Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon

G. Leroy; J. Gest; P. Tabourier; J.-C. Carru; P. Xavier; E. André1; J. Chaussy

doi:doi:10.1051/jp420020062

Issue		J. Phys. IV France Volume 12, Number 3, May 2002


Page(s)		175 - 178
DOI		https://doi.org/10.1051/jp420020062

J. Phys. IV France 12 (2002) Pr3-175
DOI: 10.1051/jp420020062

Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon

G. Leroy¹, J. Gest¹, P. Tabourier¹, J.-C. Carru¹, P. Xavier², E. André1¹ and J. Chaussy²

¹ Laboratoire d'Étude des Matériaux et des Composants pour l'Électronique (LEMCEL), E.A. 2601, Université du Littoral Côte d'Opale, BP. 717, 62228 Calais, France
² Centre de Recherche sur les Très Basses Températures, CRTBT, CNRS, BP. 166X, 38042 Grenoble cedex 9, France

Abstract
In this paper we present, to our knowledge, the first low frequency noise characterization of two NbNx thin films deposited on a silicon substrate. Using a transmission line model (TLM) test structure, it is checked that the noise of the contacts is negligible. From 77 K to 300 K no generation-recombination ( g- r) noise is observed and both samples exhibit only 1/ f noise. By referring to noise studies in semiconductor materials, a first interpretation is suggested.