Molecular ways to nanoscale particles and films p. 1 H. Shen and S. Mathur DOI: https://doi.org/10.1051/jp4:20020070 AbstractPDF (729.7 KB)
Real time monitoring of the growth of metallic thin films by in situ pyrometry p. 9 C. Gasqueres, F. Maury and F. Ossola DOI: https://doi.org/10.1051/jp4:20020071 AbstractPDF (462.8 KB)
Preliminary studies of atmospheric pressure plasma enhanced CVD (AP-PECVD) of thin oxide films p. 17 N. McSporran, M.L. Hitchman, S.E. Alexandrov, S.H. Shamlian, S. Turnbull and S. Turnbull DOI: https://doi.org/10.1051/jp4:20020072 AbstractPDF (430.2 KB)
Reflectance anisotropy studies of the oxidation of (001) GaAs surfaces in an MOCVD reactor p. 25 M.N. Simcock, L. He and M.E. Pemble DOI: https://doi.org/10.1051/jp4:20020073 AbstractPDF (262.6 KB)
Controlled-growth of platinum nanoparticles on carbon nanotubes or nanospheres by MOCVD in fluidized bed reactor p. 29 P. Serp, R. Feurer, J.L. Faria and J.L. Figueiredo DOI: https://doi.org/10.1051/jp4:20020074 AbstractPDF (1.604 MB)
Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, 03, TMB, TMPI: Determination of a chemical mechanism p. 37 J.-P. Nieto, B. Caussat, J.-P. Couderc, I. Orain' and L. Jeannerot DOI: https://doi.org/10.1051/jp4:20020075 AbstractPDF (454.6 KB)
Design, synthesis, and application of new Ti precursors compatible with Ba and Sr precursors for BST thin film by MOCVD p. 45 K. Woo DOI: https://doi.org/10.1051/jp4:20020076 AbstractPDF (444.5 KB)
Simulation and validation of SiO2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor p. 51 G.J. Schoof, C.R. Kleijn, H.E.A. Van Den Akker, T.G.M. Oosterlaken, H.J.C.M. Terhorst and F. Huussen DOI: https://doi.org/10.1051/jp4:20020077 AbstractPDF (606.4 KB)
Advances in the use of MOCVD methods for the production of novel photonic bandgap materials p. 63 D.E. Whitehead, M.E. Pemble, H.M. Yates, A. Blanco, C. Lopez, H. Miguez and F.J. Meseguer DOI: https://doi.org/10.1051/jp4:20020078 AbstractPDF (528.0 KB)
Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization p. 69 A. Levesque, A. Bouteville, H. de Baynast and B. Laveissière DOI: https://doi.org/10.1051/jp4:20020079 AbstractPDF (687.3 KB)
Molecular beam mass spectrometry analysis of gaseous species responsible for diamond deposition in microwave plasmas p. 75 O. Aubry, J.-L. Delfau, C. Met, M.I. De Barros, L. Vandenbulcke and C. Vovelle DOI: https://doi.org/10.1051/jp4:20020080 AbstractPDF (638.0 KB)
A study by GC-MS of the decomposition of precursors for the MOCVD of high temperature superconductors p. 85 O.V. Lopaeva, M.L. Hitchman, S.H. Shamlian and D.R. Watson DOI: https://doi.org/10.1051/jp4:20020081 AbstractPDF (470.7 KB)
Growth of carbon nanotubes by fluidized bed catalytic chemical vapor deposition p. 93 D. Venegoni, P. Serp, R. Feurer, Y. Kihn, C. Vahlas and P. Kalck DOI: https://doi.org/10.1051/jp4:20020082 AbstractPDF (811.1 KB)
Vapor-phase synthesis and characterization of ZnSe nanoparticles p. 99 D. Sarigiannis, R.P. Pawlowski, J.D. Peck, T.J. Mountziaris, G. Kioseoglou and A. Petrou DOI: https://doi.org/10.1051/jp4:20020083 AbstractPDF (685.3 KB)
Modification of multiwalled carbon nanotubes by different breaking processes p. 107 I. Vesselényi, A. Siska, D. Méhn, K. Niesz, Z. Konya, J.B. Nagy and I. Kiricsi DOI: https://doi.org/10.1051/jp4:20020084 AbstractPDF (498.6 KB)
Unveiling the magic of H2S on the CVD-Al2O3 coating. Effect of H2S on the water gas concentration p. 113 T. Oshika, M. Sato and A. Nishiyama DOI: https://doi.org/10.1051/jp4:20020085 AbstractPDF (502.3 KB)
Multi-model hierarchy approach to simulate barrel reactors for epitaxial silicon deposition p. 121 M. Di Stanislao, G. Valente, S. Fascella, C. Spampinato, M. Masi and S. Carrà DOI: https://doi.org/10.1051/jp4:20020086 AbstractPDF (579.2 KB)
Hydrogen storage in carbon nanotubes produced by CVD p. 129 A. Fonseca, N. Pierard, S. Tollis, G. Bister, Z. Konya, N. Nagaraju and J.B. Nagy DOI: https://doi.org/10.1051/jp4:20020087 AbstractPDF (649.4 KB)
MOCVD of aluminium oxide films using aluminium β-diketonates as precursors p. 139 A. Devi, S.A. Shivashankar and A.G. Samuelson DOI: https://doi.org/10.1051/jp4:20020088 AbstractPDF (728.8 KB)
Conductive Cu-TiO2 thin films obtained via MOCVD p. 147 F. Alvarez y Quintavalle, G.A. Battiston, U. Casellato, D. Fregona, R. Gerbasi and F. Loro DOI: https://doi.org/10.1051/jp4:20020089 AbstractPDF (636.6 KB)
Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature p. 155 M.G. Park, W.S. Choi, J.-H. Boo, Y.T. Kim, D.H. Yoon and B. Hong DOI: https://doi.org/10.1051/jp4:20020090 AbstractPDF (329.4 KB)