SiGe Hetero FETs on silicon at cryogenic temperature p. 3 F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Höck, T. Hackbarth, H.-J. Herzog et U. König DOI: https://doi.org/10.1051/jp420020026 RésuméPDF (605.0 KB)
The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures p. 11 F. Dieudonné, J. Jomaah, C. Raynaud et F. Balestra DOI: https://doi.org/10.1051/jp420020027 RésuméPDF (257.4 KB)
Degradation of hard MOS devices at low temperature p. 15 N.T. Fourches DOI: https://doi.org/10.1051/jp420020028 RésuméPDF (251.8 KB)
Temperature scaling of nanoscale silicon MOSFETs p. 19 V. Sverdlov, Y. Naveh et K.K. Likharev DOI: https://doi.org/10.1051/jp420020029 RésuméPDF (185.4 KB)
Low temperature operation of graded-channel SOI nMOSFETs for analog applications p. 23 M.A. Pavanello, P.G. Der Agopian1, J.A. Martino et D. Flandre DOI: https://doi.org/10.1051/jp420020030 RésuméPDF (192.1 KB)
New silicon devices beyond CMOS p. 27 E. Suzuki, K. Ishii et T. Sekigawa DOI: https://doi.org/10.1051/jp420020031 RésuméPDF (194.3 KB)
Low temperature operation of 0.13 μm Partially-Depleted SOI nMOSFETs with floating body p. 31 M.A. Pavanello, J.A. Martino, A. Mercha, J.M. Rafi, E. Simoen, C. Claeys, H. van Meer et K. De Meyer DOI: https://doi.org/10.1051/jp420020032 RésuméPDF (216.4 KB)
Low frequency noise versus temperature spectroscopy of Ge JFETs, Si JFETs and Si MOSFETs p. 37 D.V. Camin, C.F. Colombo et V. Grassi DOI: https://doi.org/10.1051/jp420020033 RésuméPDF (382.3 KB)
Cryogenic operation of sub-30 nm nMOSFETs: Impact of device architecture p. 45 G. Bertrand, S. Deleonibus, D. Souil, B. Previtali, C. Caillat, G. Guégan, M. Sanquer et F. Balestra DOI: https://doi.org/10.1051/jp420020034 RésuméPDF (269.2 KB)
MOSFET modeling and parameter extraction for low temperature analog circuit design p. 51 P. Martin, M. Bucher et C. Enz DOI: https://doi.org/10.1051/jp420020035 RésuméPDF (342.3 KB)
Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs p. 57 B. Cretu, F. Balestra, G. Ghibaudo et G. Guégan DOI: https://doi.org/10.1051/jp420020036 RésuméPDF (191.1 KB)
Parasitic conduction in a 0.13 μm CMOS technology at low temperature p. 61 A. Mercha, J.M. Rafi, E. Simoen, E. Augendre et C. Claeys DOI: https://doi.org/10.1051/jp420020037 RésuméPDF (185.0 KB)
Ge semiconductor devices for cryogenic power electronics - II p. 67 R.R. Ward, W.J. Dawson, R.K. Kirschman, O. Mueller, R.L. Patterson, J.E. Dickman et A. Hammoud DOI: https://doi.org/10.1051/jp420020038 RésuméPDF (257.5 KB)
Temperature dependence of generation-recombination noise in p-n junctions p. 71 J.A. Jiménez Tejada, A. Godoy, A. Palma et P. Cartujo DOI: https://doi.org/10.1051/jp420020039 RésuméPDF (237.1 KB)
Forming PbTe on Si-substrates for IR sensors p. 75 V.I. Rudakov et I.M. Smirnov DOI: https://doi.org/10.1051/jp420020040 RésuméPDF (237.5 KB)
Semiconductor microcrystals with ultra-high sensitivity to mechanical strain at cryogenic temperatures p. 79 A. Druzhinin, E. Lavitska, I. Maryamova, T. Palewski et A. Kutrakov DOI: https://doi.org/10.1051/jp420020041 RésuméPDF (250.9 KB)
Si nano-devices using an electron-hole system p. 85 A. Fujiwara et Y. Takahashi DOI: https://doi.org/10.1051/jp420020042 RésuméPDF (736.8 KB)
Mesoscopic transport characteristics of nano-scale SOI MOSFETs: Coulomb blockade and localization p. 93 Y. Omura et M. Yamamoto DOI: https://doi.org/10.1051/jp420020043 RésuméPDF (239.9 KB)
Electron transport in silicon nanostructures based on ultra-thin SOI p. 97 A. Pouydebasque, L. Montes, J. Zimmermann, F. Balestra, D. Fraboulet, D. Mariolle, J. Gautier, F. Schopfer, V. Bouchiat et L. Saminadayar DOI: https://doi.org/10.1051/jp420020044 RésuméPDF (285.4 KB)
Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO2 films p. 103 K. Komiya, Y. Omura, T. Oka et M. Nagahara DOI: https://doi.org/10.1051/jp420020045 RésuméPDF (222.0 KB)
Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime p. 107 X. Jehl, M. Sanquer, G. Bertrand, G. Guégan et S. Deleonibus1 DOI: https://doi.org/10.1051/jp420020046 RésuméPDF (265.5 KB)
A relationship between 1/f noise and DC parameters in the pHEMT at 4.2 K p. 113 T. Lucas et Y. Jin DOI: https://doi.org/10.1051/jp420020047 RésuméPDF (201.2 KB)
DC and 1/f noise characterization of cryogenically cooled pseudomorphic HEMT's p. 117 G. Ferrante, F. Principato, A. Caddemi, N. Donato et G. Tuccari DOI: https://doi.org/10.1051/jp420020048 RésuméPDF (261.4 KB)
Investigations on the low-power and low-frequency noise performance of pHEMT at 4.2 K p. 121 T. Lucas et Y. Jin DOI: https://doi.org/10.1051/jp420020049 RésuméPDF (220.1 KB)
Cryogenic detector systems for materials analysis p. 127 J. Höhne, M. Bühler, F.V. Feilitzsch, J. Jochum, T. Hertrich, C. Hollerith, M. Huber, J. Nicolosi, K. Phelan, D. Redfern et al. (3 de plus) DOI: https://doi.org/10.1051/jp420020050 RésuméPDF (143.1 KB)
New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuits p. 129 J.-C. Villégier, N. Hadacek, C. Jorel, J.-L. Thomassin, V. Bouchiat, M. Faucher, P. Febvre, A. Rousy et G. Lamura DOI: https://doi.org/10.1051/jp420020051 RésuméPDF (403.7 KB)
Low- ramp-type Josephson junctions for SQUIDS p. 133 M. Podt, B.G.A. Rolink, J. Flokstra et H. Regalia DOI: https://doi.org/10.1051/jp420020052 RésuméPDF (298.6 KB)
Absolute high- superconducting radiometer with electrical-substitution for X-rays measurements p. 137 I.A. Khrebtov, A.D. Tkachenko, K.V. Ivanov, A.D. Nikolenko et V.F. Pindyurin DOI: https://doi.org/10.1051/jp420020053 RésuméPDF (291.9 KB)
High-Tc superconducting microbolometer for terahertz applications p. 141 C. Ulysse, A. Gaugue, A. Adam, A.J. Kreisler, J.-C. Villégier et J.-L. Thomassin DOI: https://doi.org/10.1051/jp420020054 RésuméPDF (274.1 KB)
Tantalum superconducting tunnel junctions for photon counting detectors p. 145 C. Jorel, P. Feautrier, J.-C. Villégier et A. Benoit DOI: https://doi.org/10.1051/jp420020055 RésuméPDF (277.9 KB)
Interaction of super high frequency radiation with superconducting Bi(Pb)-Sr-Ca-Cu-O thin-film structures p. 149 V.D. Bondar, M.Ya. Vasyliv, V.M. Davydov, R.V. Lutsiv, O.D. Pustylnik et O.A. Khymenko DOI: https://doi.org/10.1051/jp420020056 RésuméPDF (226.8 KB)
RSFQ: The fastest digital technology p. 155 K.K. Likharev DOI: https://doi.org/10.1051/jp420020057 RésuméPDF (48.48 KB)
A 20-GHz FLUX-1 superconductor RSFQ microprocessor p. 157 M. Dorojevets DOI: https://doi.org/10.1051/jp420020058 RésuméPDF (350.3 KB)
Design and characterization of 225-370 GHz DSB and 247-360 GHz SSB full height waveguide SIS mixers p. 161 B. Lazareff, D. Billon-Pierron, A. Navarrini et I. Péron DOI: https://doi.org/10.1051/jp420020059 RésuméPDF (293.8 KB)
Non-linear two-frequency analysis of SIS mixers through harmonic balance p. 165 S. Withington, P. Kittara et G. Yassin DOI: https://doi.org/10.1051/jp420020060 RésuméPDF (250.6 KB)
Investigation of radiation hardness of SIS junctions for space borne radio astronomy p. 169 I. Péron, G. Faury, Y. Delorme, F. Dauplay, B. Lecomte, M. Salez et K.-F. Schuster DOI: https://doi.org/10.1051/jp420020061 RésuméPDF (225.8 KB)
Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon p. 175 G. Leroy, J. Gest, P. Tabourier, J.-C. Carru, P. Xavier, E. André1 et J. Chaussy DOI: https://doi.org/10.1051/jp420020062 RésuméPDF (205.5 KB)
Integrated niobium thin film air bridges as variable capacitors for GHz tuning circuits p. 179 M. Schicke et K.-F. Schuster DOI: https://doi.org/10.1051/jp420020063 RésuméPDF (273 KB)
Low frequency noise in YBaCuO superconducting thin films deposited on MgO p. 183 G. Leroy, J. Gest, P. Tabourier, J.-C. Carru, A.F. Dégardin et A.J. Kreisler DOI: https://doi.org/10.1051/jp420020064 RésuméPDF (206.2 KB)
Complete microwave characterization at 36 GHz of YBaCuO thin films deposited on MgO substrates. Influence of the substrate preparation p. 187 M. Achani, N. Bourzgui, J.-C. Carru, A.F. Dégardin, A. Gensbittel1 et A.J. Kreisler DOI: https://doi.org/10.1051/jp420020065 RésuméPDF (187.8 KB)
Superconducting cameras for optical astronomy p. 193 D.D.E. Martin, P.Verhoeve, J.H.J. de Bruijne, A.P. Reynolds, A. Van Dordrecht, J. Verveer, J. Page, N. Rando et A. Peacock DOI: https://doi.org/10.1051/jp420020066 RésuméPDF (616.4 KB)
A 4.2 K readout channel in a standard 0.7 μm CMOS process for a photoconductor array camera p. 203 Y. Creten, O. Charlier, P. Merken, J. Putzeys et C. Van Hoof DOI: https://doi.org/10.1051/jp420020067 RésuméPDF (154.5 KB)
Electronics for deep space cryogenic applications p. 207 R.L. Patterson, A. Hammoud, J.E. Dickman, S. Gerber, M. Elbuluk et E. Overton DOI: https://doi.org/10.1051/jp420020068 RésuméPDF (245.7 KB)
Demonstration of an 4.2 K analog switch matrix in a standard 0.7 μ CMOS process p. 211 Y. Creten, J. De Hert, O. Charliert, P. Merken, J. Putzeys et C. Van Hoof DOI: https://doi.org/10.1051/jp420020069 RésuméPDF (95.19 KB)
ramp-type Josephson junctions for SQUIDS