J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 107 - 110

J. Phys. IV France
12 (2002) Pr3-107
DOI: 10.1051/jp420020046

Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime

X. Jehl1, M. Sanquer1, G. Bertrand2, G. Guégan2 and S. Deleonibus11

1  CEA Grenoble, DSM/DRFMC/SPSMS/LCP, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
2  CEA Grenoble, DTA/LETI, 17 rue des Martyrs, 38054 Grenoble cedex 9, France

We study electronic transport and current noise in 50 nm gate length PMOSFETs at very low temperature ( T<1K). In the linear regime the drain source current versus gate voltage below the threshold voltage exhibits reproducible sharp resonances due to coherent transport through the discorded channel. We present first experiment Showing the time dependence of these resonances particulary the amout of random telegraph and 1/f noise which affect the resonance pattern. Implications for sensitive electrometry are discussed.

© EDP Sciences 2002