Process and characterization of (Pb,La)TiO3 thin films deposited by MOCVD for gigabit DRAM application

S.-S. Lee; Y.-M. Kang; J. Lee; D.-H. Lee; H.-G. Kim

doi:doi:10.1051/jp4:1998953

Numéro		J. Phys. IV France Volume 08, Numéro PR9, December 1998 2^nd European Meeting on Integrated Ferroelectrics EMIF 2


Page(s)		Pr9-269 - Pr9-272
DOI		https://doi.org/10.1051/jp4:1998953

2^nd European Meeting on Integrated Ferroelectrics
EMIF 2

J. Phys. IV France 08 (1998) Pr9-269-Pr9-272
DOI: 10.1051/jp4:1998953

Process and characterization of (Pb,La)TiO₃ thin films deposited by MOCVD for gigabit DRAM application

S.-S. Lee¹, Y.-M. Kang¹, J. Lee¹, D.-H. Lee¹ and H.-G. Kim²

¹ Adv. Dev. & P. I. Dept.-1, Memory R&D Div., Hyundai Electronics Ind. Co., Ltd., San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do 467-701, Korea
² Department of Materials Science and Engineering, KAIST, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea

Abstract
La-modified lead titanate. (Pb. La)TiO₃, [PLT], thin films were deposited by low pressure metal organic chemical vapor deposition (MOCVD) on Pt/SiO2/Si substrates. The composition of the films was studied with various deposition conditions. Also, the electrical properties, such as the dielectric constant. the P-E hysteresis curve, and the leakage current density. were investigated with various annealing conditions. The experimental results show that the 180nm-thick PLT films with the La mole % of 12 are applicable as the planar capacitor laycr of 1 gigabit DRAM.