Molecular ways to nanoscale particles and films p. 1 H. Shen et S. Mathur DOI: https://doi.org/10.1051/jp4:20020070 PDF (729.7 KB)
Real time monitoring of the growth of metallic thin films by in situ pyrometry p. 9 C. Gasqueres, F. Maury et F. Ossola DOI: https://doi.org/10.1051/jp4:20020071 PDF (462.8 KB)
Preliminary studies of atmospheric pressure plasma enhanced CVD (AP-PECVD) of thin oxide films p. 17 N. McSporran, M.L. Hitchman, S.E. Alexandrov, S.H. Shamlian, S. Turnbull et S. Turnbull DOI: https://doi.org/10.1051/jp4:20020072 PDF (430.2 KB)
Reflectance anisotropy studies of the oxidation of (001) GaAs surfaces in an MOCVD reactor p. 25 M.N. Simcock, L. He et M.E. Pemble DOI: https://doi.org/10.1051/jp4:20020073 PDF (262.6 KB)
Controlled-growth of platinum nanoparticles on carbon nanotubes or nanospheres by MOCVD in fluidized bed reactor p. 29 P. Serp, R. Feurer, J.L. Faria et J.L. Figueiredo DOI: https://doi.org/10.1051/jp4:20020074 PDF (1.604 MB)
Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, 03, TMB, TMPI: Determination of a chemical mechanism p. 37 J.-P. Nieto, B. Caussat, J.-P. Couderc, I. Orain' et L. Jeannerot DOI: https://doi.org/10.1051/jp4:20020075 PDF (454.6 KB)
Design, synthesis, and application of new Ti precursors compatible with Ba and Sr precursors for BST thin film by MOCVD p. 45 K. Woo DOI: https://doi.org/10.1051/jp4:20020076 PDF (444.5 KB)
Simulation and validation of SiO2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor p. 51 G.J. Schoof, C.R. Kleijn, H.E.A. Van Den Akker, T.G.M. Oosterlaken, H.J.C.M. Terhorst et F. Huussen DOI: https://doi.org/10.1051/jp4:20020077 PDF (606.4 KB)
Advances in the use of MOCVD methods for the production of novel photonic bandgap materials p. 63 D.E. Whitehead, M.E. Pemble, H.M. Yates, A. Blanco, C. Lopez, H. Miguez et F.J. Meseguer DOI: https://doi.org/10.1051/jp4:20020078 PDF (528.0 KB)
Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization p. 69 A. Levesque, A. Bouteville, H. de Baynast et B. Laveissière DOI: https://doi.org/10.1051/jp4:20020079 PDF (687.3 KB)
Molecular beam mass spectrometry analysis of gaseous species responsible for diamond deposition in microwave plasmas p. 75 O. Aubry, J.-L. Delfau, C. Met, M.I. De Barros, L. Vandenbulcke et C. Vovelle DOI: https://doi.org/10.1051/jp4:20020080 PDF (638.0 KB)
A study by GC-MS of the decomposition of precursors for the MOCVD of high temperature superconductors p. 85 O.V. Lopaeva, M.L. Hitchman, S.H. Shamlian et D.R. Watson DOI: https://doi.org/10.1051/jp4:20020081 PDF (470.7 KB)
Growth of carbon nanotubes by fluidized bed catalytic chemical vapor deposition p. 93 D. Venegoni, P. Serp, R. Feurer, Y. Kihn, C. Vahlas et P. Kalck DOI: https://doi.org/10.1051/jp4:20020082 PDF (811.1 KB)
Vapor-phase synthesis and characterization of ZnSe nanoparticles p. 99 D. Sarigiannis, R.P. Pawlowski, J.D. Peck, T.J. Mountziaris, G. Kioseoglou et A. Petrou DOI: https://doi.org/10.1051/jp4:20020083 PDF (685.3 KB)
Modification of multiwalled carbon nanotubes by different breaking processes p. 107 I. Vesselényi, A. Siska, D. Méhn, K. Niesz, Z. Konya, J.B. Nagy et I. Kiricsi DOI: https://doi.org/10.1051/jp4:20020084 PDF (498.6 KB)
Unveiling the magic of H2S on the CVD-Al2O3 coating. Effect of H2S on the water gas concentration p. 113 T. Oshika, M. Sato et A. Nishiyama DOI: https://doi.org/10.1051/jp4:20020085 PDF (502.3 KB)
Multi-model hierarchy approach to simulate barrel reactors for epitaxial silicon deposition p. 121 M. Di Stanislao, G. Valente, S. Fascella, C. Spampinato, M. Masi et S. Carrà DOI: https://doi.org/10.1051/jp4:20020086 PDF (579.2 KB)
Hydrogen storage in carbon nanotubes produced by CVD p. 129 A. Fonseca, N. Pierard, S. Tollis, G. Bister, Z. Konya, N. Nagaraju et J.B. Nagy DOI: https://doi.org/10.1051/jp4:20020087 PDF (649.4 KB)
MOCVD of aluminium oxide films using aluminium β-diketonates as precursors p. 139 A. Devi, S.A. Shivashankar et A.G. Samuelson DOI: https://doi.org/10.1051/jp4:20020088 PDF (728.8 KB)
Conductive Cu-TiO2 thin films obtained via MOCVD p. 147 F. Alvarez y Quintavalle, G.A. Battiston, U. Casellato, D. Fregona, R. Gerbasi et F. Loro DOI: https://doi.org/10.1051/jp4:20020089 PDF (636.6 KB)
Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature p. 155 M.G. Park, W.S. Choi, J.-H. Boo, Y.T. Kim, D.H. Yoon et B. Hong DOI: https://doi.org/10.1051/jp4:20020090 PDF (329.4 KB)
