| Numéro |
J. Phys. IV France
Volume 12, Numéro 4, June 2002
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|---|---|---|
| Page(s) | 51 - 61 | |
| DOI | https://doi.org/10.1051/jp4:20020077 | |
J. Phys. IV France 12 (2002) Pr4-51
DOI: 10.1051/jp4:20020077
Simulation and validation of SiO 2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor
G.J. Schoof1, C.R. Kleijn1, H.E.A. Van Den Akker1, T.G.M. Oosterlaken2, H.J.C.M. Terhorst2 and F. Huussen21 Delft University of Technology, Kramers Laboratorium voor Fysische Technologie, Prins Bernhardlaan 6, 2628 Delft, The Netherlands
2 ASM International, Jan van Eycklaan 10, 3723 Bilthoven, The Netherlands
Abstract
Combining a slightly modified version of the chemical reaction mechanism for silicon-dioxide LPCVD from TEOS as proposed by
Coltrin and coworkers, and the commercially available CFD program CFD-ACE+, a 21) model has been derived for gas flow, transport
phenomena and deposition chemistry in the ASM A412 vertical 300mm multiwafer reactor.
Silicon-dioxide deposition from TEOS is strongly influenced by gas-phase reactions, producing a reactive intermediate that
is responsible for the majority of deposition. This phenomenon underlines the importance of the chemistry model in simulations.
As a result of the gas phase intermediate, strong radial non-uniformities are observed. The simulation results have been validated
against experimental growth rate data for various process conditions.
© EDP Sciences 2002