Numéro |
J. Phys. IV France
Volume 12, Numéro 3, May 2002
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Page(s) | 103 - 106 | |
DOI | https://doi.org/10.1051/jp420020045 |
J. Phys. IV France 12 (2002) Pr3-103
DOI: 10.1051/jp420020045
Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO2 films
K. Komiya, Y. Omura, T. Oka and M. NagaharaHigh-Technology Research Center, Department of Electronics, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
Abstract
The experimentally determined conduction mechanisms of gate leakage current are examined for two
different soft-breakdown events: analog-soft-breakdown and digital-soft-breakdown. It is strongly suggested that neither variable-range-hopping
conduction nor space-charge-limited conduction, by themselves, form the major part
of possible conduction mechanisms after analog-soft-breakdown events. On the other hand, it is found that the incremental
gate current after digital-soft-breakdown events can be expressed in a simple closed form as functions of temperature and
gate voltage; the expression indicates that the post-digital-soft-breakdown current is not ruled by a simple or single conduction
mechanism.
© EDP Sciences 2002