J. Phys. IV France 03 (1993) C3-233-C3-240
A study of remote plasma enhanced CVD of silicon nitride filmsS.E. ALEXANDROV1, M.L. HITCHMAN2 and S. SHAMLIAN2
1 Department of Electronic Material Technology, St. Petersburg State Technical University, Polytechnic Street 29, St. Petersburg 195 251, Russia
2 Department of Pure and Applied Chemistry, University of Strathclyde, 295 Cathedral Street, Glasgow G1 1XL, United Kingdon
The growth of silicon nitride (SiNxHy) films from SiH4 and N2 by capacitively coupled remote PECVD is described for the first time. The influence of process parameters on the growth rate, concentration of bonded hydrogen, and properties of deposited films is discussed. The most probable mechanism of film formation is proposed on the basis of the experimental results obtained.
© EDP Sciences 1993