Numéro
J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
EMIF 2
Page(s) Pr9-171 - Pr9-174
DOI https://doi.org/10.1051/jp4:1998930
2nd European Meeting on Integrated Ferroelectrics
EMIF 2

J. Phys. IV France 08 (1998) Pr9-171-Pr9-174

DOI: 10.1051/jp4:1998930

Electromechanical characterization and modelling of piezoelectric thick films

S. Ledren, P. Gonnard, L. Lebrun and M. Troccaz

INSA, LGEF, bâtiment 504, 20 avenue A. Einstein, 69621 Villeurbanne cedex, France


Abstract
Polycrystalline Pb(ZrxTi1-x)O3 thick films have been prepared by spin-on and rapid sintering in a conventional oven. The remanent polarization and coercive field of a 80 µm thick film are studied versus the applied field. Modellings from the admittance curves and from a modified Mason circuit can explain that the weaker electromechanical characteristics of the PZT layer against the bulk material are due both to the porosity and to the existence of an inactive layer. A characterization by the beam method shows a good correlation between the theoretical and experimental resonance frequencies.



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