| Numéro |
J. Phys. IV France
Volume 03, Numéro C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
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|
|---|---|---|
| Page(s) | C3-597 - C3-597 | |
| DOI | https://doi.org/10.1051/jp4:1993382 | |
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
J. Phys. IV France 03 (1993) C3-597-C3-597
DOI: 10.1051/jp4:1993382
1 Institute of Materials Science, Tampere University of Technology, P.O. Box 589, 33101 Tampere, Finland
2 Microelectronics and Material Physics Laboratories, University of Oulu, P.O. Box 400, 90571 Oulu, Finland
© EDP Sciences 1993
J. Phys. IV France 03 (1993) C3-597-C3-597
DOI: 10.1051/jp4:1993382
Diamond synthesis at high filament temperature
D.M. LI1, T. MÄNTILÄ1 and J. LEVOSKA21 Institute of Materials Science, Tampere University of Technology, P.O. Box 589, 33101 Tampere, Finland
2 Microelectronics and Material Physics Laboratories, University of Oulu, P.O. Box 400, 90571 Oulu, Finland
Abstract
Diamond particles and films have been deposited on silicon wafer by using hot filament assisted chemical vapour deposition (HFCVD). Tantalum carbide filaments were used in the temperature range of 2700-2890°C. The filament can be repeatedly used for diamond deposition in CH4/H2/O2 atmosphere without deformation in its geometry. Diamond structure was deposited at high methane concentration up to 12% at filament temperature of 2890°C. By introducing 5.6% of oxygen, the methane concentration can be extended to 16%. Diamond particles and films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy.
© EDP Sciences 1993