| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 355 - 357 | |
| DOI | https://doi.org/10.1051/jp4:2006132068 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 355-357
DOI: 10.1051/jp4:2006132068
1 State Engineering University of Armenia, 105 Teryan Str., 375009 Yerevan, Armenia
2 Yerevan State University, Al. Manoukian Str. 1, 375049 Yerevan, Armenia
3 Université de Paris-Sud/Orsay, Commissariat à l'Énergie Atomique, Saclay, DSM-DRECAM-SPCSI-SIMA, Bât. 462, 91191 Gif-sur-Yvette Cedex, France
4 MRG, Institute of Electronic Structure & Lasers, FORTH, 71110 Heraklion Greece
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 355-357
DOI: 10.1051/jp4:2006132068
Microwave characteristics of hetero-junction impatt diodes based on SiC
V.V. Buniatyan1, V.M. Aroutiounian2, P.G. Soukiassian3, K. Zekentes4 and Vaz. V. Buniatyan11 State Engineering University of Armenia, 105 Teryan Str., 375009 Yerevan, Armenia
2 Yerevan State University, Al. Manoukian Str. 1, 375049 Yerevan, Armenia
3 Université de Paris-Sud/Orsay, Commissariat à l'Énergie Atomique, Saclay, DSM-DRECAM-SPCSI-SIMA, Bât. 462, 91191 Gif-sur-Yvette Cedex, France
4 MRG, Institute of Electronic Structure & Lasers, FORTH, 71110 Heraklion Greece
Abstract
Microwave impedance characteristics of the double velocity IMPATT
diode structure made of Si/SiC heterostructures are examined.
© EDP Sciences 2006