J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 103 - 106

J. Phys. IV France
12 (2002) Pr3-103
DOI: 10.1051/jp420020045

Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO2 films

K. Komiya, Y. Omura, T. Oka and M. Nagahara

High-Technology Research Center, Department of Electronics, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

The experimentally determined conduction mechanisms of gate leakage current are examined for two different soft-breakdown events: analog-soft-breakdown and digital-soft-breakdown. It is strongly suggested that neither variable-range-hopping conduction nor space-charge-limited conduction, by themselves, form the major part of possible conduction mechanisms after analog-soft-breakdown events. On the other hand, it is found that the incremental gate current after digital-soft-breakdown events can be expressed in a simple closed form as functions of temperature and gate voltage; the expression indicates that the post-digital-soft-breakdown current is not ruled by a simple or single conduction mechanism.

© EDP Sciences 2002