| Numéro |
J. Phys. IV France
Volume 12, Numéro 3, May 2002
|
|
|---|---|---|
| Page(s) | 93 - 96 | |
| DOI | https://doi.org/10.1051/jp420020043 | |
J. Phys. IV France 12 (2002) Pr3-93
DOI: 10.1051/jp420020043
Mesoscopic transport characteristics of nano-scale SOI MOSFETs: Coulomb blockade and localization
Y. Omura1 and M. Yamamoto21 High-Technology Research Center, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
2 Division Electronics and Information Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan
Abstract
This paper describes the transport characteristics, measured at 1.1 K, of 50-nm-channel SOI MOSFETs with a 6-nm-thick silicon
layer. To verify electron localization, Fermi wavelength, periodic length of primary interface morphology, and ideal cyclotron
radius are estimated theoretically. It is shown that nonperiodic roughness may contribute to Anderson localization while the
local periodic structure of the interface morphology is associated with Coulomb blockade.
© EDP Sciences 2002