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J. Phys. IV France Vol. 132

Journal de Physique IV (Proceedings)

Vol. 132 (March 2006)

ICFSI-10

10th International Conference on the Formation of Semiconductor Interfaces
Aix-en-Provence, France, 3-8 July 2005

C. Girardeaux, et al.

ISBN: 2-86883-918-5



  • Preface     p. III
    C. Girardeaux, B. Aufray, J. Bernardini, H. Dallaporta, G. Le Lay and P. Soukiassian
    Abstract | PDF file (27.6 KB)


  • Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 $\times$ 2-c(8 $\times$ 2)     p. 1
    P. De Padova, C. Quaresima, P. Perfetti, B. Olivieri, M.C. Richter, O. Heckmann, M. Zerrouki, G. Pennesi, A.M. Paoletti, G. Rossi and K. Hricovini
    Abstract | PDF file (466 KB)


  • Study of electric conductance of atomic or molecular wire in terms of the phase-shift     p. 7
    Y. Otsuka, N. Shima and K. Makoshi
    Abstract | PDF file (102 KB)


  • Soft X-ray photoelectron spectroscopy of metal-phthalocyanines on the (001) surface of GaAs and Ge     p. 11
    G. Cabailh, B.N. Holland, C. Stephens, I.T. McGovern, C. McGuinness, A. Cafolla, A.R. Vearey-Roberts and D.A. Evans
    Abstract | PDF file (247 KB)


  • Surface energy minimization struggle between Ge and Si on 4H-SiC(0001)-(3 $\times$ 3)     p. 17
    D. Dentel, K. Aït-Mansour, M. Derivaz, L. Kubler, M. Diani, D. Bolmont and J.L. Bischoff
    Abstract | PDF file (206 KB)


  • Synchrotron light in semiconductor research: Three decades of revolution     p. 23
    G. Margaritondo
    Abstract | PDF file (888 KB)


  • UHV-STM study of single-walled carbon nanotubes applied to the GaAs(110) and InAs(110) surfaces     p. 31
    L.B. Ruppalt, P.M. Albrecht and J.W. Lyding
    Abstract | PDF file (357 KB)


  • Structural and photoemission studies of SrF2 adsorption on Si(001)     p. 35
    L. Pasquali, S.M. Suturin, A. Balanev, A.K. Kaveev, N.S. Sokolov, B.P. Doyle, F. Borgatti, A. Giglia, N. Mahne, M. Pedio and S. Nannarone
    Abstract | PDF file (378 KB)


  • Electrical barriers at semiconductor interfaces: Some reflections and future challenges     p. 41
    R.H. Williams, K.S. Teng and S.P. Wilks
    Abstract | PDF file (231 KB)


  • The (3 $\times$ 2) $\beta $-SiC(001) surface reconstruction investigated by photoelectron diffraction in the backscattering regime     p. 49
    E.G. Michel, D. Dunham, A. Tejeda, P. Soukiassian, E. Rotenberg and J.D. Denlinger
    Abstract | PDF file (1.29 MB)


  • Electrical conduction through a monatomic surface step     p. 57
    I. Matsuda, T. Hirahara, M. Ueno, R. Hobara and S. Hasegawa
    Abstract | PDF file (263 KB)


  • Electronic properties of metal/MgO(001) interfaces     p. 63
    Y. Lu, C.K. Assi, J.C. Le Breton, P. Turban, B. Lépine, P. Schieffer and G. Jézéquel
    Abstract | PDF file (131 KB)


  • In situ reflectance anisotropy spectroscopy monitoring of wide bandgap biomolecules on vicinal silicon surfaces     p. 69
    S.D. Silaghi, M. Friedrich and D.R.T. Zahn
    Abstract | PDF file (368 KB)


  • Optical properties of the interfaces in organic/organic multilayered heterostructures     p. 73
    O.D. Gordan, S. Hermann, M. Friedrich and D.R.T. Zahn
    Abstract | PDF file (185 KB)


  • Near monolayer deposition of palladium phthalocyanine and perylene tetracarboxylic diimide on Au(001): A STM study     p. 77
    O. Guillermet, A. Glachant, M. Mossoyan and J.C. Mossoyan
    Abstract | PDF file (276 KB)


  • Valence charges for ultrathin SiO2 films formed on Si(100)     p. 83
    K. Hirose, M. Kihara, H. Okamoto, H. Nohira, E. Ikenaga, Y. Takata, K. Kobayashi and T. Hattori
    Abstract | PDF file (128 KB)


  • Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy     p. 87
    M. El Kazzi, G. Delhaye, S. Gaillard, E. Bergignat and G. Hollinger
    Abstract | PDF file (81.9 KB)


  • Surface structure and energy bands of 1/3 ML Sn/Ge(111)     p. 91
    P. Gori, O. Pulci and A. Cricenti
    Abstract | PDF file (375 KB)


  • X-ray photoelectron spectroscopy study of silicon interlayer based surface passivation for AlGaAs/GaAs quantum structures on (111) B surfaces     p. 95
    M. Akazawa, N. Shiozaki and H. Hasegawa
    Abstract | PDF file (133 KB)


  • Characterisation of metal-organic semiconductor interfaces: In and Sn on CuPc     p. 101
    V.Yu. Aristov, O.V. Molodtsova, V.M. Zhilin, D.V. Vyalikh and M. Knupfer
    Abstract | PDF file (168 KB)


  • Electronic properties of intrinsic and heavily doped AlN and GaN     p. 105
    A. Ferreira da Silva and C. Persson
    Abstract | PDF file (452 KB)


  • Electron emission from nano-structured carbon composite materials - an important role of the interface for enhancing the emission     p. 111
    H. Hiraki, N. Jiang, H.X. Wang and A. Hiraki
    Abstract | PDF file (530 KB)


  • In situ formation of a new Al-Pd-Mn-Si quasicrystalline phase on the pentagonal surface of the Al-Pd-Mn quasicrystal     p. 117
    J.-N. Longchamp, M. Erbudak and Y. Weisskopf
    Abstract | PDF file (114 KB)


  • Potassium doped CuPc: Electronic and atomic structure formation     p. 121
    O.V. Molodtsova, V.Yu. Aristov, V.M. Zhilin, D.V. Vyalikh and M. Knupfer
    Abstract | PDF file (291 KB)


  • Thermal diffusion of indium in perylenetetracarboxylic dianhydride     p. 127
    R. Hudej and G. Bratina
    Abstract | PDF file (3.30 MB)


  • Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface properties     p. 133
    A. Pongrácz, G. Battistig, A.L. Tóth, Zs. Makkai, Cs. Dücso, K.V. Josepovits and I. Bársony
    Abstract | PDF file (198 KB)


  • Characteristics of metal-silicon carbide tunnel contact     p. 137
    V.M. Aroutiounian, V.V. Buniatyan, P.G. Soukiassian and Vaz. V. Buniatyan
    Abstract | PDF file (112 KB)


  • Formation of nanoclusters containing In and Sb atoms     p. 141
    M. Saito, H. Sasaki, T. Sasaki, M. Mori, T. Tambo and C. Tatsuyama
    Abstract | PDF file (254 KB)


  • Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS     p. 147
    B. Künstler-Hourriez, B. Erné, F. Lefévre, D. Lorans, B. Canava, M. Herlem and A. Etcheberry
    Abstract | PDF file (160 KB)


  • Magnetic and structural properties of Mn/InSb(001)     p. 153
    M. Zerrouki, P. De Padova, C. Quaresima, P. Perfetti, M.C. Richter, O. Heckmann and K. Hricovini
    Abstract | PDF file (266 KB)


  • Orientation and interface effects on the structural and magnetic properties of MnAs-on-GaAs hybrid structures     p. 159
    L. Däweritz, D. Kolovos-Vellianitis, A. Trampert, C. Herrmann, K.H. Ploog, E. Bauer, A. Locatelli, S. Cherifi and S. Heun
    Abstract | PDF file (248 KB)


  • Effect of thermal annealing on the optical properties of self-assembled Ge/Si quantum dots     p. 163
    T.K. Nguyen-Duc, V. Le Thanh, J. Derrien, V. Yam, P. Boucaud and D. Bouchier
    Abstract | PDF file (474 KB)


  • IV characteristics in structures prepared by tip induced oxidation     p. 171
    V. Cambel, J. Soltýs, J. Martaus and M. Mosko
    Abstract | PDF file (141 KB)


  • Observation of growth during the MOVPE of III-nitrides     p. 177
    H. Hardtdegen, N. Kaluza, R. Steins, Y.S. Cho, R. Schmidt, Z. Sofer and J.-T. Zettler
    Abstract | PDF file (571 KB)


  • Photocatalysis over titania on iron oxide     p. 185
    Kwi Cheol Kim and Chong Soo Han
    Abstract | PDF file (219 KB)


  • Structural investigation of organosilane self-assembled monolayers by atomic scale simulation     p. 189
    H. Yamamoto, T. Watanabe, K. Nishiyama, K. Tatsumura and I. Ohdomari
    Abstract | PDF file (619 KB)


  • Alkylation of Silicon(111) surfaces     p. 195
    S. Rivillon and Y.J. Chabal
    Abstract | PDF file (118 KB)


  • Metal induced gap states at tetratetracontane/Cu interface     p. 199
    M. Kiguchi, G. Yoshikawa, K. Saiki, R. Arita and H. Aoki
    Abstract | PDF file (325 KB)


  • Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems     p. 205
    C. Pelosi, M. Bosi, G. Attolini and T. Prutskij
    Abstract | PDF file (141 KB)


  • Raman characterization of the In0.14Ga0.86As0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy     p. 211
    J. Díaz-Reyes, E. López-Cruz, J.G. Mendoza-Álvarez and S. Jiménez-Sandoval
    Abstract | PDF file (143 KB)


  • Pulsed electron beam annealing: A tool for post-implantation damage control in SiC     p. 215
    D.J. Brink, H.W. Kunert, J.B. Malherbe and J. Camassel
    Abstract | PDF file (143 KB)


  • Formation of planar defects during the initial growth of M-plane GaN on LiAlO2(100)     p. 221
    A. Trampert, T.Y. Liu, O. Brandt and K.H. Ploog
    Abstract | PDF file (1.24 MB)


  • Interface formation and structural properties of iron films on Al0.48 In0.52As(001)     p. 225
    P. Schieffer, N. Tournerie, B. Lépine, C. Lallaizon, A. Guivarc'h and G. Jézéquel
    Abstract | PDF file (158 KB)


  • Structural and magnetic properties of Ge $_{1-{\rm x}}$Mn$_{\rm x}$/Ge(001) 2 $\times$ 1 diluted magnetic semiconductors     p. 231
    P. De Padova, C. Quaresima, P. Perfetti, N. Zema, C. Grazioli, M. Veronese, B. Olivieri, M.C. Richter, O. Heckmann, F. D'Orazio, F. Lucari and K. Hricovini
    Abstract | PDF file (351 KB)


  • Nano-domains segmentation on AFM images     p. 237
    X. Luciani, L. Patrone and P. Courmontagne
    Abstract | PDF file (609 KB)


  • He scattering study of Au(111) nanostructured by ion sputtering     p. 243
    D. Cavanna and G. Bracco
    Abstract | PDF file (99.4 KB)


  • Precisely controlled anodic etching for processing of GaAs-based quantum nanostructures and devices     p. 249
    N. Shiozaki, T. Sato, M. Akazawa and H. Hasegawa
    Abstract | PDF file (211 KB)


  • AES measurements of Sb mass transport in amorphous Si thin films     p. 255
    J. Nyéki, C. Girardeaux, A. Rolland and J. Bernardini
    Abstract | PDF file (78.9 KB)


  • Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface: Soft X-ray absorption and emission study     p. 259
    Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, Y. Takata and S. Shin
    Abstract | PDF file (87.9 KB)


  • Wet chemical nitridation of GaAs(001) surface     p. 263
    V.L. Berkovits, A.N. Karpenko, L. Masson and V.P. Ulin
    Abstract | PDF file (372 KB)


  • Growth of aluminum oxide thin films on Cobalt: An AES and AFM study     p. 269
    H. Oughaddou, S. Vizzini, B. Aufray, B. Ealet, J.P. Bibérian, L. Ravel, J.-M. Gay and F.A. d'Avitaya
    Abstract | PDF file (381 KB)


  • Thermal stability of Gd2O3/Si(100) interfacial transition layer     p. 273
    H. Nohira, T. Yoshida, H. Okamoto, S. Shinagawa, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Ng Jin Aun, Y. Kobayashi, S. Ohmi, H. Iwai, E. Ikenaga, Y. Takata, K. Kobayashi and T. Hattori
    Abstract | PDF file (802 KB)


  • Preparation and characterization of HfO2 thin films by photo-assisted MOCVD     p. 279
    T. Kanashima, T. Tada and M. Okuyama
    Abstract | PDF file (496 KB)


  • Formation of epitaxial strontium oxide and silicate on silicon (001)     p. 285
    G. Delhaye, M. El Kazzi, S. Gaillard, M. Gendry and G. Hollinger
    Abstract | PDF file (509 KB)


  • Physical property analysis of C-doped GaAs as function of the carrier concentration grown by MOCVD using elemental arsenic as precursor     p. 291
    J. Díaz-Reyes, M.A. Avendaño, M. Galván-Arellano and R. Peña-Sierra
    Abstract | PDF file (119 KB)


  • Polarized photoluminescence of the of GaInP2 layers grown on GaAs and Ge substrates by MOVPE technique     p. 295
    T. Prutskij, C. Pelosi and R. Brito-Orta
    Abstract | PDF file (706 KB)


  • Growth of long range ordered pentacene/benzenethiol/Cu(100) heterostructure     p. 301
    A. Kanjilal, F. Bussolotti, F. Crispoldi, M. Beccari, V. Di Castro, M. Grazia Betti and C. Mariani
    Abstract | PDF file (354 KB)


  • Vibration modes and interface abruptness of CdSe quantum dots, embedded either in BeTe or ZnSe     p. 307
    J. Geurts, U. Bass, S. Mahapatra, K. Brunner, T. Muck and V. Wagner
    Abstract | PDF file (99.9 KB)


  • Ordered silicon structures on silver (100) at 230°C     p. 311
    C. Leandri, B. Aufray, G. Le Lay, C. Girardeaux, C. Ottaviani and A. Cricenti
    Abstract | PDF file (141 KB)


  • The properties of GaInP/GaAs heterostructures as a function of growth temperature     p. 315
    C. Pelosi, G. Attolini, M. Bosi, E. Martín, O. Martinez, L.F. Sanz, J. Jiménez and T. Prutskij
    Abstract | PDF file (92.8 KB)


  • Effect of ageing on the statical and time-resolved photoluminescence spectra of porous silicon     p. 321
    Bui Huy, Pham Van Hoi, Phi Hoa Binh, Tran Thi Kim Chi, Le Quang Huy and Nguyen Quang Liem
    Abstract | PDF file (68.8 KB)


  • Reflectance calculation of a diamond-like carbon/porous Si thin films in silicon-based photovoltaic cells     p. 325
    Kh.S. Martirosyan, V.M. Aroutiounian and P. Soukiassian
    Abstract | PDF file (65.7 KB)


  • Raman active modes of one-, two-, and three-phonon processes in the most important compounds and semiconductors with the rhombic, tetragonal, regular, trigonal, and hexagonal structures     p. 329
    H.W. Kunert, J. Barnas, D.J. Brink and J. Malherbe
    Abstract | PDF file (166 KB)


  • Density of occupied and unoccupied states monitored during metal deposition onto phthalocyanine layers     p. 337
    M. Gorgoi and D.R.T. Zahn
    Abstract | PDF file (2.00 MB)


  • Efficiency improvement of white organic light emitting diodes with a mixed electron transporting layer     p. 341
    Uerng-Yih Ueng, Ching-Huei Tseng and Meiso Yokoyama
    Abstract | PDF file (193 KB)


  • Using [Naphthyl-substituted benzidine derivative] (NPB): Tris-(8-hydroxyquinoline)-aluminum(III) (Alq3) mixed Layer to improve the efficiency of organic light emitting diodes     p. 345
    Ching-Huei Tseng, Uerng-Yih Ueng and Meiso Yokoyama
    Abstract | PDF file (168 KB)


  • The exciplex emission of organic light emitting diodes with 5, 6, 11, 12-tetraphenylnaphthacene (Rubrene)-doped hole transport layer     p. 351
    Ching-Huei Tseng, Uerng-Yih Ueng and Meiso Yokoyama
    Abstract | PDF file (92.9 KB)


  • Microwave characteristics of hetero-junction impatt diodes based on SiC     p. 355
    V.V. Buniatyan, V.M. Aroutiounian, P.G. Soukiassian, K. Zekentes and Vaz. V. Buniatyan
    Abstract | PDF file (83.6 KB)


  • Bilayer electrode composition of TiO2 film for dye-sensitized solar cell     p. 359
    M. Murayama, E. Yamazaki, N. Hashimoto and T. Mori
    Abstract | PDF file (311 KB)


  • Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates     p. 365
    Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart and J.-P. Faurie
    Abstract | PDF file (118 KB)







© EDP Sciences 2006