Journal de Physique IV

Exciton relaxation dynamics in quantum well heterostructures p. C5-3

M. COLOCCI, M. GURIOLI et J. MARTINEZ-PASTOR

DOI: https://doi.org/10.1051/jp4:1993501

Free exciton versus free carrier luminescence in a quantum well p. C5-11

B. DEVEAUD, B. SERMAGE et D.S. KATZER

DOI: https://doi.org/10.1051/jp4:1993502

Heavy-hole intersubband transition of resonantly excited excitons in quantum wells p. C5-15

R.A. HÖPFEL et R. RODRIGUES

DOI: https://doi.org/10.1051/jp4:1993503

Lifetime of excitons in GaAs quantum wells p. C5-19

B. SERMAGE, S. LONG, B. DEVEAUD et D.S. KATZER

DOI: https://doi.org/10.1051/jp4:1993504

Picosecond photoluminescence of resonantly-excited excitons in GaAs quantum wells p. C5-27

A. VINATTIERI, J. SHAH, T.C. DAMEN, D.S. KIM, L.N. PFEIFFER et L.J. SHAM

DOI: https://doi.org/10.1051/jp4:1993505

Optical amplification and its saturation in semiconductor quantum wells p. C5-31

J. BUTTY, G. BONGIOVANNI et J.L. STAEHLI

DOI: https://doi.org/10.1051/jp4:1993506

Quantum electrodynamic effects in semiconductor microcavities - Microlasers and coherent exciton-polariton emission p. C5-39

Y. YAMAMOTO, F. MATINAGA, S. MACHIDA, A. KARLSSON, J . JACOBSON, G. BJÖRK et T. MUKAI

DOI: https://doi.org/10.1051/jp4:1993507

Luminescence from quantum wells arranged within a microcavity p. C5-47

A. FREY, G. JUNGK et R. HEY

DOI: https://doi.org/10.1051/jp4:1993508

Room temperature exciton-photon Rabi splitting in a semiconductor microcavity p. C5-51

R. HOUDRÉ, R.P. STANLEY, U. OESTERLE, M. ILEGEMS et C. WEISBUCH

DOI: https://doi.org/10.1051/jp4:1993509

Quantum well excitonic polaritons : coupling of quantum well excitons to electromagnetic waveguide modes p. C5-59

S. JORDA

DOI: https://doi.org/10.1051/jp4:1993510

Asymmetric quantum well optics from a mean field polariton theory p. C5-63

R. ATANASOV, F. BASSANI et V.M. AGRANOVICH

DOI: https://doi.org/10.1051/jp4:1993511

Exciton magnetic polarons in semimagnetic quantum wells and superlattices p. C5-67

D.R. YAKOVLEV

DOI: https://doi.org/10.1051/jp4:1993512

Two dimensional excitonic magnetic polarons in Cd_1-xMn_xTe/Cd_1-yMn_yTe quantum wells p. C5-75

W. GRIESHABER, M. HALSALL, A. WASIELA, Y. MERLE D'AUBIGNÉ, C. BODIN-DESHAYES, J. CIBERT et G. FEUILLET

DOI: https://doi.org/10.1051/jp4:1993513

The lifetime of quasi-free exciton magnetic polaron in a quantum well with semimagnetic barriers p. C5-79

A.V. KAVOKIN

DOI: https://doi.org/10.1051/jp4:1993514

Exciton-related lasing mechanism in ZnSe-(Zn, Cd) Se multiple quantum wells p. C5-83

Y. KAWAKAMI, I. HAUKSSON, H. STEWART, J. SIMPSON, I. GALBRAITH, K.A. PRIOR et B.C. CAVENETT

DOI: https://doi.org/10.1051/jp4:1993515

Exciton scattering processes in ZnSe/ZnS_xSe_1-x MQW structures p. C5-91

M. DABBICCO, R. TOMMASI, R. CINGOLANI, M. LEPORE, M. FERRARA, Y. KURODA et I. SUEMUNE

DOI: https://doi.org/10.1051/jp4:1993516

Negatively charged exciton X and donor bound exciton D⁰X in planar doped CdTe/Cd_l-xZn_xTe quantum well heterostructures p. C5-95

K. KHENG, R.T. COX, M. MAMOR, K. SAMINADAYAR et S. TATARENKO

DOI: https://doi.org/10.1051/jp4:1993517

Morphology of InGaAs/InP QWs : from excitonic spectroscopy to HR-TEM analyses p. C5-99

J. CAMASSEL, S. JUILLAGUET, R. SCHWEDLER, K. WOLTER, F.H. BAUMANN, K. LEO et J.P. LAURENTI

DOI: https://doi.org/10.1051/jp4:1993518

Photoluminescence from GaAs/AlGaAs quantum wires and quantum dots p. C5-107

K. BRUNNER, U. BOCKELMANN, G. ABSTREITER, M. WALTHER, G. BÖHM, G. TRÄNKLE et G. WEIMANN

DOI: https://doi.org/10.1051/jp4:1993519

Optical properties of GaAs/AlGaAs quantum dots realized by implantation induced intermixing p. C5-115

F.E. PRINS, F. ADLER, G. LEHR, S.Yu. NIKITIN, H. SCHWEIZER et G.W. SMITH

DOI: https://doi.org/10.1051/jp4:1993520

Photoluminescence from Si/Si_0.87Ge_0.13 multiple quantum well wires p. C5-119

Y.S. TANG, C.M. SOTOMAYOR TORRES, C.D.W. WILKINSON, D.W SMITH, T.E. WHALL et E.H.C. PARKER

DOI: https://doi.org/10.1051/jp4:1993521

Optical properties of quantum wells with a field-effect-induced lateral superlattice p. C5-123

C. PETERS, W. HANSEN, J.P. KOTTHAUS et M. HOLLAND

DOI: https://doi.org/10.1051/jp4:1993522

Two-photon absorption in low-dimensional heterostructures p. C5-131

R. CINGOLANI, M. LEPORE, R. TOMMASI, I.M. CATALANO, H. LAGE, D. HEITMANN et K. PLOOG

DOI: https://doi.org/10.1051/jp4:1993523

Lateral quantization effects in the optical properties of barrier modulated InGaAs/GaAs wires p. C5-139

Ch. GRÉUS, R. SPIEGEL, F. FALLER et A. FORCHEL

DOI: https://doi.org/10.1051/jp4:1993524

Observation of higher confined exciton states in serpentine superlattices by linear polarized excitation spectroscopy p. C5-143

H. WEMAN, C.E. PRYOR, M.S. MILLER et J.L. MERZ

DOI: https://doi.org/10.1051/jp4:1993525

Optical characterization of CdTe/ZnTe semiconductor wires and dots p. C5-147

C. GOURGON, B. ERIKSSON, L.S. DANG, H. MARIETTE et C. VIEU

DOI: https://doi.org/10.1051/jp4:1993526

Time-resolved resonance Raman scattering and luminescence from confined excitons in AgBr quantum dots p. C5-151

S. PAWLIK, U. SCHOLLE, Th. WEBER, H. STOLZ et W. VON DER OSTEN

DOI: https://doi.org/10.1051/jp4:1993527

Luminescence of biexcitons in CuBr quantum dots p. C5-155

O. WIND, U. WOGGON, O. GOGOLIN et C. KLINGSHIRN

DOI: https://doi.org/10.1051/jp4:1993528

Optical non-linearities due to charge transfer in type II heterostructures p. C5-159

R. PLANEL, R. TEISSIER et F. MOLLOT

DOI: https://doi.org/10.1051/jp4:1993529

Condensation of indirect excitons in coupled AlAs/GaAs quantum wells p. C5-167

L.V. BUTOV, A. ZRENNER, G. BÖHM et G. WEIMANN

DOI: https://doi.org/10.1051/jp4:1993530

Temperature dependence of exciton-capture at impurities in GaAs/Al_xGa_(1-x) As quantum wells p. C5-171

C.I. HARRIS, B. MONEMAR, P.O. HOLTZ, H. KALT, M. SUNDARAM, J.L. MERZ et A.C. GOSSARD

DOI: https://doi.org/10.1051/jp4:1993531

Electron spin-polarization in p-doped quantum wells p. C5-175

R. FERREIRA, Ph. ROUSSIGNOL, P. ROLLAND, G. BASTARD, C. DELALANDE, A. VINATTIERI et G. WEIMANN

DOI: https://doi.org/10.1051/jp4:1993532

The linear and circular polarizations of exciton luminescence in GaAs/AlGaAs quantum wells p. C5-179

A. FROMMER, E. COHEN, A. RON, J.A. KASH et L.N. PFEIFFER

DOI: https://doi.org/10.1051/jp4:1993533

Anisotropic exciton states in GaAs/AlAs superlattices in zero and non-zero magnetic field p. C5-183

C. GOURDON, D.Yu. RODICHEV, P. LAVALLARD, G. BACQUET et R. PLANEL

DOI: https://doi.org/10.1051/jp4:1993534

Polarized exciton magnetoluminescence under resonance excitation of GaAs/AlAs type II superlattices p. C5-187

G.E. PIKUS et F.G. PIKUS

DOI: https://doi.org/10.1051/jp4:1993535

Fano resonances in quasi-2D excitons p. C5-191

J.A. BRUM et D. OBERLI

DOI: https://doi.org/10.1051/jp4:1993536

Rigorous excitonic theory of field dependent superlattice absorption p. C5-195

N. LINDER, W. GEISSELBRECHT, G. PHILIPP, K.H. SCHMIDT et G.H. DÖHLER

DOI: https://doi.org/10.1051/jp4:1993537

Excitonic theory of stark ladder spectra in superlattices p. C5-199

D.M. WHITTAKER

DOI: https://doi.org/10.1051/jp4:1993538

Stark ladders in strongly coupled finite superlattices p. C5-203

R.G. ROBERTS, P. HARRISON, T. STIRNER et W.E. HAGSTON

DOI: https://doi.org/10.1051/jp4:1993539

Quantum beats and polarization interference from excitons in quantum wells p. C5-207

J. FELDMANN

DOI: https://doi.org/10.1051/jp4:1993540

Coherent excitonic effects in quantum wells p. C5-215

J. SHAH et D.S. KIM

DOI: https://doi.org/10.1051/jp4:1993541

Type II narrow double barrier quantum well structures : Γ-X coupling and interface effects p. C5-225

B. CHASTAINGT, G. NEU, C. DEPARIS, J. MASSIES, J. MARTINEZ-PASTOR, M. COLOCCI et M. GURIOLI

DOI: https://doi.org/10.1051/jp4:1993542

Electric field induced [MATH]-X transition in GaAs-AlAs coupled quantum well structures p. C5-229

M. HAGN, A. ZRENNER, G. BÖHM et G. WEIMANN

DOI: https://doi.org/10.1051/jp4:1993543

Space charge effects on interband optical nonlinearities in asymmetric coupled quantum wells p. C5-233

K. FRÖJDH, U. OLIN et R. PLANEL

DOI: https://doi.org/10.1051/jp4:1993544

Γ-X mixing in type-II GaAs/AlAs short period superlattices p. C5-237

V. VOLIOTIS, R. GROUSSON, P. LAVALLARD, E.L. IVCHENKO, A.A. KISELEV et R. PLANEL

DOI: https://doi.org/10.1051/jp4:1993545

Interband and intersubband transitions in photoexcited mixed type I and type II GaAs/AlAs superlattices p. C5-241

Y. GARINI, E. LINDER, E. COHEN, D. GERSHONI, E. EHRENFREUND, A. RON et L.N. PFEIFFER

DOI: https://doi.org/10.1051/jp4:1993546

Type II GaAs/AlAs superlattices under high excitation p. C5-245

K. BOUJDARIA, D. SCALBERT et C. BENOIT À LA GUILLAUME

DOI: https://doi.org/10.1051/jp4:1993547

Optical properties of single and double (111)-grown (Ga, In)As-GaAs strained-layer quantum wells under strong photo-injection p. C5-249

P. BORING, K.J. MOORE, P. BIGENWALD, B. GIL et K. WOODBRIDGE

DOI: https://doi.org/10.1051/jp4:1993548

Low power all-optical bistability in InGaAs-AlInAs superlattices : demonstration of a wireless self-electro-optical effect device p. C5-253

J. COUTURIER, J.C. HARMAND et P. VOISIN

DOI: https://doi.org/10.1051/jp4:1993549

Exciton saturation and field screening in InGaAs/InGaAsP multiple quantum wells p. C5-257

T. TÜTKEN, B.J. HAWDON, E. SCHEUBLE, M. ZIMMERMANN, P. KÖNIG, A. HANGLEITER, V. HÄRLE et F. SCHOLZ

DOI: https://doi.org/10.1051/jp4:1993550

Interface excitons in type-two quantum structures p. C5-261

R. ZIMMERMANN et D. BIMBERG

DOI: https://doi.org/10.1051/jp4:1993551

Excitonic transitions in GaInAs/GaAs surface quantum wells p. C5-265

J. DREYBRODT, A. FORCHEL et J.P. REITHMAIER

DOI: https://doi.org/10.1051/jp4:1993552

Indirect excitons in strained Ga_xIn_1-xAs/InP quantum wells p. C5-269

P. MICHLER, A. HANGLEITER, A. MORITZ, G. FUCHS, V. HÄRLE et F. SCHOLZ

DOI: https://doi.org/10.1051/jp4:1993553

Optically induced excitonic distribution in GaInAs-AlGaInAs semiconductor superlattices under an electric field p. C5-273

G. WANG, P. TRONC, J. DEPEYROT, J.C. HARMAND et J.F. PALMIER

DOI: https://doi.org/10.1051/jp4:1993554

Photoluminescence observation of quantum confined stark effect caused by band bending near the surface of etched structures with GaAs/AlGaAs wells p. C5-277

V.N. ASTRATOV et Yu.A. VLASOV

DOI: https://doi.org/10.1051/jp4:1993555

Excitons in {311} oriented superlattices: optical anisotropies p. C5-283

G. ARMELLES, P. CASTRILLO, P.S. DOMÍNGUEZ, L. GONZÁLEZ, A. RUIZ, D.A. CONTRERAS, V.R. VELASCO et F. GARCÍA-MOLINER

DOI: https://doi.org/10.1051/jp4:1993556

Confined electron states in corrugated GaAs/AlAs superlattices p. C5-287

C. JOUANIN et D. BERTHO

DOI: https://doi.org/10.1051/jp4:1993557

Effect of thermal diffusion on the excitonic reflectivity spectra of InGaAs/GaAs quantum wells p. C5-291

W.P. GILLIN, H. PEYRE, J. CAMASSEL, K.P. HOMEWOOD, I.V. BRADLEY et R. GREY

DOI: https://doi.org/10.1051/jp4:1993558

Indium segregation and misorientation effects on the optical properties of MBE grown In_0.35Ga_0.65As/GaAs quantum wells p. C5-295

C. MONIER, J. LEYMARIE, A. MARTI CESHIN, N. GRANDJEAN, A. VASSON, A.-M. VASSON, M. LEROUX et J. MASSIES

DOI: https://doi.org/10.1051/jp4:1993559

A photoluminescence study of δ-doped GaAs p. C5-299

M. EL ALLALI,, C.B. SORENSEN et E. VEJE

DOI: https://doi.org/10.1051/jp4:1993560

Selective exciton formation in thin GaAs-AlGaAs quantum wells p. C5-303

P.W.M. BLOM, P.J. VAN HALL, C. SMIT, J.P. CUYPERS et J.H. WOLTER

DOI: https://doi.org/10.1051/jp4:1993561

Dynamics of excitonic photoluminescence lineshape in narrow GaAs single quantum wells p. C5-307

K. FUJIWARA, R. CINGOLANI et K. PLOOG

DOI: https://doi.org/10.1051/jp4:1993562

The electronic structure of a shallow acceptor and its bound exciton confined in GaAs/AlGaAs quantum wells p. C5-311

P.O. HOLTZ, Q.X. ZHAO, B. MONEMAR, C. HARRIS, M. SUNDARAM, J.L. MERZ et A.C. GOSSARD

DOI: https://doi.org/10.1051/jp4:1993563

Experimental evidence of exciton wavefunction shrinkage in In_xGa_1-xAs/InP multi quantum wells p. C5-315

B. ROTELLI, C. ARENA, L. TARRICONE et C. RIGO

DOI: https://doi.org/10.1051/jp4:1993564

Optical pumping in strained In_0.2Ga_0.8As/GaAs quantum wells p. C5-319

G. BACQUET, F. HASSEN, N. LAURET, J. BARRAU, A. MARTI-CESCHIN, N. GRANDJEAN et J. MASSIES

DOI: https://doi.org/10.1051/jp4:1993565

Oscillator strength of the E₁HH₁ excitonic transition as a function of magnetic field in modulation doped GaAlAs/GaAs quantum well p. C5-323

P. VICENTE, A.V. KAVOKIN, A. RAYMOND, S.G. LYAPIN, K. ZEKENTES, D. DUR et W. KNAP

DOI: https://doi.org/10.1051/jp4:1993566

Band offsets in strained InGaAsP/InGaAsP quantum well optical modulator structures p. C5-327

R.W. MARTIN, S.L. WONG, R.J. NICHOLAS, A. SMITH, M.A. GIBBON, E.J. THRUSH et J.P. STAGG

DOI: https://doi.org/10.1051/jp4:1993567

Excited-state excitons in strained quantum wells under pressure p. C5-331

D. LEONG, A.D. PRINS, A.T. MENEY, D.J. DUNSTAN et K.P. HOMEWOOD

DOI: https://doi.org/10.1051/jp4:1993568

Carrier confinement and fabrication effects in GaInAs-InP quantum wires and dots p. C5-335

R.W. MAC LEOD, C.M. SOTOMAYOR TORRES, Y.S. TANG et A. KOHL

DOI: https://doi.org/10.1051/jp4:1993569

Quantum wires obtained by dislocation slipping p. C5-339

F. VOILLOT, R. CARLES, M. GOIRAN, C. GUASCH, J.P. PEYRADE et E. BEDEL

DOI: https://doi.org/10.1051/jp4:1993570

Exciton states in GaAs/AlGaAs Bragg confining structures studied by resonant Raman scattering p. C5-343

M. ZAHLER, E. COHEN, J. SALZMAN, E. LINDER et L.N. PFEIFFER

DOI: https://doi.org/10.1051/jp4:1993571

Optical properties of excitons in GaAs quantum wires p. C5-347

R. RINALDI, R. CINGOLANI, M. FERRARA, U. MARTI, D. MARTIN, F.K. REINHART, H. LAGE, D. HEITMANN et K. PLOOG

DOI: https://doi.org/10.1051/jp4:1993572

Spin relaxation of excitons in strained InGaAs/GaAs quantum wells p. C5-351

B. DAREYS, T. AMAND, X. MARIE, B. BAYLAC, J. BARRAU,, M. BROUSSEAU, I. RAZDOBREEV et D.J. DUNSTAN

DOI: https://doi.org/10.1051/jp4:1993573

Calculation of exchange energy in quantum dots : application to porous silicon p. C5-355

G. FISHMAN, R. ROMESTAIN et J.C. VIAL

DOI: https://doi.org/10.1051/jp4:1993574

Luminescence of silicon crystallites p. C5-359

C. DELERUE, E. MARTIN, J.-F. LAMPIN, G. ALLAN et M. LANNOO

DOI: https://doi.org/10.1051/jp4:1993575

Exciton resonance reflectivity study of quantum well wires p. C5-363

V.P. KOCHERESHKO, E.L. IVCHENKO, A.V KAVOKIN, P.S. KOPEV et N.N. LEDENTSOV

DOI: https://doi.org/10.1051/jp4:1993576

Stark effect in parabolic quantum dot p. C5-367

S. JAZIRI, G. BASTARD et R. BENNACEUR

DOI: https://doi.org/10.1051/jp4:1993577

Excitons in quantum disks and disk arrays p. C5-373

S. GLUTSCH, B. ADOLPH et F. BECHSTEDT

DOI: https://doi.org/10.1051/jp4:1993578

General formalism for excitonic absorption edges in confined systems with arbitrary dimensionality p. C5-377

P. LEFEBVRE, P. CHRISTOL et H. MATHIEU

DOI: https://doi.org/10.1051/jp4:1993579

Magnetoexcitons in zero-dimensional parabolic quantum dots p. C5-381

A.B. DZYUBENKO et A.Yu. SIVACHENKO

DOI: https://doi.org/10.1051/jp4:1993580

Excitons in a single quantum well wire: optical response and application to the gratings p. C5-385

A. D'ANDREA et L. PILOZZI

DOI: https://doi.org/10.1051/jp4:1993581

Excitonic polariton interference in the reflectance of GaAs thin films p. C5-389

A. TREDICUCCI, Y. CHEN, G . CZAJKOWSKI et F. BASSANI

DOI: https://doi.org/10.1051/jp4:1993582

Squeezed polaritons in confined systems p. C5-393

H. HRADIL, A. QUATTROPANI, V. SAVONA et P. SCHWENDIMANN

DOI: https://doi.org/10.1051/jp4:1993583

Optical properties of single magnetic quantum wells in an external magnetic field p. C5-397

S. WESTON, T. STIRNER, P. HARRISON, J.E. NICHOLLS, W.E. HAGSTON et D.E. ASHENFORD

DOI: https://doi.org/10.1051/jp4:1993584

Comparative studies of excitons in magnetic asymmetric double quantum well structures p. C5-401

S.J. WESTON, J.E. NICHOLLS, M. O'NEILL, T STIRNER, P. HARRISON, W.E. HAGSTON, J.H.C. HOGG, B. LUNN, D.E. ASHENFORD et K. HIEKE

DOI: https://doi.org/10.1051/jp4:1993585

Time-resolved optical studies of coupling in CdTe/CdMnTe asymmetric double quantum wells p. C5-405

I. LAWRENCE, W.W. RÜHLE, G. FEUILLET, H. TUFFIGO, H. MARIETTE, C. BODIN et J. CIBERT

DOI: https://doi.org/10.1051/jp4:1993586

Magnetoreflectivity study of type I - type II transition in CdTe/(Cd, Mn)Te quantum wells p. C5-409

A. RIBAYROL, D. COQUILLAT, A.V. KAVOKIN, J.P. LASCARAY, H.P. ZHOU, C.M. SOTOMAYOR TORRES, B. LUNN et D.E. ASHENFORD

DOI: https://doi.org/10.1051/jp4:1993587

Zn(S, Se)-based quantum wells : band offsets, excitons and optical properties p. C5-413

G. MARTINO, R. GIRLANDA, N. TOMASSINI, A. D'ANDREA et R. ATANASOV

DOI: https://doi.org/10.1051/jp4:1993588

Ionized donor impurity in a semiconductor quantum well p. C5-417

B. STÉBÉ, L. STAUFFER et D. FRISTOT

DOI: https://doi.org/10.1051/jp4:1993589

Optical properties of ZnSe-ZnTe type II superlattices p. C5-421

T. CLOITRE, N. BRIOT, O. BRIOT, P. BORING, B. GIL et R.L. AULOMBARD

DOI: https://doi.org/10.1051/jp4:1993590

Optical study of a ZnSe/Zn_0.73Mn_0.27Se heterostructure p. C5-425

T LEBIHEN, E. DELEPORTE, M. VOOS, S. GUHA et H. MUNEKATA

DOI: https://doi.org/10.1051/jp4:1993591

Non-linear piezoelectric effect in CdTe and CdZnTe p. C5-429

R. ANDRÉ, C. BODIN, J. CIBERT, L.S. DANG et G. FEUILLET

DOI: https://doi.org/10.1051/jp4:1993592

Nonlinear optical spectra of confined and localized excitons in mesoscopic domain and quasi-2D stacking fault interface in BiI₃ crystals p. C5-433

I. AKAI, H. KONDO, M. ICHIDA, T. KARASAWA et T. KOMATSU

DOI: https://doi.org/10.1051/jp4:1993593

Dielectrically confined excitons and polaritons in natural superlattices - perovskite lead iodide semiconductors p. C5-437

N.A. GIPPIUS, T. ISHIHARA, L.V KELDYSH, E.A. MULJAROV et S.G. TIKHODEEV

DOI: https://doi.org/10.1051/jp4:1993594

Le Journal de Physique IV

Volume 03 / Numéro C5 (Octobre 1993)

Third International Conference on Optics of Excitons in Confined