| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 133 - 136 | |
| DOI | https://doi.org/10.1051/jp4:2006132026 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 133-136
DOI: 10.1051/jp4:2006132026
1 Budapest University of Technology and Economics, Department of Atomic Physics, Surface Physics Laboratory, 1111 Budapest XI, Budafoki út 8, Hungary
2 Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Science, PO Box 49, 1525 Budapest, Hungary
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 133-136
DOI: 10.1051/jp4:2006132026
Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface properties
A. Pongrácz0, 1, 2, G. Battistig2, A.L. Tóth2, Zs. Makkai2, Cs. Dücso2, K.V. Josepovits1 and I. Bársony21 Budapest University of Technology and Economics, Department of Atomic Physics, Surface Physics Laboratory, 1111 Budapest XI, Budafoki út 8, Hungary
2 Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Science, PO Box 49, 1525 Budapest, Hungary
Abstract
Different Miller-indices Si crystal planes covered with thermally
grown SiO2 layer were heat treated in CO containing ambient for
several hours. Our group has been demonstrated that this process
resulting nanometre sized SiC crystallites at the Si side of the
Si/SiO2 interface. Low voltage scanning electron microscopy was
used to obtain information about the microstructure of the system.
Size, morphology and nucleation density of the SiC nanocrystals have
been found to depend strongly on the orientation of the substrates.
Comparing the (110) plane with the other crystal planes the typical
grain size is smaller and the nucleation density is one order of
magnitude higher.
© EDP Sciences 2006