Le Journal de Physique IV 03 (1993) C5-327-C5-330
Band offsets in strained InGaAsP/InGaAsP quantum well optical modulator structuresR.W. MARTIN1, S.L. WONG1, R.J. NICHOLAS1, A. SMITH2, M.A. GIBBON2, E.J. THRUSH2 and J.P. STAGG2
1 Department of Physics, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.
2 BNR Europe Ltd., London Road, Harlow, Essex CM17 9NA, U.K.
Magneto-absorption experiments on a range on In1-xGaxAsyP1-y/InGaAsP multi-quantum well (MQW) structures, including both tensile and compressive strained wells, are presented. Estimates for the band offsets are made in a lattice matched and a strain-balanced structure, and a model to predict the band offsets as a function of strain in InGaAsP heterostructures is described.
© EDP Sciences 1993