Le Journal de Physique IV 03 (1993) C5-323-C5-326
Oscillator strength of the E1HH1 excitonic transition as a function of magnetic field in modulation doped GaAlAs/GaAs quantum wellP. VICENTE1, A.V. KAVOKIN1, A. RAYMOND1, S.G. LYAPIN2, K. ZEKENTES3, D. DUR1 and W. KNAP1
1 Groupe d'Etudes des Semiconducteurs, CNRS, Université Montpellier II, place E. Bataillon, 34095 Montpellier cedex 5, France
2 Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.
3 FORTH Institute of Electronic Structures and Lasers, P.O. Box 1527, Heralion 71110 Crete, Greece
We present an experimental and theoretical investigation of the oscillator strength of E1HH1 excitonic transition in the presence of the external magnetic field in thick GaAlAs/GaAs quantum well. We observe a dramatic increase of the oscillator strength given by a factor 6 when the magnetic field increases from 0 to 8 Tesla. The variational calculation performed in models of exciton confinement as a whole particle, and independent electron and hole quantization demonstrates the substantial magnetic field induced squeezing of the exciton wave function in a QW plane, which causes an increase of the oscillaltor strength in good agreement with experimental data.
© EDP Sciences 1993