| Numéro |
J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated FerroelectricsEMIF 2 |
|
|---|---|---|
| Page(s) | Pr9-117 - Pr9-120 | |
| DOI | https://doi.org/10.1051/jp4:1998920 | |
2nd European Meeting on Integrated Ferroelectrics
EMIF 2
J. Phys. IV France 08 (1998) Pr9-117-Pr9-120
DOI: 10.1051/jp4:1998920
1 Institut für Werkstoffe der Elektrotechnik (IWE), RWTH Aachen University of Technology, 52056 Aachen, Germany
2 Laboratoire de Céramique, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
© EDP Sciences 1998
EMIF 2
J. Phys. IV France 08 (1998) Pr9-117-Pr9-120
DOI: 10.1051/jp4:1998920
Dielectric relaxation phenomena in superparaelectric and ferroelectric ceramic thin films and the relevance with respect to high density DRAM and FRAM applications
M. Schumacher1, S. Manetta2 and R. Waser11 Institut für Werkstoffe der Elektrotechnik (IWE), RWTH Aachen University of Technology, 52056 Aachen, Germany
2 Laboratoire de Céramique, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Abstract
Dielectric relaxation has been observed for a wide variety of materials. Especially for dielectric thin films a typical Curie -von Schweidler relaxation has been observed by rnany groups in the literature. Although some possible reasons for these relaxation phenomena have been discussed, a cornprehensive understanding of the physical origins involved could not be obtained by now. The purpose of this contribution is to present a wide range of experimental results collected on Pb(Zr,Ti)O3 (PZT) thin films. Results are cornpared to investigations on (Ba,Sr)TiO3 and SrTiO3 films.
© EDP Sciences 1998