| Numéro |
J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated FerroelectricsEMIF 2 |
|
|---|---|---|
| Page(s) | Pr9-121 - Pr9-124 | |
| DOI | https://doi.org/10.1051/jp4:1998921 | |
2nd European Meeting on Integrated Ferroelectrics
EMIF 2
J. Phys. IV France 08 (1998) Pr9-121-Pr9-124
DOI: 10.1051/jp4:1998921
1 CNR-Istituto di Acustica "O.M. Corbino", Area di Ricerca Tor Vergata, via del Fosso del Cavaliere 100, 00133 Roma, Italy
2 Institute of Atomic Physics, NILPRP, P.O. Box MG16, 76900 Bucharest-Magurele, Romania
© EDP Sciences 1998
EMIF 2
J. Phys. IV France 08 (1998) Pr9-121-Pr9-124
DOI: 10.1051/jp4:1998921
Characterization of microstructural and piezoelectric properties of oriented PZT thin films obtained by pulsed laser deposition
P. Verardi1, M. Dinescu2 and F. Craciun11 CNR-Istituto di Acustica "O.M. Corbino", Area di Ricerca Tor Vergata, via del Fosso del Cavaliere 100, 00133 Roma, Italy
2 Institute of Atomic Physics, NILPRP, P.O. Box MG16, 76900 Bucharest-Magurele, Romania
Abstract
The growing of oriented crystalline PZT films on silicon substrates at low substrate temperatures is reported. By varying the laser fluency and other deposition parameters we have been able to produce by a single step process highly oriented PZT films with good piezoelectric properties at much lower temperatures than reported in other PLD experiments. Film microstrutural and compositional characterization as well as piezoelectric measurements are presented and discussed.
© EDP Sciences 1998