Journal de Physique IV

Effects of constrained geometries and fast access times in real ferroelectric memory devices p. Pr9-3

J.F. Scott et A.J. Hartmann

DOI: https://doi.org/10.1051/jp4:1998901

Relationship between precursor chemistry and microstructure of CSD derived PZT films p. Pr9-17

M. Kosec et B. Malic

DOI: https://doi.org/10.1051/jp4:1998902

Processing of porous lead titanate and lead zirconate titanate coatings p. Pr9-27

J.S. Wright et L.F. Francis

DOI: https://doi.org/10.1051/jp4:1998903

Characterization method of the valence states : Application to dielectrics and metal-dielectrics interfaces p. Pr9-33

P. Jonnard

DOI: https://doi.org/10.1051/jp4:1998904

Ruthenium oxide electrodes prepared by sol-gel spin-coating p. Pr9-45

J.H. Yi, P. Thomas, M. Manier et J.P. Mercurio

DOI: https://doi.org/10.1051/jp4:1998905

Influence of processing parameters on characteristics of sol-gel derived PLZT thin films p. Pr9-49

B. Malic, N. Setter, K. Brooks, M. Kosec et G. Drazic

DOI: https://doi.org/10.1051/jp4:1998906

Ferroelectric improvements of (Pb,Ca)TiO₃ thin films p. Pr9-53

M.L. Calzada, R. Jimenez, P. Ramos, M.J. Martin et J. Mendiola

DOI: https://doi.org/10.1051/jp4:1998907

Low temperature sol gel synthesis of PST thin films p. Pr9-57

T. Takeishi et R.W. Whatmore

DOI: https://doi.org/10.1051/jp4:1998908

Influence of processing parameters on dielectric properties of PZT thin films on steel substrates p. Pr9-61

S. Seifert, P. Löbmann et D. Sporn

DOI: https://doi.org/10.1051/jp4:1998909

Formation of a sol-gel derived Pb(Zr,Ti)O₃ thin-film capacitor with polycrystalline SrRuO₃ electrodes p. Pr9-65

K. Aoki et Y. Fukuda

DOI: https://doi.org/10.1051/jp4:1998910

Photosensitive sol-gel precursors for direct ultra-violet patterning of SiO₂ and PZT materials p. Pr9-69

S.P. Faure, O. Chaux et P. Gaucher

DOI: https://doi.org/10.1051/jp4:1998911

Preparation and properties of Ba_1-xSr_xTiO₃ thin films deposited by the sol-gel technique p. Pr9-73

E. Dien, R. Verveur, M. Lejeune et A. Smith

DOI: https://doi.org/10.1051/jp4:1998912

Low temperature formation of sol-gel derived ferroelectric lead zirconate titanate (Pb(Zr_xTi_1-x)O₃, x = 0.3) thin films p. Pr9-79

Q. Zhang, R.W. Whatmore, Z. Huang et M.E. Vickers

DOI: https://doi.org/10.1051/jp4:1998913

Sol-gel processing of bismuth strontium tantalate thin films p. Pr9-83

E.P. Turevskaya, K.A. Vorotilov, V.B. Bergo, S.V. Sokolov, A.S. Sigov et D. Benlian

DOI: https://doi.org/10.1051/jp4:1998914

Slow relaxation of the polarization in pulsed laser ablated highly oriented ferroelectric thin films p. Pr9-89

C. Björmander, J. Wittborn, K.V. Rao et E. Dan Dahlberg

DOI: https://doi.org/10.1051/jp4:1998915

Photoelectric effects in chemical solution deposited Bi₄Ti₃O₁₂ thin films p. Pr9-101

L. Pintilie, M. Alexe, A. Pignolet et D. Hesse

DOI: https://doi.org/10.1051/jp4:1998916

Anomalous elastic and dielectric behavior in nanocrystalline Ca-modified lead titanate (PTC) films p. Pr9-105

C. Ziebert, J.K. Krüger, R. Birringer, H. Schmitt et B. Jiménez

DOI: https://doi.org/10.1051/jp4:1998917

Asymmetric properties of Pb(Zr,Ti)O₃ thin film capacitors with conducting oxides p. Pr9-109

C.H. Choi et J. Lee

DOI: https://doi.org/10.1051/jp4:1998918

Microwave dielectric characterization of bulk ferroelectrics p. Pr9-113

C.M. Weil, R.G. Geyer et L. Sengupta

DOI: https://doi.org/10.1051/jp4:1998919

Dielectric relaxation phenomena in superparaelectric and ferroelectric ceramic thin films and the relevance with respect to high density DRAM and FRAM applications p. Pr9-117

M. Schumacher, S. Manetta et R. Waser

DOI: https://doi.org/10.1051/jp4:1998920

Characterization of microstructural and piezoelectric properties of oriented PZT thin films obtained by pulsed laser deposition p. Pr9-121

P. Verardi, M. Dinescu et F. Craciun

DOI: https://doi.org/10.1051/jp4:1998921

Elastic and relaxor behavior in nanocrystalline La-modified PZT-films p. Pr9-125

M. Marx, J.K. Krüger, R. Birringer, H. Schmitt, R. Holtwick et P. Huber

DOI: https://doi.org/10.1051/jp4:1998922

Uncooled pyroelectric infrared 128 x 128 imaging sensor p. Pr9-131

J.-L. Coutures, J. Leconte et G. Boucharlat

DOI: https://doi.org/10.1051/jp4:1998923

PT/P(VDF-TrFE) 0-3 nanocomposite thin film pyroelectric sensors p. Pr9-139

Y. Chen, J. Li, H.L.W. Chan, C.L. Choy et K.Y. Tong

DOI: https://doi.org/10.1051/jp4:1998924

Epitaxial growth and electrical properties of PCLT thin films for IR detector sensor p. Pr9-143

L. Zheng, A.M. Grishin et K.V. Rao

DOI: https://doi.org/10.1051/jp4:1998925

Integrated ferroelectric polymer pyroelectric sensors : A comparative study of PVDF and its copolymer VDF/TrFE film p. Pr9-147

D. Setiadi, T.D. Binnie, A. Armitage, K. Benjamin et H. Weller

DOI: https://doi.org/10.1051/jp4:1998926

Sputtered ferroelectric PZT thin films in pyroelectric infrared sensors p. Pr9-151

P. Padmini, R. Köhler, G. Gerlach, R. Bruchhaus et G. Hofmann

DOI: https://doi.org/10.1051/jp4:1998927

Pyroelectric properties of sol-gel processed lanthanum modified lead titanate ferroelectric thin films p. Pr9-155

M. Algueró, M.L. Calzada et L. Pardo

DOI: https://doi.org/10.1051/jp4:1998928

Report on Brite-EuRam Project Sensors and Mechatronic Devices using Ferroelectric Thin Films SEMDEFT p. Pr9-161

P.B. Kirby, R.V. Wright, P. Gaucher, P. Galtier, L. Kofoed, J.O. Gulløv, W. Von Munch, D. Eichner, B. Ploss et J.K. Kruger

DOI: https://doi.org/10.1051/jp4:1998929

Electromechanical characterization and modelling of piezoelectric thick films p. Pr9-171

S. Ledren, P. Gonnard, L. Lebrun et M. Troccaz

DOI: https://doi.org/10.1051/jp4:1998930

An ultrasonic motor with an integrated position sensor p. Pr9-175

F. Trigui, J.J. Bezard, J. Oksman et Y. Tanguy

DOI: https://doi.org/10.1051/jp4:1998931

Lead titanate coatings on optical fibers deposited by reactive magnetron sputtering p. Pr9-179

C.A.P. Muller et G.R. Fox

DOI: https://doi.org/10.1051/jp4:1998932

Piezoelectric response of pulsed laser deposited heterostructures PZT/YBCO, PLZT/YBCO p. Pr9-183

M. Tyunina, A. Sternberg, V. Zauls, M. Kundzinsh et I. Shorubalko

DOI: https://doi.org/10.1051/jp4:1998933

Ferroelectric PZT/Si structure for integrated sensor applications p. Pr9-187

P. Verardi, M. Dinescu, F. Craciun et M. Carpentieri

DOI: https://doi.org/10.1051/jp4:1998934

Super high electromechanical coupling and zero-temperature coefficient surface acoustic wave substrates in KNbO₃ single crystal p. Pr9-191

K. Yamanouchi, H. Odagawa, T. Kojima et T. Matsumura

DOI: https://doi.org/10.1051/jp4:1998935

Calcium modified lead titanate thin films for electromechanical applications p. Pr9-195

A.L. Kholkin et M.L. Calzada

DOI: https://doi.org/10.1051/jp4:1998936

Nanoscale domain switching and 3-dimensional mapping of ferroelectric domains by scanning force microscopy p. Pr9-201

L.M. Eng, M. Abplanalp, P. Günter et H.-J. Güntherodt

DOI: https://doi.org/10.1051/jp4:1998937

Switching quality of thin-film PZT ferroelectric capacitors p. Pr9-205

D.J. Wouters, R. Nouwen, G.J. Norga, A. Bartic, L. Van Poucke et H.E. Maes

DOI: https://doi.org/10.1051/jp4:1998938

Ferroelectric properties and polarization fatigue of Bi-modified Pb(Zr,Ti)O₃ thin film p. Pr9-209

H.S. Lee et K.B. Lee

DOI: https://doi.org/10.1051/jp4:1998939

Growth of BST thin films on silicon substrates.Application to integrated capacitors for DC-DC converters p. Pr9-213

D. Chambonnet, C. Audry, A. Fages-Bonnery, C. Mer, C. Fages et J. Perrière

DOI: https://doi.org/10.1051/jp4:1998940

Influence of layer interface parameters on dielectric characteristics of BSTO ferroelectric film planar capacitors p. Pr9-217

A.I. Dedyk, S.F. Karmanenko, S. Leppavuori, V.I. Sakharov, A.A. Semenov, I.T. Serenkov, L.T. Ter-Martirosyan, A. Uusimak et F. Wang

DOI: https://doi.org/10.1051/jp4:1998941

Curie-Weiss law of (Ba_1-xSr_x)TiO₃ thin films prepared by chemical solution deposition p. Pr9-221

S. Hoffmann et R. Waser

DOI: https://doi.org/10.1051/jp4:1998942

SrBi₂Nb₂O₉ ferroelectric thin films p. Pr9-225

J.H. Yi, P. Thomas, M. Manier, J.P. Mercurio, I. Jauberteau et B. Frit

DOI: https://doi.org/10.1051/jp4:1998943

Effect of poling treatment on e₃₁ piezoelectric constant of sputtered PZT thin films p. Pr9-229

E. Cattan, A. Mollier, G. Velu et D. Remiens

DOI: https://doi.org/10.1051/jp4:1998944

Piezoelectric bimorph cantilever for actuating and sensing applications p. Pr9-235

P. Gaucher, D. Eichner, J. Hector et W. Von Munch

DOI: https://doi.org/10.1051/jp4:1998945

Direct wafer bonding : A new fabrication method for ferroelectric-silicon heterostructures p. Pr9-239

M. Alexe, R. Scholz, G. Kästner, A. Pignolet et U. Gösele

DOI: https://doi.org/10.1051/jp4:1998946

Influence of PbTiO₃ buffer layer on structural and electrical properties of Pb(Zr, Ti)O₃ films produced by sputter deposition technique p. Pr9-243

G. Vélu, B. Jaber, T. Haccart et D. Rèmiens

DOI: https://doi.org/10.1051/jp4:1998947

Microstructure of BaTiO₃ and SrTiO₃ layers obtained by injection MOCVD p. Pr9-247

J. Lindner, F. Weiss, J.-P. Sénateur, B. Ploss, L. Hubert-Pfalzgraf et S. Daniele

DOI: https://doi.org/10.1051/jp4:1998948

Large area pulsed laser deposited ferroelectric thin films of epitaxial Bi-layered perovskites on silicon p. Pr9-251

A. Pignolet, C. Curran, S. Welke, M. Alexe, S. Senz, D. Hesse et U. Gösele

DOI: https://doi.org/10.1051/jp4:1998949

Electrical properties of ferroelectric SrBi₂Ta₂O₉ thin films deposited on MOCVD-Pt/SiO₂/Si substrates by plasma-enhanced metalorganic chemical vapor deposition p. Pr9-255

N.-J. Seong et S.-G. Yoon

DOI: https://doi.org/10.1051/jp4:1998950

Pulsed laser deposition of relaxor ferroelectric films p. Pr9-261

M. Tyunina, J. Levoska, A. Sternberg, V. Zauls, M. Kundzinsh, I. Shorubalko et S. Leppavuori

DOI: https://doi.org/10.1051/jp4:1998951

Electrical properties of ferroelectric PZT films irradiated by oxygen ions p. Pr9-265

L. Zheng, C. Lin et K.V. Rao

DOI: https://doi.org/10.1051/jp4:1998952

Process and characterization of (Pb,La)TiO₃ thin films deposited by MOCVD for gigabit DRAM application p. Pr9-269

S.-S. Lee, Y.-M. Kang, J. Lee, D.-H. Lee et H.-G. Kim

DOI: https://doi.org/10.1051/jp4:1998953

Granularity effects on the magnetic and electrical properties of La(Ca,Sr)MnO₃ thin films p. Pr9-273

C. Mitze, U. Hasenkox, R.R. Arons et R. Waser

DOI: https://doi.org/10.1051/jp4:1998954

PbTiO₃ epitaxial thin films as optical waveguides p. Pr9-277

E. Dogheche, B. Jaber, X. Lansiaux et D. Rèmiens

DOI: https://doi.org/10.1051/jp4:1998955

Le Journal de Physique IV

Volume 08 / Numéro PR9 (December 1998)

2nd European Meeting on Integrated FerroelectricsEMIF 2