Issue
J. Phys. IV France
Volume 08, Number PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
EMIF 2
Page(s) Pr9-247 - Pr9-250
DOI https://doi.org/10.1051/jp4:1998948
2nd European Meeting on Integrated Ferroelectrics
EMIF 2

J. Phys. IV France 08 (1998) Pr9-247-Pr9-250

DOI: 10.1051/jp4:1998948

Microstructure of BaTiO3 and SrTiO3 layers obtained by injection MOCVD

J. Lindner1, F. Weiss1, J.-P. Sénateur1, B. Ploss2, L. Hubert-Pfalzgraf3 and S. Daniele3

1  INPG-ENSPG-LMPG, UMR 5628 du CNRS, BP. 46, 38402 Saint-Martin-d'Hères, France
2  Institut für Angewandte Physik, TH Karlsruhe, 76128 Karlsruhe, Germany
3  L MC, Parc Valrose, 06108 Nice, France


Abstract
BaTiO3 (BTO) and SrTiO3 (STO) layers were deposited by injection MOCVD using both a mixed Ba2Ti2, precursor (dissolved in hexane) and a Sr(thd)2, Ba(thd)2 and Ti(OPr)2(thd)2 precursor system (dissolved in monoglyme). Films have been deposited at different temperatures between 600°C and 850°C. The microstructural properties of the films obtained on different kinds of substrates MgO (100), LaAlO3 (012), sapphire (1-102). Si (100), Pt on Si and YBa2Cu3O7(YBCO) on LaAlO3, are compared.



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