Journal de Physique IV

Accès gratuit

Foreword

Preface p. III

C. Girardeaux, B. Aufray, J. Bernardini, H. Dallaporta, G. Le Lay et P. Soukiassian

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132001

Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 2–c(8 2) p. 1

P. De Padova, C. Quaresima, P. Perfetti, B. Olivieri, M.C. Richter, O. Heckmann, M. Zerrouki, G. Pennesi, A.M. Paoletti, G. Rossi et K. Hricovini

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132002

Study of electric conductance of atomic or molecular wire in terms of the phase-shift p. 7

Y. Otsuka, N. Shima et K. Makoshi

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132003

Soft X-ray photoelectron spectroscopy of metal-phthalocyanines on the (001) surface of GaAs and Ge p. 11

G. Cabailh, B.N. Holland, C. Stephens, I.T. McGovern, C. McGuinness, A. Cafolla, A.R. Vearey-Roberts et D.A. Evans

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132004

Surface energy minimization struggle between Ge and Si on 4H-SiC(0001)-(3 3) p. 17

D. Dentel, K. Aït-Mansour, M. Derivaz, L. Kubler, M. Diani, D. Bolmont et J.L. Bischoff

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132005

Synchrotron light in semiconductor research: Three decades of revolution p. 23

G. Margaritondo

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132006

UHV-STM study of single-walled carbon nanotubes applied to the GaAs(110) and InAs(110) surfaces p. 31

L.B. Ruppalt, P.M. Albrecht et J.W. Lyding

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132007

Structural and photoemission studies of SrF₂ adsorption on Si(001) p. 35

L. Pasquali, S.M. Suturin, A. Balanev, A.K. Kaveev, N.S. Sokolov, B.P. Doyle, F. Borgatti, A. Giglia, N. Mahne, M. Pedio et S. Nannarone

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132008

Electrical barriers at semiconductor interfaces: Some reflections and future challenges p. 41

R.H. Williams, K.S. Teng et S.P. Wilks

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132009

The (3 2) -SiC(001) surface reconstruction investigated by photoelectron diffraction in the backscattering regime p. 49

E.G. Michel, D. Dunham, A. Tejeda, P. Soukiassian, E. Rotenberg et J.D. Denlinger

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132010

Electrical conduction through a monatomic surface step p. 57

I. Matsuda, T. Hirahara, M. Ueno, R. Hobara et S. Hasegawa

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132011

Electronic properties of metal/MgO(001) interfaces p. 63

Y. Lu, C.K. Assi, J.C. Le Breton, P. Turban, B. Lépine, P. Schieffer et G. Jézéquel

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132012

In situ reflectance anisotropy spectroscopy monitoring of wide bandgap biomolecules on vicinal silicon surfaces p. 69

S.D. Silaghi, M. Friedrich et D.R.T. Zahn

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132013

Optical properties of the interfaces in organic/organic multilayered heterostructures p. 73

O.D. Gordan, S. Hermann, M. Friedrich et D.R.T. Zahn

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132014

Near monolayer deposition of palladium phthalocyanine and perylene tetracarboxylic diimide on Au(001): A STM study p. 77

O. Guillermet, A. Glachant, M. Mossoyan et J.C. Mossoyan

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132015

Valence charges for ultrathin SiO₂ films formed on Si(100) p. 83

K. Hirose, M. Kihara, H. Okamoto, H. Nohira, E. Ikenaga, Y. Takata, K. Kobayashi et T. Hattori

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132016

Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy p. 87

M. El Kazzi, G. Delhaye, S. Gaillard, E. Bergignat et G. Hollinger

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132017

Surface structure and energy bands of 1/3 ML Sn/Ge(111) p. 91

P. Gori, O. Pulci et A. Cricenti

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132018

X-ray photoelectron spectroscopy study of silicon interlayer based surface passivation for AlGaAs/GaAs quantum structures on (111) B surfaces p. 95

M. Akazawa, N. Shiozaki et H. Hasegawa

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132019

Characterisation of metal-organic semiconductor interfaces: In and Sn on CuPc p. 101

V.Yu. Aristov, O.V. Molodtsova, V.M. Zhilin, D.V. Vyalikh et M. Knupfer

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132020

Electronic properties of intrinsic and heavily doped AlN and GaN p. 105

A. Ferreira da Silva et C. Persson

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132021

Electron emission from nano-structured carbon composite materials — an important role of the interface for enhancing the emission p. 111

H. Hiraki, N. Jiang, H.X. Wang et A. Hiraki

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132022

In situ formation of a new Al-Pd-Mn-Si quasicrystalline phase on the pentagonal surface of the Al-Pd-Mn quasicrystal p. 117

J.-N. Longchamp, M. Erbudak et Y. Weisskopf

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132023

Potassium doped CuPc: Electronic and atomic structure formation p. 121

O.V. Molodtsova, V.Yu. Aristov, V.M. Zhilin, D.V. Vyalikh et M. Knupfer

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132024

Thermal diffusion of indium in perylenetetracarboxylic dianhydride p. 127

R. Hudej et G. Bratina

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132025

Nucleation of SiC nanocrystals at the Si/SiO₂ interface: Effect of the interface properties p. 133

A. Pongrácz, G. Battistig, A.L. Tóth, Zs. Makkai, Cs. Dücső, K.V. Josepovits et I. Bársony

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132026

Characteristics of metal-silicon carbide tunnel contact p. 137

V.M. Aroutiounian, V.V. Buniatyan, P.G. Soukiassian et Vaz. V. Buniatyan

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132027

Formation of nanoclusters containing In and Sb atoms p. 141

M. Saito, H. Sasaki, T. Sasaki, M. Mori, T. Tambo et C. Tatsuyama

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132028

Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS p. 147

B. Künstler-Hourriez, B. Erné, F. Lefévre, D. Lorans, B. Canava, M. Herlem et A. Etcheberry

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132029

Magnetic and structural properties of Mn/InSb(001) p. 153

M. Zerrouki, P. De Padova, C. Quaresima, P. Perfetti, M.C. Richter, O. Heckmann et K. Hricovini

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132030

Orientation and interface effects on the structural and magnetic properties of MnAs-on-GaAs hybrid structures p. 159

L. Däweritz, D. Kolovos-Vellianitis, A. Trampert, C. Herrmann, K.H. Ploog, E. Bauer, A. Locatelli, S. Cherifi et S. Heun

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132031

Effect of thermal annealing on the optical properties of self-assembled Ge/Si quantum dots p. 163

T.K. Nguyen-Duc, V. Le Thanh, J. Derrien, V. Yam, P. Boucaud et D. Bouchier

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132032

IV characteristics in structures prepared by tip induced oxidation p. 171

V. Cambel, J. Šoltýs, J. Martaus et M. Moško

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132033

Observation of growth during the MOVPE of III-nitrides p. 177

H. Hardtdegen, N. Kaluza, R. Steins, Y.S. Cho, R. Schmidt, Z. Sofer et J.-T. Zettler

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132034

Photocatalysis over titania on iron oxide p. 185

Kwi Cheol Kim et Chong Soo Han

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132035

Structural investigation of organosilane self-assembled monolayers by atomic scale simulation p. 189

H. Yamamoto, T. Watanabe, K. Nishiyama, K. Tatsumura et I. Ohdomari

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132036

Alkylation of Silicon(111) surfaces p. 195

S. Rivillon et Y.J. Chabal

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132037

Metal induced gap states at tetratetracontane/Cu interface p. 199

M. Kiguchi, G. Yoshikawa, K. Saiki, R. Arita et H. Aoki

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132038

Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems p. 205

C. Pelosi, M. Bosi, G. Attolini et T. Prutskij

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132039

Raman characterization of the In_0.14Ga_0.86As_0.13Sb_0.87 highly doped with Te grown on GaSb by liquid phase epitaxy p. 211

J. Díaz-Reyes, E. López-Cruz, J.G. Mendoza-Álvarez et S. Jiménez-Sandoval

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132040

Pulsed electron beam annealing: A tool for post-implantation damage control in SiC p. 215

D.J. Brink, H.W. Kunert, J.B. Malherbe et J. Camassel

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132041

Formation of planar defects during the initial growth of M-plane GaN on LiAlO₂(100) p. 221

A. Trampert, T.Y. Liu, O. Brandt et K.H. Ploog

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132042

Interface formation and structural properties of iron films on Al_0.48 In_0.52As(001) p. 225

P. Schieffer, N. Tournerie, B. Lépine, C. Lallaizon, A. Guivarc'h et G. Jézéquel

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132043

Structural and magnetic properties of Ge Mn/Ge(001) 2 1 diluted magnetic semiconductors p. 231

P. De Padova, C. Quaresima, P. Perfetti, N. Zema, C. Grazioli, M. Veronese, B. Olivieri, M.C. Richter, O. Heckmann, F. D'Orazio et al. (2 de plus)

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132044

Nano-domains segmentation on AFM images p. 237

X. Luciani, L. Patrone et P. Courmontagne

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132045

He scattering study of Au(111) nanostructured by ion sputtering p. 243

D. Cavanna et G. Bracco

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132046

Precisely controlled anodic etching for processing of GaAs-based quantum nanostructures and devices p. 249

N. Shiozaki, T. Sato, M. Akazawa et H. Hasegawa

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132047

AES measurements of Sb mass transport in amorphous Si thin films p. 255

J. Nyéki, C. Girardeaux, A. Rolland et J. Bernardini

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132048

Effects of interface roughness on the local valence electronic structure at the SiO₂/Si interface: Soft X-ray absorption and emission study p. 259

Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, Y. Takata et S. Shin

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132049

Wet chemical nitridation of GaAs(001) surface p. 263

V.L. Berkovits, A.N. Karpenko, L. Masson et V.P. Ulin

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132050

Growth of aluminum oxide thin films on Cobalt: An AES and AFM study p. 269

H. Oughaddou, S. Vizzini, B. Aufray, B. Ealet, J.P. Bibérian, L. Ravel, J.-M. Gay et F.A. d'Avitaya

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132051

Thermal stability of Gd₂O₃/Si(100) interfacial transition layer p. 273

H. Nohira, T. Yoshida, H. Okamoto, S. Shinagawa, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, Ng Jin Aun, Y. Kobayashi et al. (6 de plus)

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132052

Preparation and characterization of HfO₂ thin films by photo-assisted MOCVD p. 279

T. Kanashima, T. Tada et M. Okuyama

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132053

Formation of epitaxial strontium oxide and silicate on silicon (001) p. 285

G. Delhaye, M. El Kazzi, S. Gaillard, M. Gendry et G. Hollinger

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132054

Physical property analysis of C-doped GaAs as function of the carrier concentration grown by MOCVD using elemental arsenic as precursor p. 291

J. Díaz-Reyes, M.A. Avendaño, M. Galván-Arellano et R. Peña-Sierra

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132055

Polarized photoluminescence of the of GaInP₂ layers grown on GaAs and Ge substrates by MOVPE technique p. 295

T. Prutskij, C. Pelosi et R. Brito-Orta

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132056

Growth of long range ordered pentacene/benzenethiol/Cu(100) heterostructure p. 301

A. Kanjilal, F. Bussolotti, F. Crispoldi, M. Beccari, V. Di Castro, M. Grazia Betti et C. Mariani

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132057

Vibration modes and interface abruptness of CdSe quantum dots, embedded either in BeTe or ZnSe p. 307

J. Geurts, U. Bass, S. Mahapatra, K. Brunner, T. Muck et V. Wagner

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132058

Ordered silicon structures on silver (100) at 230°C p. 311

C. Leandri, B. Aufray, G. Le Lay, C. Girardeaux, C. Ottaviani et A. Cricenti

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132059

The properties of GaInP/GaAs heterostructures as a function of growth temperature p. 315

C. Pelosi, G. Attolini, M. Bosi, E. Martín, O. Martinez, L.F. Sanz, J. Jiménez et T. Prutskij

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132060

Effect of ageing on the statical and time-resolved photoluminescence spectra of porous silicon p. 321

Bui Huy, Pham Van Hoi, Phi Hoa Binh, Tran Thi Kim Chi, Le Quang Huy et Nguyen Quang Liem

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132061

Reflectance calculation of a diamond-like carbon/porous Si thin films in silicon-based photovoltaic cells p. 325

Kh.S. Martirosyan, V.M. Aroutiounian et P. Soukiassian

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132062

Raman active modes of one–, two–, and three–phonon processes in the most important compounds and semiconductors with the rhombic, tetragonal, regular, trigonal, and hexagonal structures p. 329

H.W. Kunert, J. Barnas, D.J. Brink et J. Malherbe

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132063

Density of occupied and unoccupied states monitored during metal deposition onto phthalocyanine layers p. 337

M. Gorgoi et D.R.T. Zahn

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132064

Efficiency improvement of white organic light emitting diodes with a mixed electron transporting layer p. 341

Uerng-Yih Ueng, Ching-Huei Tseng et Meiso Yokoyama

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132065

Using [Naphthyl-substituted benzidine derivative] (NPB): Tris-(8-hydroxyquinoline)-aluminum(III) (Alq₃) mixed Layer to improve the efficiency of organic light emitting diodes p. 345

Ching-Huei Tseng, Uerng-Yih Ueng et Meiso Yokoyama

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132066

The exciplex emission of organic light emitting diodes with 5, 6, 11, 12-tetraphenylnaphthacene (Rubrene)-doped hole transport layer p. 351

Ching-Huei Tseng, Uerng-Yih Ueng et Meiso Yokoyama

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132067

Microwave characteristics of hetero-junction impatt diodes based on SiC p. 355

V.V. Buniatyan, V.M. Aroutiounian, P.G. Soukiassian, K. Zekentes et Vaz. V. Buniatyan

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132068

Bilayer electrode composition of TiO₂ film for dye-sensitized solar cell p. 359

M. Murayama, E. Yamazaki, N. Hashimoto et T. Mori

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132069

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates p. 365

Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart et J.-P. Faurie

Publié en ligne : 11 mars 2006

DOI: https://doi.org/10.1051/jp4:2006132070

Journal de Physique IV (Proceedings)

Volume 132 (March 2006)

Preface p. III

Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 2–c(8 2) p. 1

Study of electric conductance of atomic or molecular wire in terms of the phase-shift p. 7

Soft X-ray photoelectron spectroscopy of metal-phthalocyanines on the (001) surface of GaAs and Ge p. 11

Surface energy minimization struggle between Ge and Si on 4H-SiC(0001)-(3 3) p. 17

Synchrotron light in semiconductor research: Three decades of revolution p. 23

UHV-STM study of single-walled carbon nanotubes applied to the GaAs(110) and InAs(110) surfaces p. 31

Structural and photoemission studies of SrF2 adsorption on Si(001) p. 35

Electrical barriers at semiconductor interfaces: Some reflections and future challenges p. 41

The (3 2) -SiC(001) surface reconstruction investigated by photoelectron diffraction in the backscattering regime p. 49

Electrical conduction through a monatomic surface step p. 57

Electronic properties of metal/MgO(001) interfaces p. 63

In situ reflectance anisotropy spectroscopy monitoring of wide bandgap biomolecules on vicinal silicon surfaces p. 69

Optical properties of the interfaces in organic/organic multilayered heterostructures p. 73

Near monolayer deposition of palladium phthalocyanine and perylene tetracarboxylic diimide on Au(001): A STM study p. 77

Valence charges for ultrathin SiO2 films formed on Si(100) p. 83

Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy p. 87

Surface structure and energy bands of 1/3 ML Sn/Ge(111) p. 91

X-ray photoelectron spectroscopy study of silicon interlayer based surface passivation for AlGaAs/GaAs quantum structures on (111) B surfaces p. 95

Characterisation of metal-organic semiconductor interfaces: In and Sn on CuPc p. 101

Electronic properties of intrinsic and heavily doped AlN and GaN p. 105

Electron emission from nano-structured carbon composite materials — an important role of the interface for enhancing the emission p. 111

In situ formation of a new Al-Pd-Mn-Si quasicrystalline phase on the pentagonal surface of the Al-Pd-Mn quasicrystal p. 117

Potassium doped CuPc: Electronic and atomic structure formation p. 121

Thermal diffusion of indium in perylenetetracarboxylic dianhydride p. 127

Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface properties p. 133

Characteristics of metal-silicon carbide tunnel contact p. 137

Formation of nanoclusters containing In and Sb atoms p. 141

Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS p. 147

Magnetic and structural properties of Mn/InSb(001) p. 153

Orientation and interface effects on the structural and magnetic properties of MnAs-on-GaAs hybrid structures p. 159

Effect of thermal annealing on the optical properties of self-assembled Ge/Si quantum dots p. 163

IV characteristics in structures prepared by tip induced oxidation p. 171

Observation of growth during the MOVPE of III-nitrides p. 177

Photocatalysis over titania on iron oxide p. 185

Structural investigation of organosilane self-assembled monolayers by atomic scale simulation p. 189

Alkylation of Silicon(111) surfaces p. 195

Metal induced gap states at tetratetracontane/Cu interface p. 199

Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems p. 205

Raman characterization of the In0.14Ga0.86As0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy p. 211

Pulsed electron beam annealing: A tool for post-implantation damage control in SiC p. 215

Formation of planar defects during the initial growth of M-plane GaN on LiAlO2(100) p. 221

Interface formation and structural properties of iron films on Al0.48 In0.52As(001) p. 225

Structural and magnetic properties of Ge Mn/Ge(001) 2 1 diluted magnetic semiconductors p. 231

Nano-domains segmentation on AFM images p. 237

He scattering study of Au(111) nanostructured by ion sputtering p. 243

Precisely controlled anodic etching for processing of GaAs-based quantum nanostructures and devices p. 249

AES measurements of Sb mass transport in amorphous Si thin films p. 255

Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface: Soft X-ray absorption and emission study p. 259

Wet chemical nitridation of GaAs(001) surface p. 263

Growth of aluminum oxide thin films on Cobalt: An AES and AFM study p. 269

Thermal stability of Gd2O3/Si(100) interfacial transition layer p. 273

Preparation and characterization of HfO2 thin films by photo-assisted MOCVD p. 279

Formation of epitaxial strontium oxide and silicate on silicon (001) p. 285

Physical property analysis of C-doped GaAs as function of the carrier concentration grown by MOCVD using elemental arsenic as precursor p. 291

Polarized photoluminescence of the of GaInP2 layers grown on GaAs and Ge substrates by MOVPE technique p. 295

Growth of long range ordered pentacene/benzenethiol/Cu(100) heterostructure p. 301

Vibration modes and interface abruptness of CdSe quantum dots, embedded either in BeTe or ZnSe p. 307

Ordered silicon structures on silver (100) at 230°C p. 311

The properties of GaInP/GaAs heterostructures as a function of growth temperature p. 315

Effect of ageing on the statical and time-resolved photoluminescence spectra of porous silicon p. 321

Reflectance calculation of a diamond-like carbon/porous Si thin films in silicon-based photovoltaic cells p. 325

Raman active modes of one–, two–, and three–phonon processes in the most important compounds and semiconductors with the rhombic, tetragonal, regular, trigonal, and hexagonal structures p. 329

Density of occupied and unoccupied states monitored during metal deposition onto phthalocyanine layers p. 337

Efficiency improvement of white organic light emitting diodes with a mixed electron transporting layer p. 341

Using [Naphthyl-substituted benzidine derivative] (NPB): Tris-(8-hydroxyquinoline)-aluminum(III) (Alq3) mixed Layer to improve the efficiency of organic light emitting diodes p. 345

The exciplex emission of organic light emitting diodes with 5, 6, 11, 12-tetraphenylnaphthacene (Rubrene)-doped hole transport layer p. 351

Microwave characteristics of hetero-junction impatt diodes based on SiC p. 355

Bilayer electrode composition of TiO2 film for dye-sensitized solar cell p. 359

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates p. 365

Structural and photoemission studies of SrF₂ adsorption on Si(001) p. 35

Valence charges for ultrathin SiO₂ films formed on Si(100) p. 83

Nucleation of SiC nanocrystals at the Si/SiO₂ interface: Effect of the interface properties p. 133

Raman characterization of the In_0.14Ga_0.86As_0.13Sb_0.87 highly doped with Te grown on GaSb by liquid phase epitaxy p. 211

Formation of planar defects during the initial growth of M-plane GaN on LiAlO₂(100) p. 221

Interface formation and structural properties of iron films on Al_0.48 In_0.52As(001) p. 225

Effects of interface roughness on the local valence electronic structure at the SiO₂/Si interface: Soft X-ray absorption and emission study p. 259

Thermal stability of Gd₂O₃/Si(100) interfacial transition layer p. 273

Preparation and characterization of HfO₂ thin films by photo-assisted MOCVD p. 279

Polarized photoluminescence of the of GaInP₂ layers grown on GaAs and Ge substrates by MOVPE technique p. 295

Using [Naphthyl-substituted benzidine derivative] (NPB): Tris-(8-hydroxyquinoline)-aluminum(III) (Alq₃) mixed Layer to improve the efficiency of organic light emitting diodes p. 345

Bilayer electrode composition of TiO₂ film for dye-sensitized solar cell p. 359