| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-21 - C6-21 | |
| DOI | https://doi.org/10.1051/jp4:1991603 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-21-C6-21
DOI: 10.1051/jp4:1991603
1 Laboratoire de Physique des Matériaux, CNRS, 1 Place A. Briand, F-92195 Meudon Cedex, France
2 Laboratoire de Physique des Solides de Bellevue, CNRS, 1 Place A. Briand, F-92195 Meudon Cedex, France
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-21-C6-21
DOI: 10.1051/jp4:1991603
ANALYSIS OF THE RECOMBINATION VELOCITY AND OF THE EBIC AND CATHODOLUMINESCENCE CONTRAST AT A DISLOCATION
R.J. TARENTO1 and Y. MARFAING21 Laboratoire de Physique des Matériaux, CNRS, 1 Place A. Briand, F-92195 Meudon Cedex, France
2 Laboratoire de Physique des Solides de Bellevue, CNRS, 1 Place A. Briand, F-92195 Meudon Cedex, France
Without abstract
© EDP Sciences 1991
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