| Numéro |
J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated FerroelectricsEMIF 2 |
|
|---|---|---|
| Page(s) | Pr9-247 - Pr9-250 | |
| DOI | https://doi.org/10.1051/jp4:1998948 | |
2nd European Meeting on Integrated Ferroelectrics
EMIF 2
J. Phys. IV France 08 (1998) Pr9-247-Pr9-250
DOI: 10.1051/jp4:1998948
1 INPG-ENSPG-LMPG, UMR 5628 du CNRS, BP. 46, 38402 Saint-Martin-d'Hères, France
2 Institut für Angewandte Physik, TH Karlsruhe, 76128 Karlsruhe, Germany
3 L MC, Parc Valrose, 06108 Nice, France
© EDP Sciences 1998
EMIF 2
J. Phys. IV France 08 (1998) Pr9-247-Pr9-250
DOI: 10.1051/jp4:1998948
Microstructure of BaTiO3 and SrTiO3 layers obtained by injection MOCVD
J. Lindner1, F. Weiss1, J.-P. Sénateur1, B. Ploss2, L. Hubert-Pfalzgraf3 and S. Daniele31 INPG-ENSPG-LMPG, UMR 5628 du CNRS, BP. 46, 38402 Saint-Martin-d'Hères, France
2 Institut für Angewandte Physik, TH Karlsruhe, 76128 Karlsruhe, Germany
3 L MC, Parc Valrose, 06108 Nice, France
Abstract
BaTiO3 (BTO) and SrTiO3 (STO) layers were deposited by injection MOCVD using both a mixed Ba2Ti2, precursor (dissolved in hexane) and a Sr(thd)2, Ba(thd)2 and Ti(OPr)2(thd)2 precursor system (dissolved in monoglyme). Films have been deposited at different temperatures between 600°C and 850°C. The microstructural properties of the films obtained on different kinds of substrates MgO (100), LaAlO3 (012), sapphire (1-102). Si (100), Pt on Si and YBa2Cu3O7(YBCO) on LaAlO3, are compared.
© EDP Sciences 1998