| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 137 - 139 | |
| DOI | https://doi.org/10.1051/jp4:2006132027 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 137-139
DOI: 10.1051/jp4:2006132027
1 Yerevan State University, Al. Manoukian Str. 1, 375049 Yerevan, Armenia
2 State Engineering University of Armenia, 105 Teryan Str., 375009 Yerevan, Armenia
3 Commissariat à l'Énergie Atomique, Laboratoire Surfaces et Interfaces de Matériaux Avancés associé à l'Université de Paris-Sud/Orsay, DSM-DRECAM-SPCSI, Bâtiment 462, Saclay, 91191 Gif-sur-Yvette Cedex, France
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 137-139
DOI: 10.1051/jp4:2006132027
Characteristics of metal-silicon carbide tunnel contact
V.M. Aroutiounian1, V.V. Buniatyan2, P.G. Soukiassian3 and Vaz. V. Buniatyan21 Yerevan State University, Al. Manoukian Str. 1, 375049 Yerevan, Armenia
2 State Engineering University of Armenia, 105 Teryan Str., 375009 Yerevan, Armenia
3 Commissariat à l'Énergie Atomique, Laboratoire Surfaces et Interfaces de Matériaux Avancés associé à l'Université de Paris-Sud/Orsay, DSM-DRECAM-SPCSI, Bâtiment 462, Saclay, 91191 Gif-sur-Yvette Cedex, France
Abstract
Metal-semiconductor tunneling contact characteristics on the base of
Silicon Carbide with trap levels in the semiconductor bandgap are
theoretically examined. It is shown that the magnitude of avalanche
voltage can be increased under the influence of trapping charge
carriers tunneling from the metal to the semiconductor. It is shown
that with the increased of temperature the breakdown avalanche
voltage of the contacts is decreased.
© EDP Sciences 2006