| Issue |
J. Phys. IV France
Volume 12, Number 4, June 2002
|
|
|---|---|---|
| Page(s) | 139 - 146 | |
| DOI | https://doi.org/10.1051/jp4:20020088 | |
J. Phys. IV France 12 (2002) Pr4-139
DOI: 10.1051/jp4:20020088
MOCVD of aluminium oxide films using aluminium
-diketonates
as precursors
A. Devi, S.A. Shivashankar and A.G. Samuelson Lehrstuhl fürAnorganische Chemie ll, Organometallics and Materials Chemistry, Ruhr-Universität Bochum, 44780 Bochum, Germany
Abstract
Deposition of Al
20
3 coatings by CVD is of importance because they are often used as abrading material in cemented carbide cutting tools. The
conventionally used CVD process for Al
20
3 involves the corrosive reactant
AICl
3. In this paper, we report on the thermal characterisation of the metalorganic precursors namely aluminium tris-tetramethyl-heptanedionate
[ Al(thd)
3] and aluminium tris-acetylacetonate [ Al(acac)
3] and their application to the
CVD of Al
20
3 films. Crystalline A1203 films were deposited by MOCVD at low temperatures by the pyrolysis of
Al(thd)
3 and AI(acac)
3. The films were deposited on a TiN-coated tungsten carbide (TiN/WC) and Si(100) substrates
in the temperature range 500-1100 °C. The as-deposited films were characterised by x-ray diffraction, optical
microscopy, scanning and transmission electron microscopy, Auger electron spectroscopy. The observed crystallinity
of films grown at low temperatures, their microstructure, and composition may be interpreted in terms of a growth
process that involves the melting of the metalorganic precursor on the hot growth surface.
© EDP Sciences 2002