Journal de Physique IV

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Foreword

Foreword p. V

Dimitris Davazoglou et Constantin Vahlas

Résumé

Molecular ways to nanoscale particles and films p. 1

H. Shen et S. Mathur

DOI: https://doi.org/10.1051/jp4:20020070

Real time monitoring of the growth of metallic thin films by in situ pyrometry p. 9

C. Gasqueres, F. Maury et F. Ossola

DOI: https://doi.org/10.1051/jp4:20020071

Preliminary studies of atmospheric pressure plasma enhanced CVD (AP-PECVD) of thin oxide films p. 17

N. McSporran, M.L. Hitchman, S.E. Alexandrov, S.H. Shamlian, S. Turnbull et S. Turnbull

DOI: https://doi.org/10.1051/jp4:20020072

Reflectance anisotropy studies of the oxidation of (001) GaAs surfaces in an MOCVD reactor p. 25

M.N. Simcock, L. He et M.E. Pemble

DOI: https://doi.org/10.1051/jp4:20020073

Controlled-growth of platinum nanoparticles on carbon nanotubes or nanospheres by MOCVD in fluidized bed reactor p. 29

P. Serp, R. Feurer, J.L. Faria et J.L. Figueiredo

DOI: https://doi.org/10.1051/jp4:20020074

Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, 0₃, TMB, TMP_I: Determination of a chemical mechanism p. 37

J.-P. Nieto, B. Caussat, J.-P. Couderc, I. Orain' et L. Jeannerot

DOI: https://doi.org/10.1051/jp4:20020075

Design, synthesis, and application of new Ti precursors compatible with Ba and Sr precursors for BST thin film by MOCVD p. 45

K. Woo

DOI: https://doi.org/10.1051/jp4:20020076

Simulation and validation of SiO₂ LPCVD from TEOS in a vertical 300 mm multi-wafer reactor p. 51

G.J. Schoof, C.R. Kleijn, H.E.A. Van Den Akker, T.G.M. Oosterlaken, H.J.C.M. Terhorst et F. Huussen

DOI: https://doi.org/10.1051/jp4:20020077

Advances in the use of MOCVD methods for the production of novel photonic bandgap materials p. 63

D.E. Whitehead, M.E. Pemble, H.M. Yates, A. Blanco, C. Lopez, H. Miguez et F.J. Meseguer

DOI: https://doi.org/10.1051/jp4:20020078

Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization p. 69

A. Levesque, A. Bouteville, H. de Baynast et B. Laveissière

DOI: https://doi.org/10.1051/jp4:20020079

Molecular beam mass spectrometry analysis of gaseous species responsible for diamond deposition in microwave plasmas p. 75

O. Aubry, J.-L. Delfau, C. Met, M.I. De Barros, L. Vandenbulcke et C. Vovelle

DOI: https://doi.org/10.1051/jp4:20020080

A study by GC-MS of the decomposition of precursors for the MOCVD of high temperature superconductors p. 85

O.V. Lopaeva, M.L. Hitchman, S.H. Shamlian et D.R. Watson

DOI: https://doi.org/10.1051/jp4:20020081

Growth of carbon nanotubes by fluidized bed catalytic chemical vapor deposition p. 93

D. Venegoni, P. Serp, R. Feurer, Y. Kihn, C. Vahlas et P. Kalck

DOI: https://doi.org/10.1051/jp4:20020082

Vapor-phase synthesis and characterization of ZnSe nanoparticles p. 99

D. Sarigiannis, R.P. Pawlowski, J.D. Peck, T.J. Mountziaris, G. Kioseoglou et A. Petrou

DOI: https://doi.org/10.1051/jp4:20020083

Modification of multiwalled carbon nanotubes by different breaking processes p. 107

I. Vesselényi, A. Siska, D. Méhn, K. Niesz, Z. Konya, J.B. Nagy et I. Kiricsi

DOI: https://doi.org/10.1051/jp4:20020084

Unveiling the magic of H₂S on the CVD-Al₂O₃ coating. Effect of H₂S on the water gas concentration p. 113

T. Oshika, M. Sato et A. Nishiyama

DOI: https://doi.org/10.1051/jp4:20020085

Multi-model hierarchy approach to simulate barrel reactors for epitaxial silicon deposition p. 121

M. Di Stanislao, G. Valente, S. Fascella, C. Spampinato, M. Masi et S. Carrà

DOI: https://doi.org/10.1051/jp4:20020086

Hydrogen storage in carbon nanotubes produced by CVD p. 129

A. Fonseca, N. Pierard, S. Tollis, G. Bister, Z. Konya, N. Nagaraju et J.B. Nagy

DOI: https://doi.org/10.1051/jp4:20020087

MOCVD of aluminium oxide films using aluminium β-diketonates as precursors p. 139

A. Devi, S.A. Shivashankar et A.G. Samuelson

DOI: https://doi.org/10.1051/jp4:20020088

Conductive Cu-TiO2 thin films obtained via MOCVD p. 147

F. Alvarez y Quintavalle, G.A. Battiston, U. Casellato, D. Fregona, R. Gerbasi et F. Loro

DOI: https://doi.org/10.1051/jp4:20020089

Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature p. 155

M.G. Park, W.S. Choi, J.-H. Boo, Y.T. Kim, D.H. Yoon et B. Hong

DOI: https://doi.org/10.1051/jp4:20020090

Journal de Physique IV (Proceedings)

Volume 12 / Numéro 4 (June 2002)

Foreword p. V

Molecular ways to nanoscale particles and films p. 1

Real time monitoring of the growth of metallic thin films by in situ pyrometry p. 9

Preliminary studies of atmospheric pressure plasma enhanced CVD (AP-PECVD) of thin oxide films p. 17

Reflectance anisotropy studies of the oxidation of (001) GaAs surfaces in an MOCVD reactor p. 25

Controlled-growth of platinum nanoparticles on carbon nanotubes or nanospheres by MOCVD in fluidized bed reactor p. 29

Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, 0₃, TMB, TMP_I: Determination of a chemical mechanism p. 37

Design, synthesis, and application of new Ti precursors compatible with Ba and Sr precursors for BST thin film by MOCVD p. 45

Simulation and validation of SiO₂ LPCVD from TEOS in a vertical 300 mm multi-wafer reactor p. 51

Advances in the use of MOCVD methods for the production of novel photonic bandgap materials p. 63

Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization p. 69

Molecular beam mass spectrometry analysis of gaseous species responsible for diamond deposition in microwave plasmas p. 75

A study by GC-MS of the decomposition of precursors for the MOCVD of high temperature superconductors p. 85

Growth of carbon nanotubes by fluidized bed catalytic chemical vapor deposition p. 93

Vapor-phase synthesis and characterization of ZnSe nanoparticles p. 99

Modification of multiwalled carbon nanotubes by different breaking processes p. 107

Unveiling the magic of H₂S on the CVD-Al₂O₃ coating. Effect of H₂S on the water gas concentration p. 113

Multi-model hierarchy approach to simulate barrel reactors for epitaxial silicon deposition p. 121

Hydrogen storage in carbon nanotubes produced by CVD p. 129

MOCVD of aluminium oxide films using aluminium β-diketonates as precursors p. 139

Conductive Cu-TiO2 thin films obtained via MOCVD p. 147

Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature p. 155

Journal de Physique IV (Proceedings)

Volume 12 / Numéro 4 (June 2002)

Foreword p. V

Molecular ways to nanoscale particles and films p. 1

Real time monitoring of the growth of metallic thin films by in situ pyrometry p. 9

Preliminary studies of atmospheric pressure plasma enhanced CVD (AP-PECVD) of thin oxide films p. 17

Reflectance anisotropy studies of the oxidation of (001) GaAs surfaces in an MOCVD reactor p. 25

Controlled-growth of platinum nanoparticles on carbon nanotubes or nanospheres by MOCVD in fluidized bed reactor p. 29

Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, 03, TMB, TMPI: Determination of a chemical mechanism p. 37

Design, synthesis, and application of new Ti precursors compatible with Ba and Sr precursors for BST thin film by MOCVD p. 45

Simulation and validation of SiO2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor p. 51

Advances in the use of MOCVD methods for the production of novel photonic bandgap materials p. 63

Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization p. 69

Molecular beam mass spectrometry analysis of gaseous species responsible for diamond deposition in microwave plasmas p. 75

A study by GC-MS of the decomposition of precursors for the MOCVD of high temperature superconductors p. 85

Growth of carbon nanotubes by fluidized bed catalytic chemical vapor deposition p. 93

Vapor-phase synthesis and characterization of ZnSe nanoparticles p. 99

Modification of multiwalled carbon nanotubes by different breaking processes p. 107

Unveiling the magic of H2S on the CVD-Al2O3 coating. Effect of H2S on the water gas concentration p. 113

Multi-model hierarchy approach to simulate barrel reactors for epitaxial silicon deposition p. 121

Hydrogen storage in carbon nanotubes produced by CVD p. 129

MOCVD of aluminium oxide films using aluminium β-diketonates as precursors p. 139

Conductive Cu-TiO2 thin films obtained via MOCVD p. 147

Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature p. 155

Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, 0₃, TMB, TMP_I: Determination of a chemical mechanism p. 37

Simulation and validation of SiO₂ LPCVD from TEOS in a vertical 300 mm multi-wafer reactor p. 51

Unveiling the magic of H₂S on the CVD-Al₂O₃ coating. Effect of H₂S on the water gas concentration p. 113