| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-181 - C6-186 | |
| DOI | https://doi.org/10.1051/jp4:1991627 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-181-C6-186
DOI: 10.1051/jp4:1991627
Institute of Microelectronics Technology and High Purity Materials, USSR Academy of Sciences, Chernogolovka, Moscow District 142432, USSR
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-181-C6-186
DOI: 10.1051/jp4:1991627
EBIC INVESTIGATIONS OF EXTENDED DEFECTS IN CdTe
G.N. PANIN and E.B. YAKIMOVInstitute of Microelectronics Technology and High Purity Materials, USSR Academy of Sciences, Chernogolovka, Moscow District 142432, USSR
Abstract
The EBIC and remote contact EBIC (REBIC) techniques have been used to reveal grain boundaries and precipitates in CdTe crystals and to study their recombination contrast as a function of the electron beam parameters and temperature. The results obtained are discussed taking into account the defect charge state and the recombination properties of their environment.
© EDP Sciences 1991