBIER, C. BERNARD and R. MADAR

DOI: https://doi.org/10.1051/jp4:1993302

Investigation of the kinetics of MOCVD with a stagnation cell p. C3-25

O. YU GORBENKO, W. DECKER and G. WAHL

DOI: https://doi.org/10.1051/jp4:1993303

On the behavior of rapid thermal CVD reactors p. C3-35

S. AIT AMER, S. MAGNAUDEIX and P. DUVERNEUIL

DOI: https://doi.org/10.1051/jp4:1993304

Tractable chemical models for CVD of silicon and carbon p. C3-43

E. BLANQUET and S.A. GOKOGLU

DOI: https://doi.org/10.1051/jp4:1993305

Low pressure silicon selective epitaxial growth and its thermodynamic considerations p. C3-51

L. YE, B.M. ARMSTRONG and H.S. GAMBLE

DOI: https://doi.org/10.1051/jp4:1993306

Kinetics of the EVD process for growing thin zirconia/yttria films on porous alumina substrates p. C3-59

H.W. BRINKMAN, G.Z. CAO, J. MEIJERINK, K.J. DE VRIES and A.J. BURGGRAAF

DOI: https://doi.org/10.1051/jp4:1993307

On the kinetics of modified CVD in porous ceramics p. C3-67

G.Z. CAO, H.W. BRINKMAN, J. MEIJERINK, K.J. DE VRIES and A.J. BURGGRAAF

DOI: https://doi.org/10.1051/jp4:1993308

The thermodynamic properties of tetraethoxysilane (TEOS) and an infrared study of its thermal decomposition p. C3-75

M.G.M. VAN DER VIS, E.H.P. CORDFUNKE and R.J.M. KONINGS

DOI: https://doi.org/10.1051/jp4:1993309

Heat transfer studies in cold CVD reactors using holographic interferometry p. C3-83

H. CHEHOUANI, S. BENET, S. BRUNET and B. ARMAS

DOI: https://doi.org/10.1051/jp4:1993310

Formation of CVD copper films investigated by surface analysis and reflectivity p. C3-91

Z. HAMMADI, B. LECOHIER, A. CROS and H. DALLAPORTA

DOI: https://doi.org/10.1051/jp4:1993311

Mass spectrometry study of the gas phase reactions in the CVD of Si and in situ-phosphorus doped Si in order to explain the different growth rates p. C3-99

J. SIMON, R. FEURER, A. REYNES and R. MORANCHO

DOI: https://doi.org/10.1051/jp4:1993312

Mass spectrometric study of laser induced pyrolytic decomposition of TIBA and TMAA p. C3-107

C. POPOV, B. IVANOV and V. SHANOV

DOI: https://doi.org/10.1051/jp4:1993313

A consideration of adsorption processes in the CVD of polysilicon p. C3-115

M.L. HITCHMAN and J. ZHAO

DOI: https://doi.org/10.1051/jp4:1993314

Elaboration of in situ phosphorus doped polysilicon films under LPCVD conditions : process modelling and characterization p. C3-123

A. TOUNSI, E. SCHEID, C. AZZARO, P. DUVERNEUIL and J.P. COUDERC

DOI: https://doi.org/10.1051/jp4:1993315

Transport phenomena in a cold wall vertical reactor for metalorganic vapor phase growth of β-SiC layers p. C3-131

H. CHEHOUANI, S. BENET, B. ARMAS, C. COMBESCURE, A. FIGUERAS and S. GARELIK

DOI: https://doi.org/10.1051/jp4:1993316

Growth studies and physical characterizations of Pb-Se-Te epilayers grown by H.W.E. p. C3-139

A. OBADI, S. CHARAR, C. FAU, O. DOS SANTOS, M. AVEROUS, S. DAL CORSO, B. LIAUTARD and J.C. TEDENAC

DOI: https://doi.org/10.1051/jp4:1993317

Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe / III-V (GaAs, InP, GaSb) p. C3-147

A. HAIDOUX, P. TOMASINI, M. MAURIN, J.C. TEDENAC, D. COQUILLAT, A. RIBAYROL, J.P. LASCARAY, D. BOUCHARA, A. ABOUNADI, J. CALAS and B. DUCOURANT

DOI: https://doi.org/10.1051/jp4:1993318

Residual stresses in chemically vapor deposited coatings in the Ti-C-N system p. C3-155

S. EROGLU and B. GALLOIS

DOI: https://doi.org/10.1051/jp4:1993319

Si-C films on alloys : characterization of ageing behavior in air p. C3-163

J.M. AGULLO, M. DUCARROIR, F. CLEMENDOT and A. LINA

DOI: https://doi.org/10.1051/jp4:1993320

AES characterization and depth profiles measurements of AIN thin films on SiO₂ substrates p. C3-171

B. ASPAR, R. BERJOAN, B. ARMAS and D. PERARNAU

DOI: https://doi.org/10.1051/jp4:1993321

Texture analyses of chemically vapor deposited coatings in the Ti-C-N system by wide film Debye-Scherrer X-ray diffraction technique p. C3-177

S. EROGLU and B. GALLOIS

DOI: https://doi.org/10.1051/jp4:1993322

EPMA and ellipsometric characterization of PECVD boron-carbon films p. C3-183

A.I. KANAEV, S. Yu. RYBAKOV and M.N. CHURAEVA

DOI: https://doi.org/10.1051/jp4:1993323

Ellipsometric analysis for CVD thick films on weakly absorbing substrates p. C3-189

M.N. CHURAEVA

DOI: https://doi.org/10.1051/jp4:1993324

High temperature behaviour and oxidation resistance of carbon-boron-nitrogen compounds obtained by LPCVD p. C3-195

A. DERRE, L. FILIPOZZI and F. PERON

DOI: https://doi.org/10.1051/jp4:1993325

Monte Carlo simulation on the step coverage formation processes in chemical vapor deposition p. C3-203

Y. SHIMOGAKI, T. UCHIDA, S. SHIGA, Y. EGASHIRA and H. KOMIYAMA

DOI: https://doi.org/10.1051/jp4:1993326

Thermal and laser-activated CVD : a comparison p. C3-207

J.-O. CARLSSON

DOI: https://doi.org/10.1051/jp4:1993327

Laser induced chemical vapour deposition of TiN coatings at atmospheric pressure p. C3-209

Y.H. CROONEN and G. VERSPUI

DOI: https://doi.org/10.1051/jp4:1993328

Structure and morphology of laser assisted chemical vapour deposited TiC coatings p. C3-217

M.L.F. PARAMÊS and O. CONDE

DOI: https://doi.org/10.1051/jp4:1993329

Laser-assisted chemical vapour deposition of TiSi₂: aspects of deposition and etching p. C3-225

H. WESTBERG, M. BOMAN and J.-O. CARLSSON

DOI: https://doi.org/10.1051/jp4:1993330

A study of remote plasma enhanced CVD of silicon nitride films p. C3-233

S.E. ALEXANDROV, M.L. HITCHMAN and S. SHAMLIAN

DOI: https://doi.org/10.1051/jp4:1993331

A comparative study of O₂/SiH₄ and N₂O/SiH₄ mixtures for SiO₂ deposition in a microwave afterglow p. C3-241

H. DEL PUPPO, J. DESMAISON and L. PECCOUD

DOI: https://doi.org/10.1051/jp4:1993332

SiCN coatings prepared by PACVD from TMS-NH₃-Ar system on steel p. C3-247

M. DUCARROIR, W. ZHANG and R. BERJOAN

DOI: https://doi.org/10.1051/jp4:1993333

LCVD of aluminium stripes obtained by pyrolysis of TMAA and TMA p. C3-255

V. SHANOV, C. POPOV and B. IVANOV

DOI: https://doi.org/10.1051/jp4:1993334

Studies of laser induced-MOCVD zinc oxide films p. C3-261

Z. TAN, P. REN and W. LUO

DOI: https://doi.org/10.1051/jp4:1993335

Deposition of titanium-based films by laser-assisted thermal CVD of titanium tetrachloride p. C3-265

R. ALEXANDRESCU, R. CIREASA, B. DRAGNEA, I. MORJAN, I. VOICU and A. ANDREI

DOI: https://doi.org/10.1051/jp4:1993336

Comparative study of copper deposits obtained by thermal decomposition and photo-assisted chemical vapour deposition of 3-diketonate complexes p. C3-273

M. KARSI, A. REYNES and R. MORANCHO

DOI: https://doi.org/10.1051/jp4:1993337

Growth studies of laser-induced CVD diamond films p. C3-281

W. LUO, P. REN and Z. TAN

DOI: https://doi.org/10.1051/jp4:1993338

Some considerations of MOCVD for the preparation of high T_c thin films p. C3-287

M.L. HITCHMAN and S.H. SHAMLIAN

DOI: https://doi.org/10.1051/jp4:1993339

Deposition of titanium nitride thin films at low temperatures by CVD using metalorganic and organometallic titanium compounds as precursors p. C3-289

C.I.M.A. SPEE, J.L. LINDEN, E.A. VAN DER ZOUWEN-ASSINK, K. TIMMER, F. VERBEEK, H.A. MEINEMA, D.M. FRIGO and S. VAN DER VEN

DOI: https://doi.org/10.1051/jp4:1993340

Preparation of iridium and platinum films by MOCVD and their properties p. C3-297

T. GOTO, R. VARGAS and T. HIRAI

DOI: https://doi.org/10.1051/jp4:1993341

Deposition of ZrO₂ and Y₂O₃-stabilized ZrO₂ from β-diketonates p. C3-305

M. PULVER, G. WAHL, H. SCHEYTT and M. SOMMER

DOI: https://doi.org/10.1051/jp4:1993342

Vanadium carbide films produced by plasma-assisted metal-organic chemical vapour deposition p. C3-313

H. BERNDT, A.-Q. ZENG, H.-R. STOCK and P. MAYR

DOI: https://doi.org/10.1051/jp4:1993343

Preparation of YBa₂Cu₃O₇ films by low pressure MOCVD using liquid solution sources p. C3-321

F. WEISS, K. FRÖHLICH, R. HAASE, M. LABEAU, D. SELBMANN, J.P. SENATEUR and O. THOMAS

DOI: https://doi.org/10.1051/jp4:1993344

LPCVD of SiC layers in a hot-wall reactor using TMS precursor p. C3-329

F. HENRY, P. MARTI, Y. CASAUX, C. COMBESCURE, A. FIGUERAS, V. MADIGOU, R. RODRIGUEZ-CLEMENTE, A. MAZEL, J. SEVELY and B. ARMAS

DOI: https://doi.org/10.1051/jp4:1993345

Process characterization for LPCVD TEOS-ozone based SiO₂ films p. C3-337

L. ZANOTTI, S. ROJAS, F. DOGHIERI and F. SANTARELLI

DOI: https://doi.org/10.1051/jp4:1993346

Growth kinetics of copper thin films in different MOCVD systems p. C3-345

T. GERFIN, M. BECHT and K.-H. DAHMEN

DOI: https://doi.org/10.1051/jp4:1993347

YBa₂Cu₃O_7-x thin films deposition on YSZ substrates by MOCVD p. C3-353

J. SANTISO and A. FIGUERAS

DOI: https://doi.org/10.1051/jp4:1993348

Effect of CVD process parameters on phase and chemical composition of BSCCO thin films p. C3-361

V.N. FUFLYIGIN, A.R. KAUL and S.A. POZIGUN

DOI: https://doi.org/10.1051/jp4:1993349

Titanium carbide and titanium carbonitride obtained by chemical vapor deposition from orgranometallic precursor in the range 450-800°C p. C3-367

J. SLIFIRSKI and F. TEYSSANDIER

DOI: https://doi.org/10.1051/jp4:1993350

New principle of feeding for flash evaporation MOCVD devices p. C3-375

A.R. KAUL and B.V. SELEZNEV

DOI: https://doi.org/10.1051/jp4:1993351

Synthesis and properties of barium diketonates as precursors for MOCVD p. C3-379

A.A. DROZDOV, S.I. TROYANOV, N.P. KUZMINA, L.I. MARTYNENKO, A.S. ALIKHANYAN and I.P. MALKEROVA

DOI: https://doi.org/10.1051/jp4:1993352

Rare earth β-diketonate and carboxylate metal complexes as precursors for MOCVD of oxide films p. C3-385

N.P. KUZMINA, L.I. MARTYNENKO, Z.A. TU, A.R. KAUL, G.V. GIRICHEV, N.I. GIRICHEVA, A.N. RYKOV and Y.M. KORENEV

DOI: https://doi.org/10.1051/jp4:1993353

Optical filters by the pyrolysis of metal-organics p. C3-391

S.B. DESU

DOI: https://doi.org/10.1051/jp4:1993354

Experimental and chemical kinetic study of silicon nitride via LPCVD at low temperature from disilane and ammonia p. C3-395

R. HENDA, E. SCHEID, L.K. KOUASSI, J. SAMITIER and A. EL HASSANI

DOI: https://doi.org/10.1051/jp4:1993355

Si/Si_1-x Ge_x/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel heterodevice p. C3-403

J. MUROTA, T. MAEDA, K. GOTO, K. SAKAMOTO, K. AIZAWA, S. USHIODA and S. ONO

DOI: https://doi.org/10.1051/jp4:1993356

Comparison of physical and electrical properties of ULPCVD and VLPCVD in situ phosphorus doped polysilicon or undoped polysilicon p. C3-411

M. SARRET, A. LIBA, O. BONNAUD, F. LE BIHAN and B. FORTIN

DOI: https://doi.org/10.1051/jp4:1993357

Gas-source molecular beam epitaxy growth of Ga_xIn_1-xAs_yP_1-y on GaAs for photonic and electronic applications p. C3-441

G. ZHANG, H. ASONEN and M. PESSA

DOI: https://doi.org/10.1051/jp4:1993361

Silicon atomic layer growth using flash heating in CVD p. C3-449

M. SAKURABA, J. MUROTA and S. ONO

DOI: https://doi.org/10.1051/jp4:1993362

Laser applications in CVD p. C3-501

M. STUKE

DOI: https://doi.org/10.1051/jp4:1993369

Physical and tribological properties of a-Si_1-xC_x : H coatings prepared by r.f. plama-assisted chemical vapour deposition p. C3-503

J. SMEETS, J. MENEVE, R. JACOBS, L. EERSELS and E. DEKEMPENEER

DOI: https://doi.org/10.1051/jp4:1993370

Chemical vapor composites (CVC) p. C3-541

P. REAGAN

DOI: https://doi.org/10.1051/jp4:1993375

Mechanical properties of SiC/SiC composites with a treatment of the fiber/matrix interfaces by metal-organic chemical vapor co-deposition of C and Si_xC_1-x p. C3-549

J.M. AGULLO, F. MAURY and J.M. JOUIN

DOI: https://doi.org/10.1051/jp4:1993376

Chemical vapour deposition of Al₂O₃ on titanium oxides p. C3-557

E. FREDRIKSSON and J.-O. CARLSSON

DOI: https://doi.org/10.1051/jp4:1993377

Chemical vapor deposition of pyrolytic carbon on polished substrates p. C3-563

J.-F. DESPRÉS, C. VAHLAS and A. OBERLIN

DOI: https://doi.org/10.1051/jp4:1993378

SiC-TiSi₂ materials codeposited by CVD p. C3-571

M. MALINE, F. TEYSSANDIER and R. HILLEL

DOI: https://doi.org/10.1051/jp4:1993379

Ion-assisted CVD of graded diamond like carbon (DLC) based coatings p. C3-579

D.P. MONAGHAN, D.G. TEER, R.D. ARNELL, I. EFEOGLU and W. AHMED

DOI: https://doi.org/10.1051/jp4:1993380

LPCVD of Al₂O₃ layers using a hot-wall reactor p. C3-589

C. LABATUT, C. COMBESCURE and B. ARMAS

DOI: https://doi.org/10.1051/jp4:1993381

Diamond synthesis at high filament temperature p. C3-597

D.M. LI, T. MÄNTILÄ and J. LEVOSKA

DOI: https://doi.org/10.1051/jp4:1993382

Preparation and properties of coiled carbon fibers by the catalitic pyrolysis of acetylene p. C3-599

S. MOTOJIMA, I. HASEGAWA, S. KAGIYA, S. ASAKURA, M. KAWAGUCHI and H. IWANAGA

DOI: https://doi.org/10.1051/jp4:1993383

Multi CVD coated layers and their effect on the performance of cutting tools p. C3-607

R. PORAT

DOI: https://doi.org/10.1051/jp4:1993384

Characterization and tribological properties of the oxide film formed by eximer laser surface treatment of high chromium tool steel p. C3-609

J.-P. HIRVONEN, J.R. JERVIS and R. LAPPALAINEN

DOI: https://doi.org/10.1051/jp4:1993385

Structures and properties of Y-ZrO₂ thin films deposited by reactive r.f. sputtering p. C3-611

Y.-H. WANG and X.-P. LI

DOI: https://doi.org/10.1051/jp4:1993386

Le Journal de Physique IV

Volume 03 / Numéro C3 (Août 1993)

Proceedings of the Ninth European Conference on Chemical Vapour Deposition

CVD process engineering : modelling aspects p. C3-3

Modelling of CVD reactors : thermochemical and mass transport approaches for Si1-xGex deposition p. C3-17

Investigation of the kinetics of MOCVD with a stagnation cell p. C3-25

On the behavior of rapid thermal CVD reactors p. C3-35

Tractable chemical models for CVD of silicon and carbon p. C3-43

Low pressure silicon selective epitaxial growth and its thermodynamic considerations p. C3-51

Kinetics of the EVD process for growing thin zirconia/yttria films on porous alumina substrates p. C3-59

On the kinetics of modified CVD in porous ceramics p. C3-67

The thermodynamic properties of tetraethoxysilane (TEOS) and an infrared study of its thermal decomposition p. C3-75

Heat transfer studies in cold CVD reactors using holographic interferometry p. C3-83

Formation of CVD copper films investigated by surface analysis and reflectivity p. C3-91

Mass spectrometry study of the gas phase reactions in the CVD of Si and in situ-phosphorus doped Si in order to explain the different growth rates p. C3-99

Mass spectrometric study of laser induced pyrolytic decomposition of TIBA and TMAA p. C3-107

A consideration of adsorption processes in the CVD of polysilicon p. C3-115

Elaboration of in situ phosphorus doped polysilicon films under LPCVD conditions : process modelling and characterization p. C3-123

Transport phenomena in a cold wall vertical reactor for metalorganic vapor phase growth of β-SiC layers p. C3-131

Growth studies and physical characterizations of Pb-Se-Te epilayers grown by H.W.E. p. C3-139

Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe / III-V (GaAs, InP, GaSb) p. C3-147

Residual stresses in chemically vapor deposited coatings in the Ti-C-N system p. C3-155

Si-C films on alloys : characterization of ageing behavior in air p. C3-163

AES characterization and depth profiles measurements of AIN thin films on SiO2 substrates p. C3-171

Texture analyses of chemically vapor deposited coatings in the Ti-C-N system by wide film Debye-Scherrer X-ray diffraction technique p. C3-177

EPMA and ellipsometric characterization of PECVD boron-carbon films p. C3-183

Ellipsometric analysis for CVD thick films on weakly absorbing substrates p. C3-189

High temperature behaviour and oxidation resistance of carbon-boron-nitrogen compounds obtained by LPCVD p. C3-195

Monte Carlo simulation on the step coverage formation processes in chemical vapor deposition p. C3-203

Thermal and laser-activated CVD : a comparison p. C3-207

Laser induced chemical vapour deposition of TiN coatings at atmospheric pressure p. C3-209

Structure and morphology of laser assisted chemical vapour deposited TiC coatings p. C3-217

Laser-assisted chemical vapour deposition of TiSi2: aspects of deposition and etching p. C3-225

A study of remote plasma enhanced CVD of silicon nitride films p. C3-233

A comparative study of O2/SiH4 and N2O/SiH4 mixtures for SiO2 deposition in a microwave afterglow p. C3-241

SiCN coatings prepared by PACVD from TMS-NH3-Ar system on steel p. C3-247

LCVD of aluminium stripes obtained by pyrolysis of TMAA and TMA p. C3-255

Studies of laser induced-MOCVD zinc oxide films p. C3-261

Deposition of titanium-based films by laser-assisted thermal CVD of titanium tetrachloride p. C3-265

Comparative study of copper deposits obtained by thermal decomposition and photo-assisted chemical vapour deposition of 3-diketonate complexes p. C3-273

Growth studies of laser-induced CVD diamond films p. C3-281

Some considerations of MOCVD for the preparation of high Tc thin films p. C3-287

Deposition of titanium nitride thin films at low temperatures by CVD using metalorganic and organometallic titanium compounds as precursors p. C3-289

Preparation of iridium and platinum films by MOCVD and their properties p. C3-297

Deposition of ZrO2 and Y2O3-stabilized ZrO2 from β-diketonates p. C3-305

Vanadium carbide films produced by plasma-assisted metal-organic chemical vapour deposition p. C3-313

Preparation of YBa2Cu3O7 films by low pressure MOCVD using liquid solution sources p. C3-321

LPCVD of SiC layers in a hot-wall reactor using TMS precursor p. C3-329

Process characterization for LPCVD TEOS-ozone based SiO2 films p. C3-337

Growth kinetics of copper thin films in different MOCVD systems p. C3-345

YBa2Cu3O7-x thin films deposition on YSZ substrates by MOCVD p. C3-353

Effect of CVD process parameters on phase and chemical composition of BSCCO thin films p. C3-361

Titanium carbide and titanium carbonitride obtained by chemical vapor deposition from orgranometallic precursor in the range 450-800°C p. C3-367

New principle of feeding for flash evaporation MOCVD devices p. C3-375

Synthesis and properties of barium diketonates as precursors for MOCVD p. C3-379

Rare earth β-diketonate and carboxylate metal complexes as precursors for MOCVD of oxide films p. C3-385

Optical filters by the pyrolysis of metal-organics p. C3-391

Experimental and chemical kinetic study of silicon nitride via LPCVD at low temperature from disilane and ammonia p. C3-395

Si/Si1-x Gex/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel heterodevice p. C3-403

Comparison of physical and electrical properties of ULPCVD and VLPCVD in situ phosphorus doped polysilicon or undoped polysilicon p. C3-411

Plasma-enhanced C.V.D. of amorphous GexS1-x, and GexSe1-x films p. C3-419

Low-temperature epitaxial growth of in-situ B-doped Si1-xGex films p. C3-427

Adhesion and leakage current characteristics of selective CVD tungsten films on the silicon substrate p. C3-433

Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications p. C3-441

Silicon atomic layer growth using flash heating in CVD p. C3-449

Direct writing of piezoresistive silicon resistors using laser-induced CVD p. C3-457

Chemical vapour deposition of nitride and oxynitride dielectric films p. C3-465

Electrical properties of interlevel deposited oxides related to polysilicon preparation p. C3-467

CVD - technology of transition metal oxides and their impact on solar energy utilization p. C3-475

Deposition conditions for the growth of textured ZnO thin films by aerosol CVD process p. C3-485

Properties of µPCVD poly-silicon films after rapid thermal annealing p. C3-493

Laser applications in CVD p. C3-501

Physical and tribological properties of a-Si1-xCx : H coatings prepared by r.f. plama-assisted chemical vapour deposition p. C3-503

Titanium borides deposited by chemical vapor deposition thermodynamic calculation and experiments p. C3-511

A study of AlN-Si3N4 codeposits using the L.P.C.V.D. technique p. C3-519

Kinetic laws of the chemical process in the CVD of SiC ceramics from CH3SiCl3-H2 precursor p. C3-527

Chemical vapor deposition of hafnium carbide and hafnium nitride p. C3-535