| Numéro |
J. Phys. IV France
Volume 12, Numéro 3, May 2002
|
|
|---|---|---|
| Page(s) | 57 - 60 | |
| DOI | https://doi.org/10.1051/jp420020036 | |
J. Phys. IV France 12 (2002) Pr3-57
DOI: 10.1051/jp420020036
Low temperature operation of ultra-thin gate oxide sub-0.1
m MOSFETs
B. Cretu1, F. Balestra1, G. Ghibaudo1 and G. Guégan2
1 IMEP/LPCS, ENSERG, BP. 257, 38016 Grenoble, France
2 CEA-LETI, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
Abstract
The aim of this paper is to study the electrical properties of advanced nMOSFETs realized with ultra-thin gate oxide in various
temperature ranges. The driving and leakage currents, carrier velocity and short channel effects are studied. Hot carrier
degradation at low temperature is also addressed in order to evaluate the device lifetimes and the maximum drain biases that
can be applied.
© EDP Sciences 2002