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Numéro
J. Phys. IV France
Volume 132, March 2006
Page(s) 31 - 34
DOI https://doi.org/10.1051/jp4:2006132007
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 31-34
DOI: 10.1051/jp4:2006132007

UHV-STM study of single-walled carbon nanotubes applied to the GaAs(110) and InAs(110) surfaces

L.B. Ruppalt, P.M. Albrecht and J.W. Lyding

Department of Electrical and Computer Engineering and Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana Champaign, Illinois, USA


Abstract
In this study, ultrahigh vacuum (UHV) cross-sectional scanning tunneling microscopy (STM) and spectroscopy (STS) were used to probe the physical and electrical properties of individual single-walled carbon nanotubes (SWNTs) deposited onto semiconducting GaAs and InAs platforms. Isolated nanotubes were applied to the III-V(110) surface in situ via an UHV-compatible dry contact transfer (DCT) process. Subsequent STM observations indicate a substrate-dependent SWNT orientation, with individual nanotubes exhibiting a tendency to align in the $<\overline 1 10>$ direction, parallel to surface sublattice rows, while STS measurements confirm the Type I and Type II energy band alignments of the GaAs/SWNT and InAs/SWNT systems, respectively. Additionally, the electronic character of a naturally occurring intramolecular semiconducting/metallic SWNT junction is profiled.



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