| Issue |
J. Phys. IV France
Volume 12, Number 4, June 2002
|
|
|---|---|---|
| Page(s) | 147 - 153 | |
| DOI | https://doi.org/10.1051/jp4:20020089 | |
J. Phys. IV France 12 (2002) Pr4-147
DOI: 10.1051/jp4:20020089
Conductive Cu-TiO2 thin films obtained via MOCVD
F. Alvarez y Quintavalle1, G.A. Battiston1, U. Casellato1, D. Fregona2, R. Gerbasi1 and F. Loro11 Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati del CNR, Corso Stati Uniti 4, 35127 Padova, Italy
2 Dipartimento di Chimica Inorganica, Metallorganica ed Analitica, Università di Padova, via Marzolo 1, 35131 Padova, Italy
Abstract
Growths of nanophased Cu, CuO, Cu-TiO2 and Cu
2O-TiO
2 thin films were performed by using titanium
tetraisopropoxide Ti(OiPr)
4, and copper(II)acetylacetonatehydrate Cu(acac)
2.H
2O in the temperature range 275-
370 °C. The composite Cu-TiO
2 with very low percent of titanium dioxide (TiO
2<5%) can be an alternative
procedure to obtain well adherent, smooth and well connected Cu films. Cu
2O-TiO
2 were obtained by annealing of
Cu-TiO
2 thin films. Cu
2O in a TiO
2 matrix remains unaltered after repeated thermal treatments when the Cu:Ti metal
ratio is equal or less than 15:1. The films exhibited semiconductor characteristics with a moderate transparency, 40-60% in
the visible region.
© EDP Sciences 2002