| Numéro |
J. Phys. IV France
Volume 12, Numéro 3, May 2002
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|
|---|---|---|
| Page(s) | 107 - 110 | |
| DOI | https://doi.org/10.1051/jp420020046 | |
J. Phys. IV France 12 (2002) Pr3-107
DOI: 10.1051/jp420020046
Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime
X. Jehl1, M. Sanquer1, G. Bertrand2, G. Guégan2 and S. Deleonibus111 CEA Grenoble, DSM/DRFMC/SPSMS/LCP, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
2 CEA Grenoble, DTA/LETI, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
Abstract
We study electronic transport and current noise in 50 nm gate length PMOSFETs at very low temperature (
T<1K). In the linear regime the drain source current versus gate voltage below the threshold voltage exhibits reproducible sharp
resonances due to coherent transport through the discorded channel. We present first experiment Showing the time dependence
of these resonances particulary the amout of random telegraph and 1/f noise which affect the resonance pattern. Implications
for sensitive electrometry are discussed.
© EDP Sciences 2002