Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-287 - C5-290
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-287-C5-290

DOI: 10.1051/jp4:1993557

Confined electron states in corrugated GaAs/AlAs superlattices


Groupe d'Etude des Semiconducteurs, Université Montpellier II, CC074, place E. Bataillon, 34095 Montpellier cedex 5, France

The electronic and optical properties of GaAs/AlAs superlattices grown in the [311] direction are investigated in the framework of an empirical tight-binding mode1 which includes second-neighbor interactions. The [311] superlattices are of great interest because of their non-flat interfaces and because the periodic corrugation which appears gives rise to a lateral confinement. This results in the formation of quantum wires which present a pronounced degree of optical anisotropy. The characteristics and the energy gap value of these wires are studied as functions of the layer thickness and the differences with [001]-grown superlattices are discussed. The calculated cross-over of T- and X-like levels is in good agreement with the experimental observations. The nature of the lowest conduction states is explained in terms of the symmetry of the superlattice.

© EDP Sciences 1993