| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-131 - C6-136 | |
| DOI | https://doi.org/10.1051/jp4:1991621 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-131-C6-136
DOI: 10.1051/jp4:1991621
1 Institut für physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart, Germany
2 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Germany
3 Universität Konstanz, Fakustät für Physik, Postfach 5560, D-7750 Konstanz, Germany
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-131-C6-136
DOI: 10.1051/jp4:1991621
DIFFUSION LENGTH MEASUREMENTS OF HETEROJUNCTION THIN FILMS BY JUNCTION-EBIC
G. JÄGER-WALDAU1, 2, D. SCHMID1 and A. JÄGER-WALDAU31 Institut für physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart, Germany
2 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Germany
3 Universität Konstanz, Fakustät für Physik, Postfach 5560, D-7750 Konstanz, Germany
Abstract
Junction-EBIC is used to characterize minority carrier diffusion lengths in heterojunction thin films. Because the submicron diffusion lengths of our CuInSe2-(Zn,Cd)S film devices and the diameter of the generation volume are in the same range, EBIC interpretation taking the generation volume as a point source is difficult. In our model we use a finite size of the generation volume to fit the EBIC measurements. It is possible to measure with a higher accelerating voltage and for that reason effects caused by surface recombination and high injection can be avoided. In this paper the model is described and experimental results are presented.
© EDP Sciences 1991