10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 273-277
DOI: 10.1051/jp4:2006132052

Thermal stability of Gd₂O₃/Si(100) interfacial transition layer

H. Nohira¹, T. Yoshida¹, H. Okamoto¹, S. Shinagawa¹, W. Sakai², K. Nakajima², M. Suzuki², K. Kimura², Ng Jin Aun³, Y. Kobayashi³, S. Ohmi³, H. Iwai³, E. Ikenaga⁴, Y. Takata⁵, K. Kobayashi⁴ and T. Hattori<sup>1

1</sup>  Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan
²  Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
³  Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
⁴  JASRI/SPring-8, Kouto 1-1-1, Mikaduki-cho, Sayo-gun, Hyogo 679-5198, Japan
⁵  RIKEN/SPring-8, Kouto 1-1-1, Mikaduki-cho, Sayo-gun, Hyogo 679-5148, Japan

Abstract
Thermal stability of Gd₂O₃/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd₂O₃/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd₂O₃/Si(100) interface without annealing and the amount of Gd-silicate increased by PDA above 400C.

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