SiGe Hetero FETs on silicon at cryogenic temperature p. 3 F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Höck, T. Hackbarth, H.-J. Herzog and U. König DOI: https://doi.org/10.1051/jp420020026 AbstractPDF (605.0 KB)
The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures p. 11 F. Dieudonné, J. Jomaah, C. Raynaud and F. Balestra DOI: https://doi.org/10.1051/jp420020027 AbstractPDF (257.4 KB)
Degradation of hard MOS devices at low temperature p. 15 N.T. Fourches DOI: https://doi.org/10.1051/jp420020028 AbstractPDF (251.8 KB)
Temperature scaling of nanoscale silicon MOSFETs p. 19 V. Sverdlov, Y. Naveh and K.K. Likharev DOI: https://doi.org/10.1051/jp420020029 AbstractPDF (185.4 KB)
Low temperature operation of graded-channel SOI nMOSFETs for analog applications p. 23 M.A. Pavanello, P.G. Der Agopian1, J.A. Martino and D. Flandre DOI: https://doi.org/10.1051/jp420020030 AbstractPDF (192.1 KB)
New silicon devices beyond CMOS p. 27 E. Suzuki, K. Ishii and T. Sekigawa DOI: https://doi.org/10.1051/jp420020031 AbstractPDF (194.3 KB)
Low temperature operation of 0.13 μm Partially-Depleted SOI nMOSFETs with floating body p. 31 M.A. Pavanello, J.A. Martino, A. Mercha, J.M. Rafi, E. Simoen, C. Claeys, H. van Meer and K. De Meyer DOI: https://doi.org/10.1051/jp420020032 AbstractPDF (216.4 KB)
Low frequency noise versus temperature spectroscopy of Ge JFETs, Si JFETs and Si MOSFETs p. 37 D.V. Camin, C.F. Colombo and V. Grassi DOI: https://doi.org/10.1051/jp420020033 AbstractPDF (382.3 KB)
Cryogenic operation of sub-30 nm nMOSFETs: Impact of device architecture p. 45 G. Bertrand, S. Deleonibus, D. Souil, B. Previtali, C. Caillat, G. Guégan, M. Sanquer and F. Balestra DOI: https://doi.org/10.1051/jp420020034 AbstractPDF (269.2 KB)
MOSFET modeling and parameter extraction for low temperature analog circuit design p. 51 P. Martin, M. Bucher and C. Enz DOI: https://doi.org/10.1051/jp420020035 AbstractPDF (342.3 KB)
Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs p. 57 B. Cretu, F. Balestra, G. Ghibaudo and G. Guégan DOI: https://doi.org/10.1051/jp420020036 AbstractPDF (191.1 KB)
Parasitic conduction in a 0.13 μm CMOS technology at low temperature p. 61 A. Mercha, J.M. Rafi, E. Simoen, E. Augendre and C. Claeys DOI: https://doi.org/10.1051/jp420020037 AbstractPDF (185.0 KB)
Ge semiconductor devices for cryogenic power electronics - II p. 67 R.R. Ward, W.J. Dawson, R.K. Kirschman, O. Mueller, R.L. Patterson, J.E. Dickman and A. Hammoud DOI: https://doi.org/10.1051/jp420020038 AbstractPDF (257.5 KB)
Temperature dependence of generation-recombination noise in p-n junctions p. 71 J.A. Jiménez Tejada, A. Godoy, A. Palma and P. Cartujo DOI: https://doi.org/10.1051/jp420020039 AbstractPDF (237.1 KB)
Forming PbTe on Si-substrates for IR sensors p. 75 V.I. Rudakov and I.M. Smirnov DOI: https://doi.org/10.1051/jp420020040 AbstractPDF (237.5 KB)
Semiconductor microcrystals with ultra-high sensitivity to mechanical strain at cryogenic temperatures p. 79 A. Druzhinin, E. Lavitska, I. Maryamova, T. Palewski and A. Kutrakov DOI: https://doi.org/10.1051/jp420020041 AbstractPDF (250.9 KB)
Si nano-devices using an electron-hole system p. 85 A. Fujiwara and Y. Takahashi DOI: https://doi.org/10.1051/jp420020042 AbstractPDF (736.8 KB)
Mesoscopic transport characteristics of nano-scale SOI MOSFETs: Coulomb blockade and localization p. 93 Y. Omura and M. Yamamoto DOI: https://doi.org/10.1051/jp420020043 AbstractPDF (239.9 KB)
Electron transport in silicon nanostructures based on ultra-thin SOI p. 97 A. Pouydebasque, L. Montes, J. Zimmermann, F. Balestra, D. Fraboulet, D. Mariolle, J. Gautier, F. Schopfer, V. Bouchiat and L. Saminadayar DOI: https://doi.org/10.1051/jp420020044 AbstractPDF (285.4 KB)
Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO2 films p. 103 K. Komiya, Y. Omura, T. Oka and M. Nagahara DOI: https://doi.org/10.1051/jp420020045 AbstractPDF (222.0 KB)
Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime p. 107 X. Jehl, M. Sanquer, G. Bertrand, G. Guégan and S. Deleonibus1 DOI: https://doi.org/10.1051/jp420020046 AbstractPDF (265.5 KB)
A relationship between 1/f noise and DC parameters in the pHEMT at 4.2 K p. 113 T. Lucas and Y. Jin DOI: https://doi.org/10.1051/jp420020047 AbstractPDF (201.2 KB)
DC and 1/f noise characterization of cryogenically cooled pseudomorphic HEMT's p. 117 G. Ferrante, F. Principato, A. Caddemi, N. Donato and G. Tuccari DOI: https://doi.org/10.1051/jp420020048 AbstractPDF (261.4 KB)
Investigations on the low-power and low-frequency noise performance of pHEMT at 4.2 K p. 121 T. Lucas and Y. Jin DOI: https://doi.org/10.1051/jp420020049 AbstractPDF (220.1 KB)
Cryogenic detector systems for materials analysis p. 127 J. Höhne, M. Bühler, F.V. Feilitzsch, J. Jochum, T. Hertrich, C. Hollerith, M. Huber, J. Nicolosi, K. Phelan, D. Redfern et al. (3 more) DOI: https://doi.org/10.1051/jp420020050 AbstractPDF (143.1 KB)
New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuits p. 129 J.-C. Villégier, N. Hadacek, C. Jorel, J.-L. Thomassin, V. Bouchiat, M. Faucher, P. Febvre, A. Rousy and G. Lamura DOI: https://doi.org/10.1051/jp420020051 AbstractPDF (403.7 KB)
Low- ramp-type Josephson junctions for SQUIDS p. 133 M. Podt, B.G.A. Rolink, J. Flokstra and H. Regalia DOI: https://doi.org/10.1051/jp420020052 AbstractPDF (298.6 KB)
Absolute high- superconducting radiometer with electrical-substitution for X-rays measurements p. 137 I.A. Khrebtov, A.D. Tkachenko, K.V. Ivanov, A.D. Nikolenko and V.F. Pindyurin DOI: https://doi.org/10.1051/jp420020053 AbstractPDF (291.9 KB)
High-Tc superconducting microbolometer for terahertz applications p. 141 C. Ulysse, A. Gaugue, A. Adam, A.J. Kreisler, J.-C. Villégier and J.-L. Thomassin DOI: https://doi.org/10.1051/jp420020054 AbstractPDF (274.1 KB)
Tantalum superconducting tunnel junctions for photon counting detectors p. 145 C. Jorel, P. Feautrier, J.-C. Villégier and A. Benoit DOI: https://doi.org/10.1051/jp420020055 AbstractPDF (277.9 KB)
Interaction of super high frequency radiation with superconducting Bi(Pb)-Sr-Ca-Cu-O thin-film structures p. 149 V.D. Bondar, M.Ya. Vasyliv, V.M. Davydov, R.V. Lutsiv, O.D. Pustylnik and O.A. Khymenko DOI: https://doi.org/10.1051/jp420020056 AbstractPDF (226.8 KB)
RSFQ: The fastest digital technology p. 155 K.K. Likharev DOI: https://doi.org/10.1051/jp420020057 AbstractPDF (48.48 KB)
A 20-GHz FLUX-1 superconductor RSFQ microprocessor p. 157 M. Dorojevets DOI: https://doi.org/10.1051/jp420020058 AbstractPDF (350.3 KB)
Design and characterization of 225-370 GHz DSB and 247-360 GHz SSB full height waveguide SIS mixers p. 161 B. Lazareff, D. Billon-Pierron, A. Navarrini and I. Péron DOI: https://doi.org/10.1051/jp420020059 AbstractPDF (293.8 KB)
Non-linear two-frequency analysis of SIS mixers through harmonic balance p. 165 S. Withington, P. Kittara and G. Yassin DOI: https://doi.org/10.1051/jp420020060 AbstractPDF (250.6 KB)
Investigation of radiation hardness of SIS junctions for space borne radio astronomy p. 169 I. Péron, G. Faury, Y. Delorme, F. Dauplay, B. Lecomte, M. Salez and K.-F. Schuster DOI: https://doi.org/10.1051/jp420020061 AbstractPDF (225.8 KB)
Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon p. 175 G. Leroy, J. Gest, P. Tabourier, J.-C. Carru, P. Xavier, E. André1 and J. Chaussy DOI: https://doi.org/10.1051/jp420020062 AbstractPDF (205.5 KB)
Integrated niobium thin film air bridges as variable capacitors for GHz tuning circuits p. 179 M. Schicke and K.-F. Schuster DOI: https://doi.org/10.1051/jp420020063 AbstractPDF (273 KB)
Low frequency noise in YBaCuO superconducting thin films deposited on MgO p. 183 G. Leroy, J. Gest, P. Tabourier, J.-C. Carru, A.F. Dégardin and A.J. Kreisler DOI: https://doi.org/10.1051/jp420020064 AbstractPDF (206.2 KB)
Complete microwave characterization at 36 GHz of YBaCuO thin films deposited on MgO substrates. Influence of the substrate preparation p. 187 M. Achani, N. Bourzgui, J.-C. Carru, A.F. Dégardin, A. Gensbittel1 and A.J. Kreisler DOI: https://doi.org/10.1051/jp420020065 AbstractPDF (187.8 KB)
Superconducting cameras for optical astronomy p. 193 D.D.E. Martin, P.Verhoeve, J.H.J. de Bruijne, A.P. Reynolds, A. Van Dordrecht, J. Verveer, J. Page, N. Rando and A. Peacock DOI: https://doi.org/10.1051/jp420020066 AbstractPDF (616.4 KB)
A 4.2 K readout channel in a standard 0.7 μm CMOS process for a photoconductor array camera p. 203 Y. Creten, O. Charlier, P. Merken, J. Putzeys and C. Van Hoof DOI: https://doi.org/10.1051/jp420020067 AbstractPDF (154.5 KB)
Electronics for deep space cryogenic applications p. 207 R.L. Patterson, A. Hammoud, J.E. Dickman, S. Gerber, M. Elbuluk and E. Overton DOI: https://doi.org/10.1051/jp420020068 AbstractPDF (245.7 KB)
Demonstration of an 4.2 K analog switch matrix in a standard 0.7 μ CMOS process p. 211 Y. Creten, J. De Hert, O. Charliert, P. Merken, J. Putzeys and C. Van Hoof DOI: https://doi.org/10.1051/jp420020069 AbstractPDF (95.19 KB)
ramp-type Josephson junctions for SQUIDS