Large area pulsed laser deposited ferroelectric thin films of epitaxial Bi-layered perovskites on silicon

Abstract
Ferroelectric thin films of Bi₄Ti₃O₁₂ and SrBi₂Ta₂O₉, have been deposited on substrates up to 3 inches in diameter by the so-called off-axis Pulsed Laser Deposition technique. In order to promote epitaxial growth, the Bi₄Ti₃O₁₂ and SrBi₂Ta₂O₉ thin films have been deposited onto epitaxial thin film templates of CeO₂/YSZ and on the conductive oxide (La_1-xSr_x)CoO₃ (LSCO) al1 deposited by off-axis PLD. The thickness and composition uniformity of the ferroelectric films, electrodes and buffer layers are important parameters with regard to their possible application. The thickness uniformities achieved are in the range of 5 % to 15% of the mean thickness.