J. Phys. IV France
Volume 132, March 2006
Page(s) 137 - 139
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 137-139

DOI: 10.1051/jp4:2006132027

Characteristics of metal-silicon carbide tunnel contact

V.M. Aroutiounian1, V.V. Buniatyan2, P.G. Soukiassian3 and Vaz. V. Buniatyan2

1  Yerevan State University, Al. Manoukian Str. 1, 375049 Yerevan, Armenia
2  State Engineering University of Armenia, 105 Teryan Str., 375009 Yerevan, Armenia
3  Commissariat à l'Énergie Atomique, Laboratoire Surfaces et Interfaces de Matériaux Avancés associé à l'Université de Paris-Sud/Orsay, DSM-DRECAM-SPCSI, Bâtiment 462, Saclay, 91191 Gif-sur-Yvette Cedex, France

Metal-semiconductor tunneling contact characteristics on the base of Silicon Carbide with trap levels in the semiconductor bandgap are theoretically examined. It is shown that the magnitude of avalanche voltage can be increased under the influence of trapping charge carriers tunneling from the metal to the semiconductor. It is shown that with the increased of temperature the breakdown avalanche voltage of the contacts is decreased.

© EDP Sciences 2006